| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aluminum nitride thin films prepared by radical-assisted pulsed laser deposition
|
Ishihara, M
|
|
2000
|
59 |
2-3 |
p. 649-656
8 p.
|
artikel
|
| 2 |
Basic characteristics of TiO2 film for environmental purification deposited by electron-beam-excited plasma
|
Ikezawa, Shunjiro
|
|
2000
|
59 |
2-3 |
p. 514-521
8 p.
|
artikel
|
| 3 |
Boron nitride thin films synthesized by reactive sputtering
|
Hu, C
|
|
2000
|
59 |
2-3 |
p. 748-754
7 p.
|
artikel
|
| 4 |
Conductive transparent films deposited by simultaneous sputtering of zinc-oxide and indium-oxide targets
|
Tominaga, K
|
|
2000
|
59 |
2-3 |
p. 546-552
7 p.
|
artikel
|
| 5 |
Dependence of metal sheet resistance on metal etch/post-etch treatment and subsequent process conditions
|
Yoo, K.J
|
|
2000
|
59 |
2-3 |
p. 693-700
8 p.
|
artikel
|
| 6 |
Deposition of TiC films by dual source dc magnetron sputtering
|
Inoue, S
|
|
2000
|
59 |
2-3 |
p. 735-741
7 p.
|
artikel
|
| 7 |
Development of a locally electron-heated plasma source
|
Seki, H.
|
|
2000
|
59 |
2-3 |
p. 445-450
6 p.
|
artikel
|
| 8 |
Development of biased directional sputtering (BDS) for barrier metal formation
|
Sato, H
|
|
2000
|
59 |
2-3 |
p. 437-444
8 p.
|
artikel
|
| 9 |
Early stages of ITO deposition on glass or polymer substrates
|
Shigesato, Y
|
|
2000
|
59 |
2-3 |
p. 614-621
8 p.
|
artikel
|
| 10 |
Effect of d.c. bias on the deposition rate using r.f.–d.c. coupled magnetron sputtering for SnN x thin films
|
Kamei, R
|
|
2000
|
59 |
2-3 |
p. 764-770
7 p.
|
artikel
|
| 11 |
Effect of input power on crystal orientation and residual stress in AlN film deposited by dc sputtering
|
Kusaka, K
|
|
2000
|
59 |
2-3 |
p. 806-813
8 p.
|
artikel
|
| 12 |
Effect of microwave ferrite on the density distribution of microwave-superposed inductively coupled plasma
|
Okuji, S
|
|
2000
|
59 |
2-3 |
p. 686-692
7 p.
|
artikel
|
| 13 |
Effect of substrate surface morphology and interface microstructure in ZnO thin films formed on various substrates
|
Yoshino, Y
|
|
2000
|
59 |
2-3 |
p. 403-410
8 p.
|
artikel
|
| 14 |
Effect of the hydrogen partial pressure ratio on the properties of μc-Si:H films prepared by rf magnetron sputtering
|
Makihara, H
|
|
2000
|
59 |
2-3 |
p. 785-791
7 p.
|
artikel
|
| 15 |
Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution
|
Yokomichi, H
|
|
2000
|
59 |
2-3 |
p. 771-776
6 p.
|
artikel
|
| 16 |
Effects of partial oxygen pressure on the crystal growth of PbTiO3 thin films on miscut (001)SrTiO3
|
Ichikawa, Y
|
|
2000
|
59 |
2-3 |
p. 417-423
7 p.
|
artikel
|
| 17 |
Epitaxial growth of CdSeTe films by remote plasma enhanced metal organic chemical vapor deposition
|
Noda, Daiji
|
|
2000
|
59 |
2-3 |
p. 701-707
7 p.
|
artikel
|
| 18 |
Epitaxial growth properties of Si and SiGe films prepared by ion beam sputtering process
|
Sasaki, K
|
|
2000
|
59 |
2-3 |
p. 397-402
6 p.
|
artikel
|
| 19 |
Focusing efficiency of a multilayer Fresnel zone plate for hard X-ray fabricated by DC sputtering deposition
|
Tamura, Shigeharu
|
|
2000
|
59 |
2-3 |
p. 553-558
6 p.
|
artikel
|
| 20 |
Formation process of Ni–N films by reactive sputtering at different substrate temperatures
|
Kawamura, M
|
|
2000
|
59 |
2-3 |
p. 721-726
6 p.
|
artikel
|
| 21 |
Hard disk media: future problems and possible solutions
|
Lambeth, David N.
|
|
2000
|
59 |
2-3 |
p. 522-530
9 p.
|
artikel
|
| 22 |
Holey-plate plasma source for plasma processing
|
Yoshida, Y
|
|
2000
|
59 |
2-3 |
p. 459-465
7 p.
