| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced plasma processing techniques for metallization in giga scale technology
|
Dixit, G.A
|
|
1998
|
51 |
4 |
p. 723-727
5 p.
|
artikel
|
| 2 |
Advanced sputtering techniques for high rate-, plasma free- deposition and excellent target utility with uniform erosion
|
Kadokura, S
|
|
1998
|
51 |
4 |
p. 683-686
4 p.
|
artikel
|
| 3 |
Analysis of stray magnetic field at the substrate and effect of applying external magnetic field in facing targets sputtering
|
Ichihara, T
|
|
1998
|
51 |
4 |
p. 715-718
4 p.
|
artikel
|
| 4 |
A new technique for monitoring the microscopic electronic surface structures of sputtered thin films
|
Obara, K.
|
|
1998
|
51 |
4 |
p. 491-496
6 p.
|
artikel
|
| 5 |
A role of energetic ions in RF-biased PECVD of TiO2
|
Hoon Lee, Young
|
|
1998
|
51 |
4 |
p. 503-509
7 p.
|
artikel
|
| 6 |
A sputter equipment simulation system for Vlsi device
|
Ohta, T
|
|
1998
|
51 |
4 |
p. 479-484
6 p.
|
artikel
|
| 7 |
Cathodic arc deposition of titanium nitride coatings on commercial steels
|
Iqbal, Z
|
|
1998
|
51 |
4 |
p. 629-633
5 p.
|
artikel
|
| 8 |
Compact sputtering apparatus for depositing Co–Cr alloy thin films in magnetic disks
|
Kitamoto, Yoshitaka
|
|
1998
|
51 |
4 |
p. 571-574
4 p.
|
artikel
|
| 9 |
Control of Cl2 plasma by electron-beam-excited plasma and poly-Si etching
|
Mikawa, Yasuhiro
|
|
1998
|
51 |
4 |
p. 531-535
5 p.
|
artikel
|
| 10 |
Control of nano-structure of the initial growth layers of Co–Cr thin films deposited by facing targets sputtering
|
Nakagawa, Shigeki
|
|
1998
|
51 |
4 |
p. 595-599
5 p.
|
artikel
|
| 11 |
Crystal growth of epitaxially grown PbTiO3 thin films on miscut SrTiO3 substrate
|
Wasa, K
|
|
1998
|
51 |
4 |
p. 591-594
4 p.
|
artikel
|
| 12 |
Development of a locally-electron-heated plasma source for HDP-CVD process
|
Seki, H.
|
|
1998
|
51 |
4 |
p. 695-697
3 p.
|
artikel
|
| 13 |
Effect of an interfacial layer on adhesion strength deterioration between a copper thin film and polyimide substrates
|
Iwamori, Satoru
|
|
1998
|
51 |
4 |
p. 615-618
4 p.
|
artikel
|
| 14 |
Effects of CH4 addition to Ar–O2 discharge gases on resistivity and structure of ITO coatings
|
Kusano, E
|
|
1998
|
51 |
4 |
p. 785-789
5 p.
|
artikel
|
| 15 |
Effects of He on Cu film formation by rf sputtering
|
Koyanagi, T
|
|
1998
|
51 |
4 |
p. 575-582
8 p.
|
artikel
|
| 16 |
Effects of interface micro structure in crystallization of ZnO thin films prepared by radio frequency sputtering
|
Yoshino, Y
|
|
1998
|
51 |
4 |
p. 601-607
7 p.
|
artikel
|
| 17 |
Effects of ion bombardment to interfaces on residual internal stress and crystallite structures on multilayered films
|
Miyamoto, Y
|
|
1998
|
51 |
4 |
p. 711-714
4 p.
|
artikel
|
| 18 |
Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD
|
Sasaki, K.
|
|
1998
|
51 |
4 |
p. 537-541
5 p.
|
artikel
|
| 19 |
Fundamentals of plasma and sputtering processes
|
Kinbara, A.
|
|
1998
|
51 |
4 |
p. 475-478
4 p.
