| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Advanced semiconductor device physics and modeling
|
Prijić, Z.D.
|
|
|
25 |
8 |
p. 768
|
article
|
| 2 |
1994 America on display… American LCDs playing catch-up
|
McDonald, Jo Ann
|
|
|
25 |
8 |
p. xvii-xx
|
article
|
| 3 |
Bistabilities and nonlinearities in laser diodes
|
Henini, Mohamed
|
|
|
25 |
8 |
p. 767-768
|
article
|
| 4 |
Comparison and competition between MCT and QW structure material for use in IR detectors
|
Shen, S.C.
|
|
|
25 |
8 |
p. 713-739
|
article
|
| 5 |
Deposition of III-N thin films by molecular beam epitaxy
|
Davis, Robert F.
|
|
|
25 |
8 |
p. 661-674
|
article
|
| 6 |
Electroluminescence in p-i-n double-barrier resonant tunnelling structures
|
Kuhn, O.
|
|
|
25 |
8 |
p. 741-746
|
article
|
| 7 |
Growth of In x Ga(1−x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes
|
Nakamura, Shuji
|
|
|
25 |
8 |
p. 651-659
|
article
|
| 8 |
Growth of ZnMgSSe and a blue-laser diode
|
Okuyama, Hiroyuki
|
|
|
25 |
8 |
p. 643-649
|
article
|
| 9 |
1994 IEEE international electron devices meeting 11th-14th December
|
|
|
|
25 |
8 |
p. v-viii
|
article
|
| 10 |
III–V semiconductor waveguiding devices using adiabatic tapers
|
Moerman, I.
|
|
|
25 |
8 |
p. 675-690
|
article
|
| 11 |
Large area, production MOCVD rotating disk reactor development and characteristics
|
Tompa, G.S.
|
|
|
25 |
8 |
p. 757-765
|
article
|
| 12 |
Mass production of laser diodes by MBE
|
Mataki, Hiroshi
|
|
|
25 |
8 |
p. 619-630
|
article
|
| 13 |
Metalorganic vapour-phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes
|
Hibbs-Brenner, M.K.
|
|
|
25 |
8 |
p. 747-755
|
article
|
| 14 |
Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators
|
Ramdane, A.
|
|
|
25 |
8 |
p. 691-696
|
article
|
| 15 |
More FPGAs
|
Harris, M.S.
|
|
|
25 |
8 |
p. 767
|
article
|
| 16 |
News update
|
|
|
|
25 |
8 |
p. ix-xvi
|
article
|
| 17 |
Optoelectronic materials and devices
|
Henini, Mohamed
|
|
|
25 |
8 |
p. 607-608
|
article
|
| 18 |
Optoelectronic semiconductor devices
|
Chapman, David
|
|
|
25 |
8 |
p. 769
|
article
|
| 19 |
Quantum confined light modulators
|
Goldys, E.M.
|
|
|
25 |
8 |
p. 697-712
|
article
|
| 20 |
Role of molecular beam epitaxy in the field of optoelectronics
|
Meier, Heinz P.
|
|
|
25 |
8 |
p. 609-617
|
article
|
| 21 |
SI diamond's flat panel display
|
|
|
|
25 |
8 |
p. xxi-xxii
|
article
|
| 22 |
Successful ASIC design the first time through
|
Hurst, S.L.
|
|
|
25 |
8 |
p. 769-770
|
article
|
| 23 |
The development of II–VI semiconductors for blue diode lasers and optoelectronic devices
|
Prior, Kevin A.
|
|
|
25 |
8 |
p. 631-641
|
article
|
| 24 |
Ulta-thin packaging versus the known good die
|
Gurnett, Keith
|
|
|
25 |
8 |
p. xxiii-xxvi
|
article
|
| 25 |
VLSI fabrication principles: Silicon and gallium arsenide
|
Hurst, S.L.
|
|
|
25 |
8 |
p. 770
|
article
|
| 26 |
Who will drive technological advance?
|
Gurnett, Keith
|
|
|
25 |
8 |
p. iii-iv
|
article
|
Journal description