| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive SIMS study of high-Tc superconductors
|
Chenakin, S.P.
|
|
1991
|
42 |
1-2 |
p. 139-142
4 p.
|
artikel
|
| 2 |
A low working pressure magnetron sputtering source
|
Kostadinov, L
|
|
1991
|
42 |
1-2 |
p. 35-37
3 p.
|
artikel
|
| 3 |
Angular and energy dependencies of secondary ion emission from polycrystalline and single-crystal surfaces
|
Kosyachkov, A.A.
|
|
1991
|
42 |
1-2 |
p. 143-145
3 p.
|
artikel
|
| 4 |
Aperture effect in plasma etching of deep silicon trenches
|
Abachev, M.K.
|
|
1991
|
42 |
1-2 |
p. 129-131
3 p.
|
artikel
|
| 5 |
Atomic layer epitaxy—12 years later
|
Herman, Marian A.
|
|
1991
|
42 |
1-2 |
p. 61-66
6 p.
|
artikel
|
| 6 |
Auger electron spectroscopic analysis of In x Ga 1−x As
|
Spassov, G.S.
|
|
1991
|
42 |
1-2 |
p. 155-158
4 p.
|
artikel
|
| 7 |
Author index of articles
|
|
|
1991
|
42 |
1-2 |
p. 175-176
2 p.
|
artikel
|
| 8 |
Boron nitride film formation by means of dynamic mixing method
|
Fujimoto, Fuminori
|
|
1991
|
42 |
1-2 |
p. 67-72
6 p.
|
artikel
|
| 9 |
Buried Si3N4 layers in silicon produced by high-intensity implantation and rapid thermal annealing
|
Gribkovskii, R.V.
|
|
1991
|
42 |
1-2 |
p. 111-112
2 p.
|
artikel
|
| 10 |
Calculation of the depth profiles associated with high energy ion implication
|
Burenkov, AF
|
|
1991
|
42 |
1-2 |
p. 13-15
3 p.
|
artikel
|
| 11 |
Computer simulation of hillock growth
|
Müller-Pfeiffer, S.
|
|
1991
|
42 |
1-2 |
p. 113-116
4 p.
|
artikel
|
| 12 |
Dependence of collisional mixing on recoil energy
|
Hautala, M
|
|
1991
|
42 |
1-2 |
p. 3-7
5 p.
|
artikel
|
| 13 |
Deposition of copper oxide, titanium oxide and indium tin oxide films by reactive magnetron sputtering
|
Popov, DN
|
|
1991
|
42 |
1-2 |
p. 53-55
3 p.
|
artikel
|
| 14 |
Dry patterning through masks of organic materials
|
Tochitsky, E.I.
|
|
1991
|
42 |
1-2 |
p. 117-120
4 p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
1991
|
42 |
1-2 |
p. IFC-
1 p.
|
artikel
|
| 16 |
Effect of low-energy ion flows on the physico-mechanical properties and morphology of iron surfaces
|
Chekanov, A.L.
|
|
1991
|
42 |
1-2 |
p. 85-87
3 p.
|
artikel
|
| 17 |
Energy and angular distributions of ions backscattered from the sidewalls during the implantation into deep trenches
|
Posselt, M
|
|
1991
|
42 |
1-2 |
p. 17-19
3 p.
|
artikel
|
| 18 |
Fast atom and beam etching assisted by a flourine-containing radical flow
|
Gurbatov, Yu.B.
|
|
1991
|
42 |
1-2 |
p. 121-124
4 p.
|
artikel
|
| 19 |
Focused ion beam technology
|
Gamo, Kenji
|
|
1991
|
42 |
1-2 |
p. 89-93
5 p.
|
artikel
|
| 20 |
Incident ion energy spectrum and target sputtering rate in dc planar magnetron
|
Czekaj, D
|
|
1991
|
42 |
1-2 |
p. 43-45
3 p.
|
artikel
|
| 21 |
Introduction
|
Karpuzov, DS
|
|
1991
|
42 |
1-2 |
p. 1-
1 p.
|
artikel
|
| 22 |
Investigation of arsenic-implanted silicon by optical reflectometry
|
Stavrov, V.I.
|
|
1991
|
42 |
1-2 |
p. 107-109
3 p.
|
artikel
|
| 23 |
Low temperature gas plasma formation of thin films on the surface of a substrate via holes
|
Smirnov, B.N.
