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                             66 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerator mass spectrometry—an overview Hellborg, R.
2003
70 2-3 p. 365-372
artikel
2 A high-pressure mass spectrometric study of ion–molecule reactions of Ar+ with C3H6 Bederski, Krzysztof
2003
70 2-3 p. 373-379
artikel
3 An ion source for solid elements with mechanical sputtering Meldizon, J.
2003
70 2-3 p. 447-450
artikel
4 Brazing of alumina ceramics modified by pulsed plasma beams combined with arc PVD treatment Piekoszewski, J.
2003
70 2-3 p. 307-312
artikel
5 Characteristics of surface and film morphology in the IBAD deposition process: a Monte Carlo simulation study Oleszkiewicz, Waldemar
2003
70 2-3 p. 347-352
artikel
6 Compressive plasma flows interaction with steel surface: structure and mechanical properties of modified layer Anishchik, V.M.
2003
70 2-3 p. 269-274
artikel
7 Core–shell morphology of welding fume micro- and nanoparticles Konarski, P
2003
70 2-3 p. 385-389
artikel
8 Determination of hydrogen in GaMnN and GaMnMgN by nuclear reaction analysis Podsiadło, Sławomir
2003
70 2-3 p. 207-213
artikel
9 Diffusion and activation of Si implanted into GaAs Jakieła, Rafał
2003
70 2-3 p. 97-101
artikel
10 Editorial Board and Publication Information 2003
70 2-3 p. IFC
artikel
11 Effects of high dose nitrogen implantation into aluminum Jagielski, J.
2003
70 2-3 p. 147-152
artikel
12 Electrical and mechanical properties of surface layers deposited on copper by the novel IBAD method Karwat, Cz.
2003
70 2-3 p. 221-225
artikel
13 Electron attachment to simple organic acids Pelc, A.
2003
70 2-3 p. 429-433
artikel
14 Electron signal acquisition in HPSEM Slówko, Witold
2003
70 2-3 p. 157-162
artikel
15 Energy loss effective charge for slow ions in electron gas Moneta, Marek
2003
70 2-3 p. 359-364
artikel
16 Field electron emission from laser the engraved surface Znamirowski, Z.
2003
70 2-3 p. 397-402
artikel
17 Field emission from sintered CrSi2 Czarczyński, Wojciech
2003
70 2-3 p. 299-302
artikel
18 Formation of C x N y films by high dose nitrogen implantation in the layered structures Komarov, A.F.
2003
70 2-3 p. 141-145
artikel
19 Formation of polymeric layer during silicon etching in CF2Cl2 plasma Grigonis, A.
2003
70 2-3 p. 319-322
artikel
20 Formation of water dimers in expanding air flows Ptasińska, Sylwia
2003
70 2-3 p. 403-409
artikel
21 Fractal analysis of ion-sputtered stainless steel surface Przybylski, G.
2003
70 2-3 p. 255-261
artikel
22 GaAs on Si: towards a low-temperature “smart-cut” technology Gawlik, Grzegorz
2003
70 2-3 p. 103-107
artikel
23 Growth of nitrided layer after cathode sputtering Baranowska, J.
2003
70 2-3 p. 293-297
artikel
24 High-current and broad-beam ion implanter Guglya, A.
2003
70 2-3 p. 353-358
artikel
25 High pressure mass spectrometric study of ion/molecule reactions in the carbon dioxide–methane mixtures Wójcik, Leszek
2003
70 2-3 p. 391-395
artikel
26 High-quality p–n junction fabrication by ion implantation using the LPCVD amorphous silicon films Jaroszewicz, Bohdan
2003
70 2-3 p. 81-85
artikel
27 High-spin paramagnetic centers of irradiated elemental semiconductors Fedaruk, R.
2003
70 2-3 p. 175-179
artikel
28 High temperature behaviour of fission product analogues implanted into nuclear ceramics Gentils, A.
2003
70 2-3 p. 123-129
artikel
29 Influence of amorphization–recrystallization processes on distribution of selenium and oxygen atoms implanted in silicon Tishkovsky, Eugene
2003
70 2-3 p. 153-156
artikel
30 Influence of anodic oxidation on the bioactivity and corrosion resistance of phosphorus-ion implanted titanium Krupa, D.
