| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adsorption and desorption of O[2]on Ag surfaces
|
Valbusa, U
|
|
1998
|
50 |
3-4 |
p. 445-450
6 p.
|
artikel
|
| 2 |
Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions
|
Horváth, Zs J
|
|
1998
|
50 |
3-4 |
p. 417-419
3 p.
|
artikel
|
| 3 |
Application of quadrupole mass spectrometer for the analysis of near-surface gas composition during DC sensor-tests
|
Bene, R
|
|
1998
|
50 |
3-4 |
p. 331-337
7 p.
|
artikel
|
| 4 |
Atomic hydrogen density along a continuously pumped glass tube
|
Mozetiča , M
|
|
1998
|
50 |
3-4 |
p. 319-322
4 p.
|
artikel
|
| 5 |
Atom probe study of the segregation behaviour of molybdenum-rhenium alloys
|
Dolezal, MC
|
|
1998
|
50 |
3-4 |
p. 323-325
3 p.
|
artikel
|
| 6 |
Background of the titanium nitride deposition
|
Szikora, B
|
|
1998
|
50 |
3-4 |
p. 273-276
4 p.
|
artikel
|
| 7 |
Backside aluminisation effects on solar cell performance
|
Makaró, Zs
|
|
1998
|
50 |
3-4 |
p. 481-485
5 p.
|
artikel
|
| 8 |
Cantilever flexure, adhesive\attractive and lateral force measurements on highly-oriented pyrolytic graphite by scanning force microscopy
|
Mechler, Á
|
|
1998
|
50 |
3-4 |
p. 281-287
7 p.
|
artikel
|
| 9 |
Comparative study of I-V characteristics of the ICB deposited Ag\n-Si(111) and Ag\p-Si(100) Schottky junctions
|
Cvikl, B
|
|
1998
|
50 |
3-4 |
p. 385-393
9 p.
|
artikel
|
| 10 |
Comparison of AES and EXAFS analysis of a thin Cux Aly layer on Al substrate
|
Mozetič, M
|
|
1998
|
50 |
3-4 |
p. 299-304
6 p.
|
artikel
|
| 11 |
Computer simulation of semicontinuous and continuous metal film morphologyfn2 fn2 Due to circumstances beyond the Publisher’s control, this article appears in print without author corrections.
|
Hrach, R
|
|
1998
|
50 |
3-4 |
p. 289-292
4 p.
|
artikel
|
| 12 |
Determination of Debye–Waller factors from elastic diffraction peaks of thermal energy atomic scattering from solid surfaces
|
Varga, Gábor
|
|
1998
|
50 |
3-4 |
p. 339-342
4 p.
|
artikel
|
| 13 |
Editorial
|
|
|
1998
|
50 |
3-4 |
p. 243-
1 p.
|
artikel
|
| 14 |
Effect of surface topography on scanning RBS microbeam measurements
|
Simon, A
|
|
1998
|
50 |
3-4 |
p. 503-506
4 p.
|
artikel
|
| 15 |
Electrical and structural characterisation of Ni\Ge\ n-GaAs interface
|
David, L
|
|
1998
|
50 |
3-4 |
p. 395-398
4 p.
|
artikel
|
| 16 |
Evaluation of the volatile organic contents in aqueous samples by MI-QMS technique
|
Ristoiu, D
|
|
1998
|
50 |
3-4 |
p. 359-362
4 p.
|
artikel
|
| 17 |
Grazing irradiation of porous silicon by 500 keV He ions
|
Manuaba, A
|
|
1998
|
50 |
3-4 |
p. 349-351
3 p.
|
artikel
|
| 18 |
Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry
|
Petrik, P
|
|
1998
|
50 |
3-4 |
p. 293-297
5 p.
|
artikel
|
| 19 |
Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
|
Lohner, T
|
|
1998
|
50 |
3-4 |
p. 487-490
4 p.
|
artikel
|
| 20 |
Kinetics of reactions in CH4\N2 afterglow plasma : a simplified model
|
Legrand, J-C
|
|
1998
|
50 |
3-4 |
p. 491-495
5 p.
|
artikel
|
| 21 |
Laser direct writing of tin oxide patterns
|
Szörényi, T
|
|
1998
|
50 |
3-4 |
p. 327-329
3 p.
|
artikel
|
| 22 |
Low-pressure magnetron sputtering
|
Musil, J
|
|
1998
|
50 |
3-4 |
p. 363-372
10 p.
|
artikel
|
| 23 |
Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted silicon
|
Mohácsy, T
|
|
1998
|
50 |
3-4 |
p. 399-401
3 p.
