| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high vacuum gauge expansion calibration system with a selective getter pump. (GB)
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1981
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31 |
6 |
p. 272-
1 p.
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artikel
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| 2 |
Aluminosilicate-composite type ion source of alkali ions. (USA)
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1981
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31 |
6 |
p. 278-
1 p.
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artikel
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| 3 |
An electrically efficient, finely tunable, low-power plasma generator. (GB)
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1981
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31 |
6 |
p. 274-
1 p.
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artikel
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| 4 |
A new simple universal leak-detector with air-cooled turbo-pump. (West Germany)
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1981
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31 |
6 |
p. 273-
1 p.
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artikel
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| 5 |
Announcements
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1981
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31 |
6 |
p. 282-
1 p.
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artikel
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| 6 |
An optical thin film thickness monitor. (GB)
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1981
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31 |
6 |
p. 273-
1 p.
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artikel
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| 7 |
Application of ion etching to the study of dental restorative materials. (GB)
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1981
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31 |
6 |
p. 276-
1 p.
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artikel
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| 8 |
A pressure transmission system for flow resistance measurements in a rotating tube. (GB)
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1981
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31 |
6 |
p. 272-
1 p.
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artikel
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| 9 |
Arc augmented laser processing of materials. (USA)
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1981
|
31 |
6 |
p. 277-
1 p.
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artikel
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| 10 |
A spherical high-pressure ionization gauge. (GB)
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1981
|
31 |
6 |
p. 272-
1 p.
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artikel
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| 11 |
A study of electron penetration in solids using a direct Monte Carlo approach. (USA)
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1981
|
31 |
6 |
p. 277-278
2 p.
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artikel
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| 12 |
Axial electron density and wave power distributions along a plasma column sustained by the propagation of a surface microwave. (USA)
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1981
|
31 |
6 |
p. 274-275
2 p.
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artikel
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| 13 |
Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn. (USA)
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1981
|
31 |
6 |
p. 277-
1 p.
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artikel
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| 14 |
Channeled-proton-induced X-ray measurements of radiation damage in sapphire. (USA)
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1981
|
31 |
6 |
p. 279-
1 p.
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artikel
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| 15 |
Coherence characteristics of a single-mode GaAIAs laser diode. (USA)
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1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
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| 16 |
Comparison of two high-repetition-rate pulsed CO2 laser discharge geometries. (USA)
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1981
|
31 |
6 |
p. 272-
1 p.
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artikel
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| 17 |
Controlled growth of arsenic trisulphide films for coupling integrated optical devices. (GB)
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1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 18 |
Correction of the distorted electron beam spot deflected by electrostatic crossed deflection fields. (GB)
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1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 19 |
Cross section and thermonuclear reaction rates for the 58Ni(p,y)59 Cu reaction. (Canada)
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1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 20 |
Deflection errors due to sample potential in electron beam lithography machine. (GB)
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1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 21 |
Demonstration of laser action and superfluorescence in CF4 optically pumped by a continuously tunable CO, laser. (GB)
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1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
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| 22 |
Design and development of the coaxial duoPIGatron ion source. (USA)
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1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 23 |
Design and operational characteristics of a compact relativistic electron beam generator for the excitation of short wavelength lasers. (USA) (Japan)
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1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 24 |
Detecting leaks in small parts. (West Germany)
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|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 25 |
Differences in nickel-aluminium films prepared by different evaporation methods
|
Johansson, BO
|
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1981
|
31 |
6 |
p. 247-252
6 p.
|
artikel
|
| 26 |
Diffusion of gallium in silicon. (USA)
|
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|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 27 |
Dopant segregation in polycrystalline silicon. (USA)
|
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1981
|
31 |
6 |
p. 277-
1 p.
|
artikel
|
| 28 |
Doppler shift spectroscopy of powerful neutral beams. (USA)
|
|
|
1981
|
31 |
6 |
p. 278-279
2 p.
|
artikel
|
| 29 |
Dual implantation of Ga and Ge into GaAs. (USA)
|
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1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 30 |
Effective path length corrections in beam-beam scattering experiments. (GB)
|
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1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 31 |
Effect of laser spot size on energy balance in laser induced plasmas. (USA)
|
|
|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 32 |
Effects of ion implantation on the temperature coefficient of bubble collapse field in magnetic bubble garnet materials. (USA)
|
|
|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 33 |
Eighth International Vacuum Congress and Surface Science Conference
|
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1981
|
31 |
6 |
p. 241-
1 p.
