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                             62 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated-ion beam doping during Si growth by molecular beam epitaxy and ion-enhanced In film deposition using a low-energy (40–300 eV) In ion source 1986
 36 11-12 p. 1017-1018
2 p.
 artikel
2 AIN: a solid Al+ ion source Pelletier, J
 1986
 36 11-12 p. 977-980
4 p.
 artikel
3 A new approach to ion implanter mass analysis optics Aitken, D
 1986
 36 11-12 p. 953-960
8 p.
 artikel
4 Argon ion bombardment induced mixing in CoSi: interfacial oxide effects Collins, RA
 1986
 36 11-12 p. 821-824
4 p.
 artikel
5 Atomic mixing of Sb and Si 1986
 36 11-12 p. 1019-
1 p.
 artikel
6 Author index of articles 1986
 36 11-12 p. 1023-1024
2 p.
 artikel
7 Characterization of a 3 cm Kaufman ion source with nitrogen feed gas Van Vechten, D
 1986
 36 11-12 p. 841-845
5 p.
 artikel
8 Characterization of defects due to low voltage thin film sputter deposition by means of the MIS junction Keppner, H
 1986
 36 11-12 p. 905-907
3 p.
 artikel
9 Current-voltage curves in liquid metal ion sources Mair, GLR
 1986
 36 11-12 p. 847-850
4 p.
 artikel
10 Depth profiles of cutlery steel by SIMS 1986
 36 11-12 p. 1020-
1 p.
 artikel
11 Direct formation of dielectric thin films on silicon by low energy ion beam bombardment Todorov, SS
 1986
 36 11-12 p. 929-932
4 p.
 artikel
12 Directly heated LaB6 cathodes for ion source operation Leung, KN
 1986
 36 11-12 p. 865-867
3 p.
 artikel
13 Dry etching of indium phosphide Doughty, GF
 1986
 36 11-12 p. 803-806
4 p.
 artikel
14 Editorial: Software survey section 1986
 36 11-12 p. I-IV
nvt p.
 artikel
15 Electrostatic reflex plasma source as a plasma bridge neutralizer Lejeune, C
 1986
 36 11-12 p. 857-860
4 p.
 artikel
16 Etching of SiO2 in SF6 plasmas: the role of ions and electrons in etching mechanisms Petit, B
 1986
 36 11-12 p. 799-802
4 p.
 artikel
17 Extension of 400 keV proton beam facility for the characterisation of superlattices 1986
 36 11-12 p. 1020-
1 p.
 artikel
18 Focused ion beam milling Watkins, R.E.J.
 1986
 36 11-12 p. 961-967
7 p.
 artikel
19 Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesis Reeson, KJ
 1986
 36 11-12 p. 891-895
5 p.
 artikel
20 Heavy ion radio frequency quadrupole (RFQ) accelerators, a new tool for ion implantation Angert, N
 1986
 36 11-12 p. 969-972
4 p.
 artikel
21 High accuracy ion optics computing Amos, R.J.
 1986
 36 11-12 p. 945-952
8 p.
 artikel
22 Impregnated-electrode-type liquid metal ion source Ishikawa, J
 1986
 36 11-12 p. 825-831
7 p.
 artikel
23 Interaction of ion beams with polymers, with particular reference to SIMS Briggs, D
 1986
 36 11-12 p. 1005-1010
6 p.
 artikel
24 Introduction Palmer, D.W.
 1986
 36 11-12 p. 767-
1 p.
 artikel
25 Ion-beam assisted etching of semiconductors Zalm, PC
 1986
 36 11-12 p. 787-797
11 p.
 artikel
26 Ion beam synthesis of thin buried layers of SiO2 in silicon Hemment, PLF
 1986
 36 11-12 p. 877-881
5 p.
 artikel
27 Ion implantation and ion assisted coating of metals Dearnaley, G
 1986
 36 11-12 p. 807-811
5 p.
 artikel
28 Ion source for spacecraft potential control 1986
 36 11-12 p. 1019-
1 p.
 artikel
29 Ion-surface interactions in the study of dry etching 1986
 36 11-12 p. 1021-
1 p.
 artikel
30 Laser excitation of ion beams Hallin, Reinhold
 1986
 36 11-12 p. 939-944
6 p.
 artikel
31 Loss of depth resolution with depth in secondary ion mass spectrometry (SIMS) due to variations in ion dose density across the rastered area McPhail, DS
 1986
 36 11-12 p. 997-1000
4 p.
 artikel
32 Low-energy hydrogen implantation for silicon Schottky barrier modification Ashok, S
 1986
 36 11-12 p. 917-920
4 p.