|
|
1991
|
42 |
1-2 |
p. 57-60
4 p.
|
artikel
|
| 24 |
Low voltage magnetron discharges for thin film preparation
|
Steenbeck, K
|
|
1991
|
42 |
1-2 |
p. 39-41
3 p.
|
artikel
|
| 25 |
Maskless etching of ion modified chromium films
|
Spangenberg, B.
|
|
1991
|
42 |
1-2 |
p. 125-127
3 p.
|
artikel
|
| 26 |
Modification of physico-mechanical properties of metals and metallic coatings by ion implantation
|
Radjabov, TD
|
|
1991
|
42 |
1-2 |
p. 163-168
6 p.
|
artikel
|
| 27 |
New patents
|
|
|
1991
|
42 |
1-2 |
p. 177-184
8 p.
|
artikel
|
| 28 |
Power dissipation in rf glow discharges
|
Deltchev, R
|
|
1991
|
42 |
1-2 |
p. 33-34
2 p.
|
artikel
|
| 29 |
Problems of scanning Auger electron microscopy
|
Frank, Luděk
|
|
1991
|
42 |
1-2 |
p. 147-150
4 p.
|
artikel
|
| 30 |
Pulsed ion beams for modification of metal surface properties
|
Fominskii, V.Yu.
|
|
1991
|
42 |
1-2 |
p. 73-74
2 p.
|
artikel
|
| 31 |
Quantitative Auger electron spectroscopic analysis of titanium nitrides
|
Vignes, J.L.
|
|
1991
|
42 |
1-2 |
p. 151-153
3 p.
|
artikel
|
| 32 |
Range profile calculations by direct numerical solution of linearized Boltzmann transport equations
|
Posselt, M
|
|
1991
|
42 |
1-2 |
p. 9-12
4 p.
|
artikel
|
| 33 |
Self-annealing in ion-implanted Si and GaAs
|
Komarov, F.F.
|
|
1991
|
42 |
1-2 |
p. 101-106
6 p.
|
artikel
|
| 34 |
Shadow electron beam 1:1 scale printing with 0.1 ωm size elements
|
Makhmutov, R.Kh.
|
|
1991
|
42 |
1-2 |
p. 133-137
5 p.
|
artikel
|
| 35 |
Sources of high power ion beams for technological applications
|
Isakov, I.F.
|
|
1991
|
42 |
1-2 |
p. 159-162
4 p.
|
artikel
|
| 36 |
Structural transformations and long-range effects in alloys caused by gas ion bombardment
|
Kreindel, Yu.E.
|
|
1991
|
42 |
1-2 |
p. 81-83
3 p.
|
artikel
|
| 37 |
Structure and emission characteristics of AuSi alloy field ion source
|
Drandarov, N.
|
|
1991
|
42 |
1-2 |
p. 95-99
5 p.
|
artikel
|
| 38 |
Study of alloy phase formation using ion beams
|
Liu, B.X.
|
|
1991
|
42 |
1-2 |
p. 75-79
5 p.
|
artikel
|
| 39 |
Temperature dependence of secondary ion emission for yttrium iron garnet
|
Ilyinsky, L
|
|
1991
|
42 |
1-2 |
p. 173-
1 p.
|
artikel
|
| 40 |
The determination of species distribution and deduction of mixing and effective diffusion parameters in the altered layer of irradiated films
|
Nobes, MJ
|
|
1991
|
42 |
1-2 |
p. 21-27
7 p.
|
artikel
|
| 41 |
Theoretical analysis of heat flow and structural changes during electron beam irradiation of steel
|
Petrov, P
|
|
1991
|
42 |
1-2 |
p. 29-32
4 p.
|
artikel
|
| 42 |
Theoretical concepts ofion implementation,recoil implantation and ion bean mixing
|
Littmark, U
|
|
1991
|
42 |
1-2 |
p. 169-171
3 p.
|
artikel
|
| 43 |
The preparation of thin films by physical vapour depositions
|
Reichelt, K
|
|
1991
|
42 |
1-2 |
p. 171-173
3 p.
|
artikel
|
| 44 |
The sputter deposition process: a Monte-Carlo study
|
Heberlein, Thomas
|
|
1991
|
42 |
1-2 |
p. 47-51
5 p.
|
artikel
|
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