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                                       Details for article 51 of 56 found articles
 
 
  Stress-sensitive properties of silicon-gate MOS devices
 
 
Title: Stress-sensitive properties of silicon-gate MOS devices
Author:
Appeared in: Microelectronics journal
Paging: Volume 14 () nr. 1 pages 79
Year: 1983
Contents:
Publisher: Benn Electronics Publications Ltd, Luton
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 51 of 56 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands