nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
550. Acceleration of laser plasma ions in a cyclotron
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
2 |
414. A compact high-power nitrogen laser
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
3 |
382. Activated adsorption of gases by ultramicroporous adsorbents
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
4 |
384. Activated adsorption of gases by ultramicroporous adsorbents (a model of adsorbent with pores of various dimensions)
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
5 |
444. A demountable variable focus X-ray tube
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
6 |
525. A device for measurement of Hall mobility in thin films during the evaporation process
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
7 |
597. A device for recording thermo-mechanical curve of polymers
|
|
|
1974 |
24 |
5 |
p. 236- 1 p. |
artikel |
8 |
390. Adsorption isotherms of wet air at 78°K on CaA zeolite regenerated at various temperatures
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
9 |
391. Adsorption of mixture of Ar and H2 at 78°K by CaA zeolite granules
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
10 |
392. Adsorption of nitrogen and argon on CaA zeolite modified by previous sorption of ammonia
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
11 |
357. Adsorption of simple particles onto a one dimensional lattice with nearest neighbour interaction
|
|
|
1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
12 |
451. Adsorption pumps
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
13 |
586. A method for determination of hydrogen in cerium hydride
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
14 |
541. A method for investigation of transversal cross section of island condensates on NaCl cleavages
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
15 |
438. A method for measurement of effective ionization cross-section at ion-atom collisions
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
16 |
476. A minimal volume gas sampling valve
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
17 |
487. Amorphous thin films
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
18 |
568. An apparatus for exoemission topographing of deformed surfaces of metals
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
19 |
579. An equipment for express neutron-activation determination of oxygen in pure materials
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
20 |
599. An equipment for measurement of hardness and microhardness at high temperatures
|
|
|
1974 |
24 |
5 |
p. 236- 1 p. |
artikel |
21 |
600. An equipment for measurement of microhardness at high temperatures
|
|
|
1974 |
24 |
5 |
p. 236- 1 p. |
artikel |
22 |
598. An equipment for measurement of the constants of elasticity and internal friction of small specimens in a broad temperature interval
|
|
|
1974 |
24 |
5 |
p. 236- 1 p. |
artikel |
23 |
432. A new efficient thermionic cathode with high emission uniformity
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
24 |
A new method of measuring air leakage into steam condensers
|
Bloomer, RN |
|
1974 |
24 |
5 |
p. 193-198 6 p. |
artikel |
25 |
514. A new method of obtaining CdxHg1−xTe thin films
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
26 |
481. Angular dependence of critical currents and transition fields of sputter-deposited superconducting films
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
27 |
385. An instrument for adsorption investigations in broad intervals of temperature and pressure
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
28 |
553. A photoionization mass spectrometer utilizing a high intensity molecular beam sampling system and synchrotron radiation
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
29 |
585. Apparatuses for investigation of strength of adhesion bond between two nonhomogeneous materials forming compositions
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
30 |
453. Application of adsorption pumps for evacuation of physical instruments
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
31 |
394. Application of ion implantation for preparation of contacts metal-semiconductor
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
32 |
602. A technique for determination of strength of welds of hard alloy-steel prepared by diffusion welding in vacuum
|
|
|
1974 |
24 |
5 |
p. 236- 1 p. |
artikel |
33 |
480. A thermally shielded atmospheric pressure standard leak calibrator
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
34 |
461. Attaining extremely low pressures by the condensation technique of pumping
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
35 |
363. Auger electron spectroscopy of silicon surfaces
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
36 |
466. Automatic mass spectrometer for deuterium analysis in dynamica regime
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
37 |
475. Automatic McLeod manometer
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
38 |
601. Automation of temperature marks at work with universal vacuum dilatometer
|
|
|
1974 |
24 |
5 |
p. 236- 1 p. |
artikel |
39 |
399. Backscattering investigations on silicon
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
40 |
Bureau of Mines approves Hastings Air-Mater
|
Teledyne, Hastings-Raydist |
|
1974 |
24 |
5 |
p. 212- 1 p. |
artikel |
41 |
400. Calculation of electronic energy losses in amorphous materials
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
42 |
569. Cathode luminescence attachment to electron probe microanalyzer
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
43 |
433. Cerenkov radiation as a source of ultraviolet radiation
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
44 |
364. Chemical equilibria in heterogeneous systems gas-solid
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
45 |
378. Chemical shift in Auger spectrum of iron at adsorption of oxygen
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
46 |
441. Coefficients of deactivation of O(1D) and O(1S) metastable atoms in a glow oxygen discharge
