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                             56 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An inexpensive electron beam lithographic system and its application to monolithic circuit fabrication Lyons, B.N.
16 6 p. 20-30
 artikel
2 A novel electroless technique for copper metallization of alumina substrates
16 6 p. 54
 artikel
3 A process-compatible electron beam direct write system
16 6 p. 55
 artikel
4 Boundary conditions for pn heterojunctions
16 6 p. 53
 artikel
5 Carrier mobility determination in short-channel MOS devices Petrova, R.S.
16 6 p. 31-38
 artikel
6 Characterization of silicon by ion beam techniques
16 6 p. 58
 artikel
7 C-MOS 256-K RAM with wideband output stands by on microwatts
16 6 p. 53
 artikel
8 Comparison of microelectronic test structures for propagation delay measurements Radacks, D.J.
16 6 p. 39-46
 artikel
9 Corrosion protection for semiconductor packaging
16 6 p. 56
 artikel
10 DC leakage currents in trichloreothylene oxides
16 6 p. 58
 artikel
11 Designers weigh options for 256-K dynamic-RAM processes
16 6 p. 52
 artikel
12 Designing built-in test for microprocessors
16 6 p. 58
 artikel
13 Design of a 3-micron CMOS cell library
16 6 p. 52
 artikel
14 Diffusion, ion implantation and annealing
16 6 p. 57
 artikel
15 Editorial Butcher, John
16 6 p. 3
 artikel
16 Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures. Part-II experiment
16 6 p. 55
 artikel
17 EL systems: high throughput electron beam lithography tools
16 6 p. 55
 artikel
18 Epitaxial silicon for bipolar integrated circuits
16 6 p. 53
 artikel
19 Evaporated As2S3-reproduction fidelity for microlectronics
16 6 p. 56
 artikel
20 Fault-tolerant design techniques for semiconductor memory applications
16 6 p. 52
 artikel
21 Final state effects of deep impurities in semiconductors
16 6 p. 53
 artikel
22 Focused ion beams in microelectronic fabrication
16 6 p. 55-56
 artikel
23 Forthcoming events
16 6 p. 49-51
 artikel
24 Grain-boundary scattering and surface plasmon attenuation in noble metal films
16 6 p. 54
 artikel
25 Guidelines for publication of high resolution resist parameters
16 6 p. 53
 artikel
26 High performance thick film gold conductors
16 6 p. 54-55
 artikel
27 Integrated circuit design verification tools
16 6 p. 52
 artikel
28 Investigation of fretting corrosion at dissimilar metal interfaces in socketed IC device applications
16 6 p. 57-58
 artikel
29 Ion Beam resists
16 6 p. 56
 artikel
30 Low temperature processes MOSFET's using laser recrystallized polycrystalline silicon films
16 6 p. 55
 artikel
31 Measurement technique of electromigration
16 6 p. 57
 artikel
32 Methods of checking printed circuits
16 6 p. 58
 artikel
33 Monolithic 10-bit d-a converter avoids postprocess trimming
16 6 p. 52
 artikel
34 MOS technology for VLSI
16 6 p. 52
 artikel
35 [No title] Aczel, J.
16 6 p. 47
 artikel
36 [No title] Taylor, D.A.
16 6 p. 47
 artikel
37 Novolac resins used in positive resist systems
16 6 p. 54
 artikel
38 On the injection level dependencs of the minority carrier lifetime in defected silicon substrates
16 6 p. 53-54
 artikel
39 Process and device modelling for VLSI
16 6 p. 56-57
 artikel
40 Profile control in plasma etching of SiO2
16 6 p. 57
 artikel
41 Profile formation in CAIBE
16 6 p. 55
 artikel
42 Properties of nickel oxide films grown by sputter oxidation
16 6 p. 57
 artikel
43 Reactive ion beam etching of tantalum silicide for VLSI applications
16 6 p. 54
 artikel
44 Reactive ion etching: its basis and future. Part I.
16 6 p. 55
 artikel
45 Reactive ion etching: its basis and future. Part II
16 6 p. 56
 artikel
46 Recent developments in electron resists
16 6 p. 53
 artikel
47 Reliability problems with VLSI
16 6 p. 52
 artikel
48 Research and Development
16 6 p. 59-64
 artikel
49 Smart-power process puts overvoltage protection on chip
16 6 p. 53
 artikel
50 Software aid for mask shop Kundu, N.N.
16 6 p. 7-18
 artikel
51 Sources of failures and yield improvement for VLSI and reconstructable interconnects for RVLSI and WSI: Part I-sources of failures and yield improvements for VLSI
16 6 p. 57
 artikel
52 Sputtered molybdenum—polysilicon interaction for interfacial silicon dioxide growth Singh, Awatar
16 6 p. 4-6
 artikel
53 The density of paltinum and palladium powders for thick film pastes
16 6 p. 54
 artikel
54 The use of the non-contacting temperature measuring techniques in the early detection of hidden faults in electronic components
16 6 p. 58
 artikel
55 XPS analysis of (100) GaAs surfaces after applying a variety of technology-etchants
16 6 p. 57
 artikel
56 X-ray resist trend
16 6 p. 54
 artikel
                             56 gevonden resultaten
 
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