|
artikel
|
| 24 |
Multiple-angle-of-incidence ellipsometry for GaAs\GaPAs superlattices
|
Dmitruk, NL
|
|
1998
|
50 |
3-4 |
p. 425-430
6 p.
|
artikel
|
| 25 |
Nanocrystalline hard coatings within the quasi-binary system TiN–TiB2
|
Mitterer, C
|
|
1998
|
50 |
3-4 |
p. 313-318
6 p.
|
artikel
|
| 26 |
Numerical calculation of pulsed laser deposited film profiles
|
Kántor, Z
|
|
1998
|
50 |
3-4 |
p. 421-424
4 p.
|
artikel
|
| 27 |
Optical and electronic characterization of transition layer in thin film Au-GaAs Schottky barrier
|
Dmitruk, NL
|
|
1998
|
50 |
3-4 |
p. 439-443
5 p.
|
artikel
|
| 28 |
Outgassing of thin wall stainless steel chamber
|
Nemanič, V
|
|
1998
|
50 |
3-4 |
p. 431-437
7 p.
|
artikel
|
| 29 |
Photoemission study of ultra-thin vanadium films on Cu(100)
|
Pervan, P
|
|
1998
|
50 |
3-4 |
p. 245-249
5 p.
|
artikel
|
| 30 |
Photostructural transformations in amorphous chalkogenide nanolayered films produced by thermal vapour deposition
|
Imre, A
|
|
1998
|
50 |
3-4 |
p. 507-509
3 p.
|
artikel
|
| 31 |
Plasma diagnostics measurements on the new ECR heavy ion source of ATOMKI
|
Takács, E
|
|
1998
|
50 |
3-4 |
p. 353-357
5 p.
|
artikel
|
| 32 |
Pore structure investigations in porous silicon by ion beam analytical methods
|
Pászti, F
|
|
1998
|
50 |
3-4 |
p. 451-462
12 p.
|
artikel
|
| 33 |
Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability
|
Hotový, I
|
|
1998
|
50 |
3-4 |
p. 403-406
4 p.
|
artikel
|
| 34 |
Resolution correction in EELS
|
Tóth, J
|
|
1998
|
50 |
3-4 |
p. 473-479
7 p.
|
artikel
|
| 35 |
RF susceptibility of magnetron sputtered YBa[2]Cu[3]O[7]−x films
|
Lindenmájer, J
|
|
1998
|
50 |
3-4 |
p. 413-416
4 p.
|
artikel
|
| 36 |
Scanning probe microscopy investigation of nanometer structures produced by irradiation with 200 MeV ions
|
Biró, LP
|
|
1998
|
50 |
3-4 |
p. 263-272
10 p.
|
artikel
|
| 37 |
Schottky barrier height dependence on the silicon interlayer thickness of Au\Si\n-GaAs contacts : chemistry of interface formation study
|
Ivančo, J
|
|
1998
|
50 |
3-4 |
p. 407-411
5 p.
|
artikel
|
| 38 |
Surface investigations on annealed and boron implanted Fe80Mo7B12Cu1 amorphous ribbons
|
Daróczi, Cs S
|
|
1998
|
50 |
3-4 |
p. 343-347
5 p.
|
artikel
|
| 39 |
Texture and secondary extinction measurements in Al\Ti stratified films by X-ray diffraction
|
Tomov, I
|
|
1998
|
50 |
3-4 |
p. 497-502
6 p.
|
artikel
|
| 40 |
The effect of fringing field on the transmission of the prefiltered quadrupole mass spectrometers
|
Simon, M
|
|
1998
|
50 |
3-4 |
p. 305-311
7 p.
|
artikel
|
| 41 |
Thermal stability of amorphous and crystalline multilayers produced by magnetron sputtering
|
Beke, DL
|
|
1998
|
50 |
3-4 |
p. 373-383
11 p.
|
artikel
|
| 42 |
The use of artificial intelligence techniques in a catalytic probe modeling
|
Drobnič, Matija
|
|
1998
|
50 |
3-4 |
p. 277-280
4 p.
|
artikel
|
| 43 |
Thin films in biosensors
|
Tvarozek, Vladimir
|
|
1998
|
50 |
3-4 |
p. 251-262
12 p.
|
artikel
|
| 44 |
Wide band-gap II–VI compounds—can efficient doping be achieved?
|
Desnica, Uros̆ V
|
|
1998
|
50 |
3-4 |
p. 463-471
9 p.
|
artikel
|
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