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
47 |
411. CO laser gas temperature
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
48 |
532. Composition and electric properties of amorphous Sb2S3 films
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
49 |
Concentration profile of phosphorus implanted in silicon
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
50 |
454. Condensation-adsorption pumping
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
51 |
449. Condensation pumping in the range of high pressures
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
52 |
458. Condensation vacuum pumps
|
|
|
1974 |
24 |
5 |
p. 225-226 2 p. |
artikel |
53 |
505. Conditions leading to the appearance of the new modification (delta-Cr) in thin vacuum evaporated chromium films. I
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
54 |
506. Conditions leading to the appearance of the new modification (delta-Cr) in thin vacuum evaporated chromium films. II
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
55 |
430. Controlled secondary electron emission in the high-energy region
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
56 |
424. Cross-section for multi-photon ionization of alkali metal atoms
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
57 |
455. Cryogenic pumps in investigations on thermonuclear synthesis
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
58 |
596. Cryostat with charging assembly for examination of materials on elongation at temperature 20°K
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
59 |
498. Crystallization in aluminium-silicon dioxide films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
60 |
492. Crystal structure of evaporated MgO films on amorphous and polycrystalline substrates
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
61 |
412. Decomposition of N2O in a glow discharge
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
62 |
393. Dependence of sorption kinetics on the degree of black of cooling surface
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
63 |
581. Determination of concentrations and temperatures of segregation of carbide phase of alloyed steels
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
64 |
372. Determination of implantation profiles in silicon
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
65 |
534. Determination of resonance ultrahigh frequency permeability of conducting ferromagnetic films
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
66 |
554. Development of an intense pulsed relativistic electron beam of large diameter and uniform flux
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
67 |
460. Development of the condensation technique of generation of vacuum at Physico-technical Institute of Academy of Sciences of USSR
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
68 |
526. Dielectric breakdown in AlSiOnAl sandwich films
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
69 |
577. Difference Auger spectroscopy for studying small quantities of elements on metallic surfaces
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
70 |
Director of low temperature research and development in Great Britain
|
|
|
1974 |
24 |
5 |
p. 212- 1 p. |
artikel |
71 |
406. Displacement mechanisms in electron-irradiated molybdenum
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
72 |
516. Distribution of impurities at film growth from gas phase
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
73 |
504. Distribution of phosphorus in epitaxial silicon films grown by chloride method
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
74 |
583. Doping of II–VI compound semiconductors by ion implantation
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
75 |
356. Electrical modelling of transient processes of gas flow in vacuum systems
|
|
|
1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
76 |
522. Electric and thermal conductivities of chromium films
|
|
|
1974 |
24 |
5 |
p. 230-231 2 p. |
artikel |
77 |
Electric motor speed control breakthrough
|
Electrical Research Association, |
|
1974 |
24 |
5 |
p. 213- 1 p. |
artikel |
78 |
545. Electrodes for superpower electro-vacuum devices with enhanced resistance to electron bombardment
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
79 |
565. Electromagnetic stigmator of an equipment for electron-beam micromachining
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
80 |
415. Electron beam and dense plasma focus interaction heating experiments
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
81 |
529. Electron diffraction investigation of formation of phases in the AgS system
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
82 |
361. Electronic and structural characteristics of ZnO (0001) surfaces
|
|
|
1974 |
24 |
5 |
p. 218-219 2 p. |
artikel |
83 |
377. Electronic stopping cross section of boron in silicon
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
84 |
488. Electronic structure of ultrathin transition and noble metal films with simple metal interfaces
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
85 |
408. Electron irradiation hardening of copper and copper alloys at 78 and 300°K
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
86 |
501. Electron microscopy of amorphous GdCo thin films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
87 |
367. Electro-physical method of determination of the diffusion coefficients of gases in metallic films
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
88 |
573. Emission electron microscopy in high-temperature investigations of metals and alloys
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
89 |
561. Emission microscopical investigation of variations in secondary electron emission at plastic deformation
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
90 |
482. Employing purge gas in a screened vacuum deposition arrangement
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
91 |
497. Energy level structure of ionized states of adenine in the solid state
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
92 |