2003
70 2-3 p. 109-113
artikel
31 Influence of nitrogen and titanium implantation on the tribological properties of steel Budzynski, P.
2003
70 2-3 p. 417-421
artikel
32 Influence of nitrogen ion beam assisted deposition of Cr on tribological properties of tool steel NW1 Budzynski, P.
2003
70 2-3 p. 411-416
artikel
33 Influence of potassium chloride on the MALDI detection process Ptasińska, Sylwia
2003
70 2-3 p. 439-445
artikel
34 Influence of the Ca- and P-enriched oxide layers produced on titanium and the Ti6Al4V alloy by the IBAD method upon the corrosion resistance of these materials Baszkiewicz, J
2003
70 2-3 p. 163-167
artikel
35 Investigation of radiation-induced defects in the electron irradiated power transistor structures Korshunov, F.P.
2003
70 2-3 p. 197-200
artikel
36 ION 2002 Michalak, Leszek
2003
70 2-3 p. 73-74
artikel
37 Ion beam analysis methods in the studies of plasma facing materials in controlled fusion devices Rubel, M.
2003
70 2-3 p. 423-428
artikel
38 Ion beam assisted deposition of metal layers using a novel one beam system Komarov, F.F.
2003
70 2-3 p. 215-220
artikel
39 Ion beam modification of surface properties of polyethylene Turos, Andrzej
2003
70 2-3 p. 201-206
artikel
40 Ion implantation induced surface morphology changes in thin As3Se2 films Tsvetkova, T.
2003
70 2-3 p. 471-475
artikel
41 Light emission from the cathode zone of DC glow discharge Wroński, Z.
2003
70 2-3 p. 339-345
artikel
42 Mechanical and thermal properties of gamma-ray irradiated polyethylene blends Al-Ali, Mariam
2003
70 2-3 p. 227-236
artikel
43 Mechanisms of forming the Cr–N composite in the unsteady-state stage of ion beam-assisted deposition process Bendikov, V.I.
2003
70 2-3 p. 331-337
artikel
44 New types of multi-component hard coatings deposited by ARC PVD on steel pre-treated by pulsed plasma beams Werner, Z.
2003
70 2-3 p. 263-267
artikel
45 PECVD formation of ultrathin silicon nitride layers for CMOS technology Beck, R.B.
2003
70 2-3 p. 323-329
artikel
46 Phase changes in steels irradiated with intense pulsed plasma beams Sartowska, B.
2003
70 2-3 p. 285-291
artikel
47 Photoelectric work function determination for the nanostructural carbonaceous films Czerwosz, E
2003
70 2-3 p. 237-241
artikel
48 Plasma ion source with hollow cathode Latuszyński, A.
2003
70 2-3 p. 451-455
artikel
49 RBS and ERD study of epitaxial RuO2 films deposited on different single crystal substrates Machajdı́k, Daniel
2003
70 2-3 p. 313-317
artikel
50 RBS and optical studies of ion-implanted amorphous silicon carbide layers Romanek, J.
2003
70 2-3 p. 457-465
artikel
51 Reactive ion etching of novel materials—GaN and SiC Szczęsny, A.
2003
70 2-3 p. 249-254
artikel
52 Relations between deposition conditions, microstructure and mechanical properties of amorphous carbon-metal films Uglova, V.V.
2003
70 2-3 p. 181-185
artikel
53 Resistance to high-temperature oxidation in B+Si implanted TiN coatings on steel Werner, Z.
2003
70 2-3 p. 93-96
artikel
54 Snow plow model of IPD discharge Rabiński, Marek
2003
70 2-3 p. 303-306
artikel
55 Stress development during thin film growth and its modification under ion irradiation Pieńkos, T.
2003
70 2-3 p. 243-248
artikel
56 Structural and optical properties modification of a-SiC:H by Ga+ ion implantation Tsvetkova, T
2003
70 2-3 p. 467-470
artikel
57 Study of the recombination properties of thermostable radiation defects in p–n structures manufactured in high resistivity neutron transmutation-doped silicon Korshunov, F.P.
2003
70 2-3 p. 193-196
artikel
58 The effect of diffusion treatments in a glow-discharge plasma in Ar+O2 atmosphere on friction and wear of Ti–6Al–4V alloy Dudek, M.
2003
70 2-3 p. 187-191
artikel
59 The long-range influence of the ion and photon irradiation on the mechanical properties and on the composition of the permalloy-79 Tetelbaum, D.I.
2003
70 2-3 p. 169-173
artikel
60 The sputtering of light target material during implantation of heavy ions Sielanko, J.
2003
70 2-3 p. 381-384
artikel
61 Thin film sputtered silicon for silicon wafer bonding applications Hurley, R.E
2003
70 2-3 p. 131-140
artikel
62 Ti and Fe cathode sputtering by the glow discharge plasma Wroński, Z.
2003
70 2-3 p. 275-284
artikel
63 Titanium surface after neutralized ion beam irradiation Wilk, J.
2003
70 2-3 p. 87-91
artikel
64 Track formation in germanium crystals irradiated with superhigh-energy ions Komarov, F.F.
2003
70 2-3 p. 75-79
artikel
65 Vacuum selenization of metallic multilayers for CIS solar cells Pisarkiewicz, T.
2003
70 2-3 p. 435-438
artikel
66 X-Ray studies of Al x GA1−x As Implanted with 1.5MeV As ions Wierzchowski, W.
2003
70 2-3 p. 115-121
artikel
                             66 gevonden resultaten
 
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