nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A chopper instrumentation amplifier with discrete-time compensation based on current generation unit to eliminate electrode DC offset
|
Wang, Zichao |
|
|
152 |
C |
p. |
artikel |
2 |
A −184 dB PSRR and 2.47 μ V r m s noise self biased bandgap reference based on FVF structure
|
Xie, Jin |
|
|
152 |
C |
p. |
artikel |
3 |
A foreground calibration technique with multi-level dither for a 14-bit 1-MS/s SAR ADC
|
Wang, Ni |
|
|
152 |
C |
p. |
artikel |
4 |
A fully digital timing background calibration algorithm based on first-order auto-correlation for time-interleaved ADCs
|
Li, Meng |
|
|
152 |
C |
p. |
artikel |
5 |
A 56-Gb/s,0.708 pJ/bit single-ended simultaneous bidirectional transceiver with hybrid errors cancellation techniques for die-to-die interface
|
Ren, Bolin |
|
|
152 |
C |
p. |
artikel |
6 |
A 28-47.5 GHz broadband power amplifier using improved MCR technique in 40-nm CMOS
|
Duan, Shize |
|
|
152 |
C |
p. |
artikel |
7 |
A 40 mV cold-start circuit with bootstrap clock booster for thermoelectric energy harvesting
|
Wang, Haizhun |
|
|
152 |
C |
p. |
artikel |
8 |
An approximate dynamic model of double-sided LCC resonant converter in wireless power transmission based on average current model
|
Chen, Zhiwei |
|
|
152 |
C |
p. |
artikel |
9 |
A novel narrowband MEMS filter with extensional mode resonators
|
Wu, Zeyu |
|
|
152 |
C |
p. |
artikel |
10 |
A power-efficient, single-phase, contention-free flip-flop with only three clock transistors
|
Maheshwari, Yugal Kishore |
|
|
152 |
C |
p. |
artikel |
11 |
A reconfigurable FPGA-based spiking neural network accelerator
|
Yin, Mingqi |
|
|
152 |
C |
p. |
artikel |
12 |
Asymmetric CMOS switch for Dicke radiometer in millimeter-wave imaging system
|
Yoon, Joon-Hyuk |
|
|
152 |
C |
p. |
artikel |
13 |
A 3.0-V 4.2-μA 2.23-ppm/°C BGR with cross-connected NPNs and base-current compensation
|
Xue, Weidong |
|
|
152 |
C |
p. |
artikel |
14 |
A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference
|
Cheng, Tiedong |
|
|
152 |
C |
p. |
artikel |
15 |
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
|
Jagadesh, M |
|
|
152 |
C |
p. |
artikel |
16 |
Design of RISC-V out-of-order processor based on segmented exclusive or Gshare branch prediction
|
Yang, Wu |
|
|
152 |
C |
p. |
artikel |
17 |
Editorial Board
|
|
|
|
152 |
C |
p. |
artikel |
18 |
Electroless silver plating on through-glass via (TGV) as an adhesive and conducting layer
|
Huang, Yuxuan |
|
|
152 |
C |
p. |
artikel |
19 |
Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices
|
Geng, Lixin |
|
|
152 |
C |
p. |
artikel |
20 |
Hourglass transistor: An alternative and improved MOS structure robust to total ionization dose radiation
|
Pelcastre Ortega, Carlos Alfredo |
|
|
152 |
C |
p. |
artikel |
21 |
Impacts of quantum confinement effect on threshold voltage and drain-induced barrier lowering effect of junctionless surrounding-gate nanosheet NMOSFET including source/drain depletion regions
|
Xu, Lijun |
|
|
152 |
C |
p. |
artikel |
22 |
Memory architecture to mitigate side channel attacks for cryptographic application using loop cut technique
|
Gupta, Aastha |
|
|
152 |
C |
p. |
artikel |
23 |
Piezoelectric-electromagnetic collaborative energy extraction circuit for wearable vibration energy harvester
|
Huang, Yuqing |
|
|
152 |
C |
p. |
artikel |
24 |
Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT
|
He, Xiaomin |
|
|
152 |
C |
p. |
artikel |
25 |
Variation-aware automated design and optimization of sub-1V bandgap voltage reference
|
Mohammad, Abdelrahman A. |
|
|
152 |
C |
p. |
artikel |