564. Equipment for electron-beam micromachining
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
93 |
509. Equipment for the preparation of thin carbon foils and replicas
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
94 |
ESSDERC 1974
|
|
|
1974 |
24 |
5 |
p. 216-217 2 p. |
artikel |
95 |
383. Experimental investigation of activated adsorption of hydrogen by ultramicroporous carbonized coal
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
96 |
Extending and continuing education non-credit programmers at University of Missouri—Rolla, USA
|
|
|
1974 |
24 |
5 |
p. 216- 1 p. |
artikel |
97 |
484. Fabrication of 104 bit permalloy-first magnetic bubble circuits on epitaxial garnet chips
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
98 |
Fail-safe vacuum valve
|
Vacuum Research Mfg Co, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
99 |
409. F-centre profiles associated with electronic stopping power in LiF bombarded with high energy ions
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
100 |
512. Features of dynamics of phase transformations in conditions of rapid condensation of thin films
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
101 |
381. Features of gas adsorption by microporous adsorbents at low filling
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
102 |
468. Features of mass spectrometric apparatus intended for measurement of partial pressures of gases in high vacuum
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
103 |
556. Field ion microscope images of DNA and other organic molecules
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
104 |
558. Flat cathode ray tubes
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
105 |
490. Fluxoid properties in superconducting films
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
106 |
588. Formation of H2Te from elements
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
107 |
447. Four models of electron distribution in the Orbitron
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
108 |
358. Gas desorption temperatures of two molecular sieves
|
|
|
1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
109 |
572. Gas-discharge chamber for neutralization of charges on samples in the electron microscope
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
110 |
428. Gas-discharge sources of electrons with near-anode plasma and their application in electron-beam technology
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
111 |
High capacity system uses Ferrofludic driven carousel
|
Ferrofluidics Corp, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
112 |
592. High frequency apparatus for investigation of fatigue of sheet materials in conditions of plane stressed state and elevated temperatures
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
113 |
420. High-pulse-rate glow-discharge stabilization by gas flow
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
114 |
462. High-throughput oil diffusion pumps
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
115 |
452. High vacuum system with cryogenic pumping at forevacuum and high vacuum stages
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
116 |
421. Holographic interferometry of exploding wires
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
117 |
584. Improvement of the technique for measurement of surface tension and density of alloys of chemically active metals
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
118 |
491. Inelastic tunneling in PbZn or ZnSoxidePb junctions
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
119 |
401. Influence of preliminary bombardment on properties of silicon at ion implantation
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
120 |
456. Influence of recondensation on generation of vacuum at utilization of cryogenic pumps
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
121 |
551. Influence of resonance charge exchange on resolution and contrast of field-ion image
|
|
|
1974 |
24 |
5 |
p. 232-233 2 p. |
artikel |
122 |
517. Influence of substrate temperature and partial pressure of PCl3 on trapping of phosphorus by epitaxial silicon film during the growth process
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
123 |
519. Influence of temperature on current passage and charge accumulation in the system InCdSIn
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
124 |
499. Influence of X-ray irradiation on a phase transition in CsCl thin films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
125 |
418. Interaction of a relativistic electron beam with a turbulent plasma
|
|
|
1974 |
24 |
5 |
p. 222-223 2 p. |
artikel |
126 |
425. Interaction of protons and hydrogen atoms with CO molecules
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
127 |
369. Investigation of distribution of concentration and evaluation of uniformity of surface distribution of phosphorus implanted in silicon
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
128 |
370. Investigation of distribution of concentrations of phosphorus and boron implanted in silicon
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
129 |
582. Investigation of electrical conductivity of CdCr2S4 compound in atmosphere containing sulphur
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
130 |
433. Investigation of electron emission from the system AlSi3N4Me
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
131 |
442. Investigation of generation spectra of CO molecule vibration levels
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
132 |
425. Investigation of hollow cathode discharge at application of magnetic fields with various configurations
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
133 |
537. Investigation of homocharge in polymer films
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
134 |
546. Investigation of mercury pulsed gas-discharge devices
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
135 |
376. Investigation of properties of doped semiconductors by the method of ion-backscattering
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
136 |
508. Investigation of radiation defects in implanted silicon films
