| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accuracy and doping uniformity of ion implantation anent
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14 |
1 |
p. 80
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artikel
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| 2 |
A: contacts to Si-implanted InP
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14 |
1 |
p. 80
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artikel
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| 3 |
A: HAS seeks title of global CAD system
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14 |
1 |
p. 81
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artikel
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| 4 |
A model for the breakdown characteristics of p-channel 4OS transistor protection devices
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14 |
1 |
p. 79
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artikel
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| 5 |
A modular method for LSI circuits testing
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14 |
1 |
p. 80
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artikel
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| 6 |
An active-C resonator and its applications in realising monolithic filter and oscillator
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Khan, I.A.
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14 |
1 |
p. 61-66
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artikel
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| 7 |
Analysis of the effect of mechanical stress on the effective mobility of charge carriers in inversion layers of P/MOS structures
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14 |
1 |
p. 79
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artikel
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| 8 |
An and carbon in Czochralski-grown silicon
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14 |
1 |
p. 80
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artikel
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| 9 |
An integrate FM receivet
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14 |
1 |
p. 81
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artikel
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| 10 |
A review of two dimensional long channel MOSFET modelling
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14 |
1 |
p. 77
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artikel
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| 11 |
Average conductivity of complementary-error and Gaussian doped layers in Gallium arsenide
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14 |
1 |
p. 77
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artikel
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| 12 |
Bipolar circuit design for a 5000-circuit VLSI gate array
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14 |
1 |
p. 81
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artikel
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| 13 |
Britain takes the lead on hybrid components
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14 |
1 |
p. 79
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artikel
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| 14 |
CAD station aims at VLSI design
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14 |
1 |
p. 81
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artikel
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| 15 |
Carrier mobility in laser-annealed silicon-on-sapphire films
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14 |
1 |
p. 77
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artikel
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| 16 |
Center for Solid-State Electronics research at Arizona State University
|
Akers, Lex A.
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14 |
1 |
p. 67-68
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artikel
|
| 17 |
Chip set bestows virtual memory on 16-bit minis
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14 |
1 |
p. 81
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artikel
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| 18 |
CMOS comes of age
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14 |
1 |
p. 81
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artikel
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| 19 |
CMOS uncommitted logic arrays are part-digital, part-analog
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14 |
1 |
p. 81
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artikel
|
| 20 |
Contribution to ion implantation through a narrow slit at higher energies
|
Lutsch, A.G.K.
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14 |
1 |
p. 15-20
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artikel
|
| 21 |
Contribution to range statistics of Boron implanted into Silicon at high energies
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14 |
1 |
p. 80
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artikel
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| 22 |
Diffusion characteristics of antimony and phosphorus spin-on sources
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Prasad, P.M.
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14 |
1 |
p. 49-60
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artikel
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| 23 |
Digital signal processing hits stride with 64-bit correlator C
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14 |
1 |
p. 81
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artikel
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| 24 |
Editorial
|
Butcher, John
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14 |
1 |
p. 3
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artikel
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| 25 |
Editorial Board
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14 |
1 |
p. i
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artikel
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| 26 |
Electromigration and ohmic contact properties of the magnetron-sputtered Al-2%Si alloy films
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14 |
1 |
p. 78
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artikel
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| 27 |
Field-effect transistor automatic microwave characterisation
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14 |
1 |
p. 77-78
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artikel
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| 28 |
Field-effect transistor microwave characterisation: noise figure, gain, power measurements on microwave bench
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14 |
1 |
p. 77
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artikel
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| 29 |
GaAs epitaxial growth for field effect transistors
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14 |
1 |
p. 79-80
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artikel
|
| 30 |
Germanium selenide as a negative inorganic resist for ion beam microfabrication
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Balasubramanyam, K.
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14 |
1 |
p. 35-42
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artikel
|
| 31 |
Implantation through a window with medium to high energy ions
|
Lutsch, A.G.
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14 |
1 |
p. 21-34
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artikel
|
| 32 |
Interpretation of non-equilibium measurements on MOS devices using the linear voltage ramp technique
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14 |
1 |
p. 78
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artikel
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| 33 |
Ion range statistics by a fourier series
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Lutsch, A.G.K.
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14 |
1 |
p. 5-13
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artikel
|
| 34 |
Localised anodic thinning of GaAs structures
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14 |
1 |
p. 77
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artikel
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| 35 |
Membrane touch switches: thick-film material systems and processing options
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14 |
1 |
p. 79
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artikel
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| 36 |
Metal thick-film conductors
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14 |
1 |
p. 80
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artikel
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| 37 |
Microelectronics in China 1979–82 — A review
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McClelland, S.
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14 |
1 |
p. 69-71
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artikel
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| 38 |
Microelectronic test structures for characterising fine-line lithography
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14 |
1 |
p. 78
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artikel
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| 39 |
Microprocessors and the M. D. A new breed of smart medical equipment can diagnose, analyse, and rehabilitate
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14 |
1 |
p. 81
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artikel
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| 40 |
Minimising the parts count of multichannel data systems
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14 |
1 |
p. 81
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artikel
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| 41 |
MOS devices - Design and manufacture
|
Butcher, John
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14 |
1 |
p. 73
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artikel
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| 42 |
Multifiunction chip plays many parts in analog design
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14 |
1 |
p. 81
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artikel
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| 43 |
Multi-scan electron beam sintering of Al−Si OHMIC contacts
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14 |
1 |
p. 80
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artikel
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| 44 |
New process boosts current levels of monolithic voltage regulator
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14 |
1 |
p. 81
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artikel
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| 45 |
[No title]
|
Randhawa, G.
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14 |
1 |
p. 73-74
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artikel
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| 46 |
On the correlation of “hot” and “cold” electron-hole drop densities in uniaxially stressed silicon
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14 |
1 |
p. 79
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artikel
|
| 47 |
Passivation of gallium arsenide by reactively sputtered gallium nitride thin films
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Bhattacharyya, A.B.
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14 |
1 |
p. 43-48
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artikel
|
| 48 |
Performance of digital integrated circuit technologies at very high temperatures
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14 |
1 |
p. 78
|
artikel
|
| 49 |
Planar double-heterostructure GaAlAs LED's packaged for fiber optics
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14 |
1 |
p. 78
|
artikel
|
| 50 |
Silicon temperature sensors require little compensation
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14 |
1 |
p. 81
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artikel
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| 51 |
Stress-sensitive properties of silicon-gate MOS devices
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14 |
1 |
p. 79
|
artikel
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| 52 |
System performs complete SLIC tests
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14 |
1 |
p. 80
|
artikel
|
| 53 |
The impact of microelectronics technology
|
Butcher, John
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14 |
1 |
p. 74
|
artikel
|
| 54 |
Tracking performance of film resistors: definitions and theory
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14 |
1 |
p. 78
|
artikel
|
| 55 |
V-channel process increases speed and density of MNOS EE-PROMs
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14 |
1 |
p. 81
|
artikel
|
| 56 |
Your fortune in the microcomputer business
|
Krejcik, Milos
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|
14 |
1 |
p. 75
|
artikel
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