|
artikel
|
| 20 |
Heteroepitaxial growth of YSZ films on Si(100) substrate by using new metallic mode of reactive sputtering
|
Hata, T.
|
|
1998
|
51 |
4 |
p. 583-590
8 p.
|
artikel
|
| 21 |
High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD
|
Takagi, T
|
|
1998
|
51 |
4 |
p. 751-755
5 p.
|
artikel
|
| 22 |
High-rate reactive DC magnetron sputtering of oxide and nitride superlattice coatings
|
Sproul, WD
|
|
1998
|
51 |
4 |
p. 641-646
6 p.
|
artikel
|
| 23 |
Improvement of thickness distribution and crystallinity of ZnO thin films prepared by radio frequency planer magnetron sputtering
|
Takeuchi, M
|
|
1998
|
51 |
4 |
p. 565-569
5 p.
|
artikel
|
| 24 |
K-M-S (keep-molecules sputtering) deposition of optical MgF2 thin films
|
Kawamata, K
|
|
1998
|
51 |
4 |
p. 559-564
6 p.
|
artikel
|
| 25 |
Low temperature polycrystalline silicon thin film transistors
|
Jang, Jin
|
|
1998
|
51 |
4 |
p. 769-775
7 p.
|
artikel
|
| 26 |
Magnetic field dependence of AlN film properties in dc planar magnetron sputtering with opposed targets
|
Tominaga, K.
|
|
1998
|
51 |
4 |
p. 549-553
5 p.
|
artikel
|
| 27 |
Manufacture of complex optical multilayer filters using an automated deposition system
|
Sullivan, BT
|
|
1998
|
51 |
4 |
p. 647-654
8 p.
|
artikel
|
| 28 |
Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled yttria contents on Si prepared by reactive sputtering
|
Horita, S
|
|
1998
|
51 |
4 |
p. 609-613
5 p.
|
artikel
|
| 29 |
Mid frequency sputtering with TwinMag®-a survey of recent results
|
Bräuer, G
|
|
1998
|
51 |
4 |
p. 655-659
5 p.
|
artikel
|
| 30 |
Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition
|
Heinrich, F
|
|
1998
|
51 |
4 |
p. 497-502
6 p.
|
artikel
|
| 31 |
Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films
|
Lungu, C.P
|
|
1998
|
51 |
4 |
p. 635-640
6 p.
|
artikel
|
| 32 |
Novel facing targets sputtering apparatus with uniform magnetic field and plasma-free substrates
|
Noda, Kohki
|
|
1998
|
51 |
4 |
p. 687-690
4 p.
|
artikel
|
| 33 |
Optimization of extrinsic TFT mobility on 550mm×650mm large glass
|
Takeichi, M.
|
|
1998
|
51 |
4 |
p. 757-760
4 p.
|
artikel
|
| 34 |
Optimization of sputtering conditions for protective carbon thin films of rigid disks deposited by FTS
|
Noda, K
|
|
1998
|
51 |
4 |
p. 735-740
6 p.
|
artikel
|
| 35 |
Origin of oxygen in Pb(Zr,Ti)O3 films prepared by metal-oxide combined target
|
Sasaki, K
|
|
1998
|
51 |
4 |
p. 661-664
4 p.
|
artikel
|
| 36 |
Physical properties of reactive sputtered tin-nitride thin films
|
Inoue, Y
|
|
1998
|
51 |
4 |
p. 673-676
4 p.
|
artikel
|
| 37 |
Plasma diagnosis and low-substrate-temperature deposition of Ba ferrite films in a damage-free sputtering apparatus with mixed gases
|
Matsushita, Nobuhiro
|
|
1998
|
51 |
4 |
p. 543-548
6 p.
|
artikel
|
| 38 |
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review
|
Kuo, Yue
|
|
1998
|
51 |
4 |
p. 741-745
5 p.
|
artikel
|
| 39 |
Preparation and photocatalysis evaluation of anatase film on Pt-buffered polyimide
|
Sheng, J
|
|
1998
|
51 |
4 |
p. 623-627
5 p.