 artikel
33 Microstructure of silicon-on-insulator structures produced by high dose nitrogen implantation of silicon Meekison, CD
 1986
 36 11-12 p. 925-928
4 p.
 artikel
34 Neutral and ion beam SIMS of non-conducting materials Van den Berg, JA
 1986
 36 11-12 p. 981-989
9 p.
 artikel
35 Neutral and ionized alkaline metal bombardment type heavy negative ion source (NIABNIS) Ishikawa, J
 1986
 36 11-12 p. 887-890
4 p.
 artikel
36 New facility for simultaneous implantation and evaporation du Marchie van Voorthuysen, EH
 1986
 36 11-12 p. 781-785
5 p.
 artikel
37 Operational characteristic of a compact microwave ion source Walther, SR
 1986
 36 11-12 p. 869-871
3 p.
 artikel
38 Oxidation resistance and optical reflectivity of Al-implanted 304 stainless steel Lin, W-L
 1986
 36 11-12 p. 901-903
3 p.
 artikel
39 Plasma parameter measurements in a tandem multipole hydrogen plasma Hopkins, MB
 1986
 36 11-12 p. 873-876
4 p.
 artikel
40 Production of thin films with use of a cylindrical low energy ion gun Depauw, JM
 1986
 36 11-12 p. 777-780
4 p.
 artikel
41 Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation Skorupa, W
 1986
 36 11-12 p. 933-937
5 p.
 artikel
42 Property modification and syntheses by low energy particle bombardment concurrent with film growth 1986
 36 11-12 p. 1019-
1 p.
 artikel
43 Quantitative SIMS measurements of Al(x)Ga(1−x)As as a function of alloy composition and ion beam energy Clark, EA
 1986
 36 11-12 p. 861-863
3 p.
 artikel
44 Rapid automatic compensation for charging effects during the SIMS depth profiling of semiconductors Dowsett, MG
 1986
 36 11-12 p. 913-916
4 p.
 artikel
45 Rare gas incorporation in ion beam sputtering deposited Si films 1986
 36 11-12 p. 1020-
1 p.
 artikel
46 Recent results with a high-current, heavy-ion source system Keller, R
 1986
 36 11-12 p. 833-835
3 p.
 artikel
47 Rf-broad-beam ion source for reactive sputtering Lossy, R
 1986
 36 11-12 p. 973-976
4 p.
 artikel
48 Rf multipolar plasma for broad and reactive ion beams Lejeune, C
 1986
 36 11-12 p. 837-840
4 p.
 artikel
49 Several mini ion sources Zhizhong, Song
 1986
 36 11-12 p. 897-899
3 p.
 artikel
50 SIMS analysis of GaAs/GaAIAs superlattice including sub-monolayer grown by MBE Sykes, DE
 1986
 36 11-12 p. 1011-1015
5 p.
 artikel
51 SIMS analysis of isotopic impurities in ion implants Sykes, DE
 1986
 36 11-12 p. 1001-1003
3 p.
 artikel
52 The contribution of SIMS to the characterization of III–V semiconductor layers grown by molecular beam epitaxy Spiller, GDT
 1986
 36 11-12 p. 991-995
5 p.
 artikel
53 The depth of disorder generation in low energy Ar+ ion implanted Si 1986
 36 11-12 p. 1019-
1 p.
 artikel
54 The first observation of RHEED intensity oscillation during the growth of a metal-metal multilayered film by MBE and the electrical resistivity measurement of Mo/Al multilayered films grown by rf sputtering Doyama, M
 1986
 36 11-12 p. 909-911
3 p.
 artikel
55 The formation of buried oxide layers by ion implantation Woods, TA
 1986
 36 11-12 p. 883-885
3 p.
 artikel
56 The mechanism for activating tin implants in GaAs Bensalem, R
 1986
 36 11-12 p. 921-923
3 p.
 artikel
57 The physics of liquid metal field-ion source 1986
 36 11-12 p. 1020-
1 p.
 artikel
58 The use of ion beams in thin film deposition Armour, DG
 1986
 36 11-12 p. 769-775
7 p.
 artikel
59 The use of microfocussed ion beams for small area depth profiles 1986
 36 11-12 p. 1021-
1 p.
 artikel
60 Triplasmatron sources for broad and reactive ion beams Lejeune, C
 1986
 36 11-12 p. 851-855
5 p.
 artikel
61 Wear behaviour of ion implanted steel surfaces Dienel, G
 1986
 36 11-12 p. 813-815
3 p.
 artikel
62 XPS studies at various depths of low energy N2 + ions implanted on 304 stainless steel Prabhawalkar, PD
 1986
 36 11-12 p. 817-820
4 p.
 artikel
                             62 gevonden resultaten
 
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