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
137 |
402. Investigation of results of implantation of p-type single silicon crystals by phosphorus ions with energy up to 50 keV
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
138 |
595. Investigation of the method of preparation of powder standard samples by evaporation of impurity
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
139 |
368. Investigation of the process of generation of defects at ion implantation
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
140 |
502. Investigations on determination of charge carrier concentration and mobility in implanted films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
141 |
549. Ion-beam equipments for implantation of semiconductors in Nuclear Research Institute in Sverka
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
142 |
473. Ionization gauge for measurement of pressure in a broad range
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
143 |
Ion scattering spectrometer at Fulmer Research Institute
|
Fulmer Research Institute, |
|
1974 |
24 |
5 |
p. 212- 1 p. |
artikel |
144 |
562. Ion sources with strong focusing
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1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
145 |
503. Iop diffraction investigations of silicon and gold epitaxial films
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1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
146 |
362. Irradiation softening in pure iron single crystals
|
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1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
147 |
410. Kinetics of thermal decomposition of TiH2
|
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1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
148 |
548. 150 kV equipment for ion implantation
|
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1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
149 |
Latest version of the Litter Gobbler
|
Airflow International Engineering Ltd, |
|
1974 |
24 |
5 |
p. 211-212 2 p. |
artikel |
150 |
386. Layers of solidified gases—microporous sorbents
|
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|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
151 |
Leybold vacuum flanges
|
Leybold Heraeus Ltd, |
|
1974 |
24 |
5 |
p. 213- 1 p. |
artikel |
152 |
353. Light-emitting diodes and semiconductor materials for displays
|
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1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
153 |
Linde Hydraulics Ltd feature modular range
|
Linde Hydraulics Ltd, |
|
1974 |
24 |
5 |
p. 212- 1 p. |
artikel |
154 |
479. Liquid-nitrogen forevacuum trap
|
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1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
155 |
429. Low-resistance transmissive silver-oxygen-caesium photocathodes
|
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1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
156 |
387. Low-temperature adsorption of gases by ultramicroporous carbon adsorbents
|
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1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
157 |
373. Low temperature proton irradiation of single crystals of pure and impurity bismuth
|
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1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
158 |
590. Lubricant-free apparatus for measurement of kinetic isotherms with a device disconnecting the vacuum source from the mechanical pump
|
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1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
159 |
Magnetic service coupling (valve operator)
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1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
160 |
547. Mass separator in Rossendorf and technological problems of ion implantation
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1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
161 |
578. Mass spectrometer calibration under pulsed molecular flow conditions: sample inlet influences
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1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
162 |
474. Mass spectrometer with trochoidal ion beam. II
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1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
163 |
435. Mass-spectrometric investigation of ionic composition of discharge potassium and caesium plasma
|
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1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
164 |
542. Mass spectrometric investigation of the transport reaction of rare earth element with phosphorus pentachloride
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1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
165 |
431. Measurement of distribution of relative work function on surface of electrically conducting emitters
|
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1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
166 |
469. Measurement of vacuum reached by cryogenic pumping methods
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1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
167 |
470. Miniature thermoelectric vacuum gauge
|
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1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
168 |
Mini version of compression tube fittings catalogue from Enots
|
Enots Ltd, |
|
1974 |
24 |
5 |
p. 213-214 2 p. |
artikel |
169 |
510. Modulation of conductivity of island gold films at the inverse piezoeffect in substrate
|
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1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
170 |
Multi-ported ball valve range simplifies flow control schemes
|
Hoke International Ltd, |
|
1974 |
24 |
5 |
p. 209- 1 p. |
artikel |
171 |
New bulleting on matched diffusion pumps and components that virtually eliminate backstreaming
|
Varian Associates, Vacuum Division, |
|
1974 |
24 |
5 |
p. 214- 1 p. |
artikel |
172 |
New line of stainless formed vacuum bellows
|
