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                             21 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A compact model of DC I–V characteristics for depleted Ga2O3 MOSFETs Jia, Xiaole

140 C p.
artikel
2 A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications Raj Kumar, J.S.

140 C p.
artikel
3 A fully differential wideband analog front end for FMCW LiDAR application Zheng, Xiaoxiao

140 C p.
artikel
4 A 50 Gb/s PAM-4 EAM driver in 28-nm CMOS technology Zhang, Qiuyue

140 C p.
artikel
5 A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance Qi, Yu

140 C p.
artikel
6 A high area-and-energy efficiency 12-bit column-parallel SAR/SS ADC for high-speed infrared focal plane readout circuits with error correction Wang, Qiuwei

140 C p.
artikel
7 A high efficiency and high power 165–180 GHz balanced doubler based on Schottky diode Wang, Li

140 C p.
artikel
8 A ku-band common-leg transceiver with built-in configurable register in 130-nm CMOS technology for phased-array systems Pang, Dongwei

140 C p.
artikel
9 AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer Zhao, Chunxiao

140 C p.
artikel
10 A self-powered extensible P–SSHI array interface circuit with thermoelectric energy assistance for piezoelectric energy harvesting Wang, Yike

140 C p.
artikel
11 A self-powered synchronous magnetic flux extraction interface for electromagnetic energy harvesting Jia, Shengyao

140 C p.
artikel
12 A weak current detection circuit with LDO for electrochemical sensors Zhu, Xiwen

140 C p.
artikel
13 Carrier transport and Negative differential resistance of electrically bipolar devices based on poly(3,4-ethylene-dioxythiophene): Poly (styrene sulfonate) film Sobhy, R.

140 C p.
artikel
14 Carry look-ahead and ripple carry method based 4-bit carry generator circuit for implementing wide-word length adder Khan, Anum

140 C p.
artikel
15 Editorial Board
140 C p.
artikel
16 Engineering negative capacitance Fully Depleted Silicon-on-insulator FET for improved performance Kansal, Harshit

140 C p.
artikel
17 High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study Sivamani, C.

140 C p.
artikel
18 High performance radiation-hardened SRAM cell design for robust applications Kumar, Sandeep

140 C p.
artikel
19 Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications Mounika, B.

140 C p.
artikel
20 Multi-objective Floorplanning optimization engaging dynamic programming for system on chip S, Dayasagar Chowdary

140 C p.
artikel
21 Role of etching parameters on the performance of porous silicon based photodetector devices B, Sharmila

140 C p.
artikel
                             21 gevonden resultaten
 
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