|
artikel
|
| 34 |
Electrical characteristics of the graphite arc in argon flow. (GB)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 35 |
Electron swarm parameters in helium and neon. (GB)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 36 |
Energy losses due (o an ion-acoustic wave instability in a plasma. (USA)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 37 |
Formation and destruction of molecular ions in a Townsend discharge in neon. (USA)
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1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 38 |
Gas dynamics at low pressures in a vacuum microbalance. (GB)
|
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1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 39 |
Glow discharge mass spectrometry of silicon dc sputtering in argon-hydrogen. (GB)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 40 |
Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex films
|
Cadien, KC
|
|
1981
|
31 |
6 |
p. 253-258
6 p.
|
artikel
|
| 41 |
High frequency Faraday cup array. (USA)
|
|
|
1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 42 |
Improved spherical electrical feedthroughs for high pressure, nonambient temperature vessels. (USA)
|
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|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 43 |
Influence of oxygen adsorption on perpendicular anisolropy in amorphous Gd-Fe and Gd Co films. (USA)
|
|
|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 44 |
Ion distribution in laser produced plasma on tantalum surfaces at low irradiances. (GB)
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1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 45 |
La-Mo emitters in hollow cathodes. (USA)
|
|
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1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 46 |
Laser excitation and ionization of dense atomic vapors. (USA)
|
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1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 47 |
Laser glazing of sprayed metal coalings. (USA)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 48 |
Laser-induced optogalvanic effects under prebreakdown conditions in neon. (GB)
|
|
|
1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 49 |
Laser oscillator and parametric oscillator under external injection. (USA)
|
|
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1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 50 |
Laser-target interaction near the plasma-formation threshold. (USA)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 51 |
Level population densities and line intensities in helium discharges at intermediate pressures. (GB)
|
|
|
1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 52 |
Low energy ion scattering (LEIS) and the compositional and structural analysis of solid surfaces. Part I
|
Van den Berg, JA
|
|
1981
|
31 |
6 |
p. 259-270
12 p.
|
artikel
|
| 53 |
Mechanisms of radical production in radiofrequency discharges of Cf3Cl, CF3Br, and certain other plasma etchants: spectrum of a transient species. (USA)
|
|
|
1981
|
31 |
6 |
p. 277-
1 p.
|
artikel
|
| 54 |
Method of measuring low pressures within evacuated sealed glass tubes. (USA)
|
|
|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 55 |
Microstructure and normal grain growth in metals and ceramics. Part II. Experiment. (USA)
|
|
|
1981
|
31 |
6 |
p. 277-
1 p.
|
artikel
|
| 56 |
Microstructure and normal grain growth in metals and ceramics. Part I. Theory. (USA)
|
|
|
1981
|
31 |
6 |
p. 277-
1 p.
|
artikel
|
| 57 |
Monte Carlo calculations for free molecular and near-free molecular flow through axially symmetric tubes
|
Füstöss, L
|
|
1981
|
31 |
6 |
p. 243-246
4 p.
|
artikel
|
| 58 |
Multiphoton fragmentation and ionization. (USA)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 59 |
Normal emission photoelectron diffraction studies at Stanford Synchrotron Radiation Laboratory. (USA)
|
|
|
1981
|
31 |
6 |
p. 279-
1 p.
|
artikel
|
| 60 |
Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effects. (USA)
|
|
|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 61 |
On constant molecular gas flow through cylindrical lubes. A note concerning the information content of Clausing's equations. (GB)
|
|
|
1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 62 |
On steady non-Newtonian flow with suction past an infinite porous flat plate, (GB)
|
|
|
1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 63 |
On the role of self-interstitials in impurity diffusion in silicon. (USA)
|
|
|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 64 |
Partition of the positive glow corona at a point into two patches emitting alternately. (GB)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 65 |
Population inversion in a stationary recombining plasma. (USA)
|
|
|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 66 |
Quantitative thermal desorplion spectrometry of ionically implanted inert gases—II. Technical requirements. (GB)
|
|
|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 67 |
Quantitative thermal desorption spectrometry of ionically implanted inert gases—I. Fundamental aspects. (GB)
|
|
|
1981
|
31 |
6 |
p. 275-276
2 p.