|
artikel
|
| 40 |
Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors
|
Horio, N
|
|
1998
|
51 |
4 |
p. 719-722
4 p.
|
artikel
|
| 41 |
Proposal of new mixture target for PZT thin films by reactive sputtering
|
Hata, T
|
|
1998
|
51 |
4 |
p. 665-671
7 p.
|
artikel
|
| 42 |
Reaction mechanism of trilevel resist etching in O2/SO2 plasma: controlling factors for sidewall passivation
|
Ha, J.H.
|
|
1998
|
51 |
4 |
p. 519-524
6 p.
|
artikel
|
| 43 |
Reactive ion etching of indium tin oxide by SiCl4-based plasmas—substrate temperature effect
|
Kuo, Yue
|
|
1998
|
51 |
4 |
p. 777-779
3 p.
|
artikel
|
| 44 |
Reduction of residual stress for ZnO/Al thin films on glass substrate prepared by radio frequency magnetron sputtering
|
Sakaguchi, K
|
|
1998
|
51 |
4 |
p. 677-681
5 p.
|
artikel
|
| 45 |
Shading damage in sputter cleaning using Ar gas plasma
|
Aoyama, M
|
|
1998
|
51 |
4 |
p. 555-558
4 p.
|
artikel
|
| 46 |
Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane
|
Aoki, Toru
|
|
1998
|
51 |
4 |
p. 747-750
4 p.
|
artikel
|
| 47 |
Simulation of particle transport in high pressure sputtering
|
Nakano, Takeo
|
|
1998
|
51 |
4 |
p. 485-489
5 p.
|
artikel
|
| 48 |
Stress reduction of chromium thin films deposited by cluster-type sputtering system for ultra-large-size (550×650mm) substrates
|
Nakajima,, Katsunori
|
|
1998
|
51 |
4 |
p. 761-764
4 p.
|
artikel
|
| 49 |
Structure and properties of CeN thin films deposited in arc discharge
|
Xiao, S.Q.
|
|
1998
|
51 |
4 |
p. 691-694
4 p.
|
artikel
|
| 50 |
Sub-quarter micron metallization using ionized metal plasma (IMP) technology
|
Tanaka, Y
|
|
1998
|
51 |
4 |
p. 729-733
5 p.
|
artikel
|
| 51 |
Syntheses and optical properties of low-temperature SiOx and TiOx thin films prepared by plasma enhanced CVD
|
Song, Yizhou
|
|
1998
|
51 |
4 |
p. 525-530
6 p.
|
artikel
|
| 52 |
The application of high density plasma sources for optoelectronic devicefabrication
|
Humphreys, Bedwyr
|
|
1998
|
51 |
4 |
p. 511-517
7 p.
|
artikel
|
| 53 |
The effects of B2 structured underlayers on thin film magnetic recording media
|
Lee, Li-Lien
|
|
1998
|
51 |
4 |
p. 703-710
8 p.
|
artikel
|
| 54 |
Two-step-etching process of MoW gate metal on large TFT glass substrates
|
Okajima, Kenji
|
|
1998
|
51 |
4 |
p. 765-768
4 p.
|
artikel
|
| 55 |
Ultra-thin silicon-oxide films by sputter-deposition and their application to high-quality poly-Si TFTS
|
Serikawa, T
|
|
1998
|
51 |
4 |
p. 781-783
3 p.
|
artikel
|
| 56 |
Uniform growth of compound-semiconductor film over 10inch circle by controlling entrance effects by diffusion mixing between 3 layered flows
|
Matsumoto, Koh
|
|
1998
|
51 |
4 |
p. 699-702
4 p.
|
artikel
|
| 57 |
Uniformity improvement in dc magnetron sputtering deposition on a large area substrate
|
Seino, T
|
|
1998
|
51 |
4 |
p. 791-793
3 p.
|
artikel
|
| 58 |
ZnTe epitaxial growth by remote plasma enhanced metal organic chemical vapor deposition
|
Noda, Daiji
|
|
1998
|
51 |
4 |
p. 619-622
4 p.
|
artikel
|
Tijdschrift beschrijving