|
artikel
|
| 23 |
Hydrophilic characteristics of rf-sputtered amorphous TiO2 film
|
Nakamura, M
|
|
2000
|
59 |
2-3 |
p. 506-513
8 p.
|
artikel
|
| 24 |
Improvement of the electrical properties of heteroepitaxial yttria-stabilized zirconia (YSZ) films on Si prepared by reactive sputtering
|
Horita, S
|
|
2000
|
59 |
2-3 |
p. 390-396
7 p.
|
artikel
|
| 25 |
Influence of H2O partial pressure in the sputtering chamber on the crystallinity and relative dielectric constant of SrTiO3 thin film prepared at low substrate temperature
|
Nakagawara, Osamu
|
|
2000
|
59 |
2-3 |
p. 742-747
6 p.
|
artikel
|
| 26 |
Initial growth characteristic of Ni–Cu films deposited on MgO(001) by DC-biased plasma sputtering
|
Qiu, Hong
|
|
2000
|
59 |
2-3 |
p. 411-416
6 p.
|
artikel
|
| 27 |
Internal-antenna-driven inductive RF discharges for development of large-area high-density plasma sources with suppressed electrostatic coupling
|
Miyake, S
|
|
2000
|
59 |
2-3 |
p. 472-478
7 p.
|
artikel
|
| 28 |
Ion fraction and energy distribution of Ti flux incident to substrate surface in RF-plasma enhanced magnetron sputtering
|
Fukushima, K
|
|
2000
|
59 |
2-3 |
p. 586-593
8 p.
|
artikel
|
| 29 |
Large-area production of solar absorbent multilayers by MF-pulsed plasma technology
|
Milde, F
|
|
2000
|
59 |
2-3 |
p. 825-835
11 p.
|
artikel
|
| 30 |
Light-absorbing wide-band AR coatings on PET films by sputtering
|
Oyama, Takuji
|
|
2000
|
59 |
2-3 |
p. 479-483
5 p.
|
artikel
|
| 31 |
Low ohm large area ITO coating by reactive magnetron sputtering in DC and MF mode
|
Strümpfel, J
|
|
2000
|
59 |
2-3 |
p. 500-505
6 p.
|
artikel
|
| 32 |
Low-temperature growth and n-type doping of CdTe by the remote-plasma-assisted metalorganic chemical vapor deposition method
|
Niraula, Madan
|
|
2000
|
59 |
2-3 |
p. 678-685
8 p.
|
artikel
|
| 33 |
Low-temperature growth of low-resistivity indium-tin-oxide thin films by pulsed laser deposition
|
Adurodija, F.O
|
|
2000
|
59 |
2-3 |
p. 641-648
8 p.
|
artikel
|
| 34 |
Magnetron sputtering cathode with confined magnetic flux
|
Ai, Ryuta
|
|
2000
|
59 |
2-3 |
p. 466-471
6 p.
|
artikel
|
| 35 |
Mass spectrometry and absorption spectroscopy for oxidation of titanium target in rf magnetron sputtering
|
Okimura, Kunio
|
|
2000
|
59 |
2-3 |
p. 600-605
6 p.
|
artikel
|
| 36 |
Measurements of negative ion density in fluorocarbon ECR plasma
|
Shindo, M
|
|
2000
|
59 |
2-3 |
p. 708-715
8 p.
|
artikel
|
| 37 |
650mm×830mm area sputtering deposition using a separated magnet system
|
Seino, Tomoyuki
|
|
2000
|
59 |
2-3 |
p. 431-436
6 p.
|
artikel
|
| 38 |
New DLC coating method using magnetron plasma in an unbalanced magnetic field
|
Fujimaki, S
|
|
2000
|
59 |
2-3 |
p. 657-664
8 p.
|
artikel
|
| 39 |
Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films
|
Masuda, Atsushi
|
|
2000
|
59 |
2-3 |
p. 635-640
6 p.
|
artikel
|
| 40 |
Optical and structural properties of dense SiO2, Ta2O5 and Nb2O5 thin-films deposited by indirectly reactive sputtering technique
|
Song, Yizhou
|
|
2000
|
59 |
2-3 |
p. 755-763
9 p.
|
artikel
|
| 41 |
Optimization of zinc oxide thin film for surface acoustic wave filters by radio frequency sputtering
|
Yoshino, Y
|
|
2000
|
59 |
2-3 |
p. 538-545
8 p.
|
artikel
|
| 42 |
Phonon scattering in electron transport phenomena of ITO films
|
Kikuchi, Naoto
|
|
2000
|
59 |
2-3 |
p. 492-499
8 p.
|
artikel
|
| 43 |
Pinholes in Al thin films: their effects on TFT characteristics and a taguchi method analysis of their origins
|
Takatsuji, Hiroshi
|
|
2000
|
59 |
2-3 |
p. 606-613
8 p.