|
artikel
|
| 68 |
Radio frequency sputtering equipment: design considerations for the disc and annulus system. (GB)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 69 |
Resistive stabilisation of a discharge-excited XeCI * laser. (GB)
|
|
|
1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 70 |
Semiconducting behaviour in Bi60Sb40 alloy thin films. (GB)
|
|
|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 71 |
Silicon-ion implantation in InP and annealing with CVD SiO2 encapsulation. (USA)
|
|
|
1981
|
31 |
6 |
p. 276-
1 p.
|
artikel
|
| 72 |
Special coupling and sealing devices for vacuum components. (GB)
|
|
|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 73 |
Substrate thickness considerations in electron beam lithography. (USA)
|
|
|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 74 |
Temperature limitation of a saddle field ion source. (GB)
|
|
|
1981
|
31 |
6 |
p. 278-
1 p.
|
artikel
|
| 75 |
The construction of small planar magnetrons for sputtering use. (GB)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 76 |
The effect of the cold water pressure test on the leakage detection with test gases on a test heat exchanger. (West Germany)
|
|
|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 77 |
The influence of surface properties on minority carrier lifetime and sheet conductance in semiconductors. (GB)
|
|
|
1981
|
31 |
6 |
p. 279-
1 p.
|
artikel
|
| 78 |
The Monte Carlo method in physical electronics and thin film physics. (GB)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 79 |
The nature of the positive ion contribution to a gas discharge. (GB)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 80 |
The New Editorial Management Board
|
|
|
1981
|
31 |
6 |
p. 237-239
3 p.
|
artikel
|
| 81 |
Theoretical efficiency of back-scattered electrons in secondary electron emission from aluminium. (GB)
|
|
|
1981
|
31 |
6 |
p. 279-
1 p.
|
artikel
|
| 82 |
Theoretical gain optimization studies in Co2-N2 lasers. III. Inclusion of line shape effects. (USA)
|
|
|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 83 |
Thermal blooming of continuous wave laser radiation. (GB)
|
|
|
1981
|
31 |
6 |
p. 271-
1 p.
|
artikel
|
| 84 |
The transport parameters of an electron swarm in nitrogen at elevated E/N (GB)
|
|
|
1981
|
31 |
6 |
p. 275-
1 p.
|
artikel
|
| 85 |
The two scattering energies in a single collision. (GB)
|
|
|
1981
|
31 |
6 |
p. 279-
1 p.
|
artikel
|
| 86 |
Thickness dependence of resistivity in In-Bi thin films. (GB)
|
|
|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 87 |
Tilt angle and mask edge angle dependences of lateral spread of implanted boron ions under mask edge. (USA)
|
|
|
1981
|
31 |
6 |
p. 276-277
2 p.
|
artikel
|
| 88 |
Trace detection of N2 by KrF-laser-excited spontaneous Raman spectroscopy. (USA)
|
|
|
1981
|
31 |
6 |
p. 272-
1 p.
|
artikel
|
| 89 |
Transmission electron microscopy and Rutherford backscattering studies of different damage structures in P+ implanted Si. (USA)
|
|
|
1981
|
31 |
6 |
p. 279-
1 p.
|
artikel
|
| 90 |
Use of surface plasma waves for determination of the thickness and optical constants of thin metallic films. (UDA)
|
|
|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 91 |
Vacuum Group—Committee report 1980
|
Weston, GF
|
|
1981
|
31 |
6 |
p. 281-
1 p.
|
artikel
|
| 92 |
Velocity distribution function of ion swarm in a weakly ionised gas in a constant mean free time encounter region. (GB)
|
|
|
1981
|
31 |
6 |
p. 274-
1 p.
|
artikel
|
| 93 |
Versatile computer programme for absorbing optical thin film systems. (USA)
|
|
|
1981
|
31 |
6 |
p. 273-
1 p.
|
artikel
|
| 94 |
X-ray absorption study of vermiculite mica. (GB)
|
|
|
1981
|
31 |
6 |
p. 279-
1 p.
|
artikel
|
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