Huntington Mechanical Laboratories, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
173 |
New literature on general purpose vacuum coater
|
Edwards High Vacuum, |
|
1974 |
24 |
5 |
p. 214- 1 p. |
artikel |
174 |
New metal breather filters
|
The Lenz Co, |
|
1974 |
24 |
5 |
p. 212- 1 p. |
artikel |
175 |
New multitarget sputtering system for production of pure thin films
|
Varian Vacuum Division, |
|
1974 |
24 |
5 |
p. 209- 1 p. |
artikel |
176 |
1974 new officers and directors of the American Vacuum Society
|
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1974 |
24 |
5 |
p. 214-215 2 p. |
artikel |
177 |
New 16 page, ferrofluid technology and applications handbook
|
Ferrofluids Corp, |
|
1974 |
24 |
5 |
p. 213- 1 p. |
artikel |
178 |
New suction and return line reservoir flanges
|
The Lenz Co, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
179 |
Oil filled pressure gauges
|
LG International, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
180 |
543. On breakdown of nonhomogeneous dielectrics in vacuum
|
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1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
181 |
404. On charging of thermally oxidized germanium surface
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1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
182 |
576. On determination of gases in hardened steel layers
|
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1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
183 |
513. On kinetics of early stages of condensation of cadmium selenide thin films
|
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1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
184 |
523. On mechanical stability of film field emission cathode in the ultrahigh frequency range
|
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1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
185 |
567. On modern methods of measurement of internal friction
|
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1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
186 |
403. On nature of surface states on atomically clean germanium and silicon surfaces
|
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1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
187 |
388. On processes determining composition of two-dimensional oxide film on molybdenum surface
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1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
188 |
405. On regularities of penetration of medium energy electron beams into solids
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1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
189 |
379. On the influence of inactive additives on sorption ability of CO2 layers at 20°K
|
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1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
190 |
563. On the influence of thermal processes in electron guns on stability of beam currents
|
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1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
191 |
355. On the method of calculation of molecular flow in effusion chamber lined with investigated substance
|
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1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
192 |
380. On the problem of cryotrapping
|
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1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
193 |
445. On the return coefficient at pumping in high vacuum
|
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1974 |
24 |
5 |
p. 224-225 2 p. |
artikel |
194 |
530. On thermodynamics of the process of preparation of CdS films by the method of gas transport reactions
|
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1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
195 |
354. On the stationary state and temperature relaxation of rarefied gas
|
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|
1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
196 |
591. On the technique of high-temperature measurements of electrotransport in melts of semiconductors
|
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1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
197 |
417. Optical diagnostics of an ECRH plasma
|
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|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
198 |
540. Oscillo-polarographic and X-ray methods of analysis of thin-film palladium-vanadium coatings
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
199 |
465. Performance of an oxide solid electrolyte as a vacuum oxygen partial pressure gauge
|
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|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
200 |
427. Phenomena of electrophoresis and cataphoresis in glow discharges in gases and vapours of metals
|
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1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
201 |
533. Photoconductivity and optical properties of crystals and films of SbSeIBiSeI
|
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1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
202 |
589. Photoelectric characteristics of alloyed junctions germanium-gallium arsenide
|
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|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
203 |
407. Photoelectric work function and Auger electron spectroscopy of 5.59 atomic per cent SiFe alloy (100) single crystals
|
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|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
204 |
544. Photoelectron multiplier with antimony-rubidium-caesium photocathode and secondary emitters
|
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|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
205 |
359. Photoionization of magnesium and copper phthalocyanine in oxygen and hydrogen
|
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1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
206 |
520. Photosensitivity of p-Cu2S — n-Si heterojunction
|
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1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