|
artikel
|
| 44 |
Precise determination of the refractive index of sputtered MgO thin films in the visible light range
|
Baba, Shigeru
|
|
2000
|
59 |
2-3 |
p. 531-537
7 p.
|
artikel
|
| 45 |
Preparation and characterization of highly oriented Pb(Zr,Ti)O3 thin films with seeding titanium layer deposited at low temperature by facing target sputtering
|
Li, Xin-Shan
|
|
2000
|
59 |
2-3 |
p. 800-805
6 p.
|
artikel
|
| 46 |
Preparation and properties of Pb(Zr, Ti)O3 thin films deposited on Ir electrodes using a sputtering apparatus
|
Kim, Je-Deok
|
|
2000
|
59 |
2-3 |
p. 559-566
8 p.
|
artikel
|
| 47 |
Preparation and thickness dependence of magnetic properties of (111)-oriented Mg1.5FeTi0.5O4 spinel films on sapphire by pulsed laser deposition technique
|
Muraoka, Y
|
|
2000
|
59 |
2-3 |
p. 622-627
6 p.
|
artikel
|
| 48 |
Preparation of BST ferroelectric thin film by pulsed laser ablation for dielectric bolometers
|
Xu, Huaping
|
|
2000
|
59 |
2-3 |
p. 628-634
7 p.
|
artikel
|
| 49 |
Pressure dependence of optical emission from DC magnetron sputtering plasma observed with spatial resolution
|
Nakano, Takeo
|
|
2000
|
59 |
2-3 |
p. 581-585
5 p.
|
artikel
|
| 50 |
Properties of high-density (Pb, La) (Zr, Ti) O3 ceramics for sputtering targets
|
Hidaka, K
|
|
2000
|
59 |
2-3 |
p. 451-458
8 p.
|
artikel
|
| 51 |
Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)
|
Nicolet, Marc-A
|
|
2000
|
59 |
2-3 |
p. 716-720
5 p.
|
artikel
|
| 52 |
Relation between the flux of energetic oxygen ions and the sputtered metal atoms in oxide film deposition by reactive sputtering
|
Tominaga, Kikuo
|
|
2000
|
59 |
2-3 |
p. 574-580
7 p.
|
artikel
|
| 53 |
RF sputtering of polymers and its potential application
|
Biederman, H
|
|
2000
|
59 |
2-3 |
p. 594-599
6 p.
|
artikel
|
| 54 |
Silicon selective growth on partially oxidized substrate by ECR plasma CVD technique
|
Sasaki, K
|
|
2000
|
59 |
2-3 |
p. 672-677
6 p.
|
artikel
|
| 55 |
Some issues on hydrogen and hydrogenation of plasma enhanced chemical vapor deposited films in a-Si:H thin-film transistors
|
Kuo, Yue
|
|
2000
|
59 |
2-3 |
p. 484-491
8 p.
|
artikel
|
| 56 |
Sputtered silver-based low-emissivity coatings with high moisture durability
|
Ando, E.
|
|
2000
|
59 |
2-3 |
p. 792-799
8 p.
|
artikel
|
| 57 |
Surface morphology of TiN films reactively deposited by bias sputtering
|
Takahashi, T
|
|
2000
|
59 |
2-3 |
p. 777-784
8 p.
|
artikel
|
| 58 |
TiO2−X sputter for high rate deposition of TiO2
|
Tachibana, Yuko
|
|
2000
|
59 |
2-3 |
p. 836-843
8 p.
|
artikel
|
| 59 |
Tribological properties of a-C:N and a-C films prepared by shielded arc ion plating
|
Tajima, N
|
|
2000
|
59 |
2-3 |
p. 567-573
7 p.
|
artikel
|
| 60 |
TwinMag II: Improving an advanced sputtering tool
|
Heister, U
|
|
2000
|
59 |
2-3 |
p. 424-430
7 p.
|
artikel
|
| 61 |
Ultra-clean sputtering process for magnetic thin films on hard disk drives
|
Takahashi, Migaku
|
|
2000
|
59 |
2-3 |
p. 814-824
11 p.
|
artikel
|
| 62 |
Ultrathin Al2O3 and AlN films deposited by reactive sputter using advanced electron cyclotron resonance plasma source
|
Shimada, M.
|
|
2000
|
59 |
2-3 |
p. 727-734
8 p.
|
artikel
|
| 63 |
Uniform deposition of SiC thin films on plastics surfaces
|
Anma, H
|
|
2000
|
59 |
2-3 |
p. 665-671
7 p.
|
artikel
|
| 64 |
Yttria-stabilized zirconia (YSZ) heteroepitaxially grown on Si substrates by reactive sputtering
|
Hata, Tomonobu
|
|
2000
|
59 |
2-3 |
p. 381-389
9 p.
|
artikel
|
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