207 |
423. Plasma panels
|
|
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1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
208 |
419. Plasma-resonance scattering studies of the formation of alkali metal particles in inert gases
|
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|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
209 |
560. Possibilities of utilization of microanalysis with the aid of secondary ions in problems of semiconductors
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
210 |
Post deflection magnification (PDM) cathode ray tubes
|
Twentieth Century Electronics Ltd, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
211 |
521. Preparation and characteristics of surface-barrier detectors of p-type silicon
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
212 |
570. Preparation of cleavage of polymer and its replicas in vacuum at low temperatures
|
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|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
213 |
396. Preparation of p-n junctions in silicon carbide by lithium ion bombardment
|
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|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
214 |
574. Preparation of replicas providing diffraction contrast of image
|
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|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
215 |
472. Pressure measurement by ionization gauge head with cold cathode in various conditions of exploitation
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
216 |
557. Projection color television displays
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
217 |
535. Properties of aluminium nitride films prepared by reactive evaporation
|
|
|
1974 |
24 |
5 |
p. 231-232 2 p. |
artikel |
218 |
594. p-T-x state diagram and thermodynamic properties of In2Se3
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
219 |
434. Pumping of helium to anode at discharge in CdHe and SeHe mixtures
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
220 |
450. Pumping of large volumes from 760 torr to high vacuum by hydrogen condensation-sorption pumps
|
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|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
221 |
457. Pumping speed of clean condensation pump surface and that with layer of adsorbate
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
222 |
448. Pumping speed of sputter-ion pumps of rotational symmetry
|
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|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
223 |
416. Radial neutral gas temperature and density profiles in low-pressure argon discharges
|
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|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
224 |
398. Radiation damage in silicon caused by ion implantation and its annealing
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
225 |
580. Radiometric method of determination of thermodynamic activity of carbon in steel and alloys
|
|
|
1974 |
24 |
5 |
p. 234-235 2 p. |
artikel |
226 |
Rasterelekronenmikroskopie höchster Auflösung
|
Rüdenauer, FG |
|
1974 |
24 |
5 |
p. 199-208 10 p. |
artikel |
227 |
536. Recrystallization of chromium films at their ageing
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
228 |
587. Recrystallization of vanadium oxycarbides
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
229 |
493. rf sputtered luminescent rare-earth oxysulfide films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
230 |
555. Secondary electron emission as a technique for in situ crystal alignment in low ion-energy reflection experiments
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
231 |
552. Simple windowless lamp for ultrahigh vacuum photoemission spectroscopy
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
232 |
464. Small-size oil diffusion pump M-1000
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
233 |
463. Small-size oil diffusion pump M-60
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
234 |
485. Sputtered platinum as substrate for ferroelectric film deposition
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
235 |
Stainless steel stock
|
Metal Centres Ltd, |
|
1974 |
24 |
5 |
p. 213- 1 p. |
artikel |
236 |
467. Standard manometric equipment with measuring range 10−4 to 10−7 torr
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
237 |
Standard-package vacuum cooling systems
|
Pennwalt Ltd, |
|
1974 |
24 |
5 |
p. 211- 1 p. |
artikel |
238 |
21st national vacuum symposium
|
|
|
1974 |
24 |
5 |
p. 215-216 2 p. |
artikel |
239 |
486. Structural and electrical properties of evaporated-amorphous and vitreous-amorphous V–VI compounds
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
240 |
507. Structural investigations of thermally treated uranium dioxide thin films deposited by ion beam sputtering technique
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
241 |
371. Structural transformations and formation of compounds at ion implantation in diamond
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
242 |
518. Structure of Se films condensed in vacuum
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
243 |
489. Structures grown by molecular beam epitaxy
|
|
|
1974 |
24 |
5 |
p. 228- 1 p. |
artikel |
244 |
528. Superconducting transition of strong-coupling thin films
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
245 |
496. Superconductivity and metastable phases in thin films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
246 |
494. Superconductivity of transition metal thin films deposited by noble gas ion beam sputtering
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
247 |
397. Surface effects on silicon single crystals
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
248 |
531. Synthesis of CdTe epitaxial films
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
249 |
524. Temperature dependences of kinetic coefficients of bismuth films
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
250 |
12th conference on vacuum microbalance techniques weighing in controlled atmosphere
|
|
|
1974 |
24 |
5 |
p. 216- 1 p. |
artikel |
251 |
559. The cathode ray tube display: why use anything else?
|
|
|
1974 |
24 |
5 |
p. 233- 1 p. |
artikel |
252 |
471. The control unit of a ionization vacuum gauge with measuring limits 1.33 × 10−5 to 133 Pa
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
253 |
422. The determination of electron energy distributions at low energy
|
|
|
1974 |
24 |
5 |
p. 223- 1 p. |
artikel |
254 |
352. The first twenty years of the American Vacuum Society
|
|
|
1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
255 |
538. The influence of crystallization temperature on growth and doping of gallium arsenide autoepitaxial films. I
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
256 |
539. The influence of crystallization temperature on growth and doping of gallium arsenide autoepitaxial films. II
|
|
|
1974 |
24 |
5 |
p. 232- 1 p. |
artikel |
257 |
374. The influence of ion bombardment on the optical properties of alkali halide crystals
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
258 |
439. The influence of longitudinal magnetic field on discharge with hollow cathode
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
259 |
440. The influence of vapours of metals and their compounds on volt-ampere characteristics of discharge with noncooled hollow cathode
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
260 |
The Institute of Physics announcements vacuum and atomic collisions in solids groups
|
|
|
1974 |
24 |
5 |
p. 216- 1 p. |
artikel |
261 |
500. The Kondo effect in surface-doped thin CuFe films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
262 |
571. The method of heating samples in electron microscopes
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
263 |
575. The phenomenon of resetting of deformed germanium whiskers at annealing
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
264 |
437. Thermionic emission properties of zirconium carbide compositions with rhenium
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
265 |
515. Thin films of SiO, ZnS and MgF2 deposited with the aid of a laser
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
266 |
436. Three-wavelength holographic diagnostics of optical plasma cluster on potassium target
|
|
|
1974 |
24 |
5 |
p. 224- 1 p. |
artikel |
267 |
9th thin films conference on surfaces
|
|
|
1974 |
24 |
5 |
p. 217- 1 p. |
artikel |
268 |
Time delay relays
|
Standing Electronics Ltd, |
|
1974 |
24 |
5 |
p. 210- 1 p. |
artikel |
269 |
413. Time-resolved electron energy distribution measurements in high-current discharges
|
|
|
1974 |
24 |
5 |
p. 222- 1 p. |
artikel |
270 |
389. To the problem of regeneration of microporous carbon adsorbents
|
|
|
1974 |
24 |
5 |
p. 220- 1 p. |
artikel |
271 |
495. Tunneling studies of the formation of intermetallic compounds in gold-lead films
|
|
|
1974 |
24 |
5 |
p. 229- 1 p. |
artikel |
272 |
459. Ultrahigh vacuum bakeable cryogenic pumps with low consumption of working cooling agents
|
|
|
1974 |
24 |
5 |
p. 226- 1 p. |
artikel |
273 |
478. Ultrahigh vacuum gate valve
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
274 |
446. Ultrahigh vacuum system M 1000 A
|
|
|
1974 |
24 |
5 |
p. 225- 1 p. |
artikel |
275 |
Unique texture coating for furniture and equipment finishing
|
Ricor Ltd, |
|
1974 |
24 |
5 |
p. 211- 1 p. |
artikel |
276 |
483. Use of a differential transformer for the measurement of mechanical stresses in thin evaporated films
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
277 |
566. Utilization of an emission microscope for investigation of structure and properties of cast iron
|
|
|
1974 |
24 |
5 |
p. 234- 1 p. |
artikel |
278 |
366. Utilization of electron irradiation for local separation of non-metallic insertions
|
|
|
1974 |
24 |
5 |
p. 219- 1 p. |
artikel |
279 |
511. Utilization of low-voltage Penning discharge for preparation of thin dielectric films
|
|
|
1974 |
24 |
5 |
p. 230- 1 p. |
artikel |
280 |
Utilization of the “DADI” technique: evidence for ring contraction in 2,3-dihydrobenzoxepin
|
Varian MAT GmbH, |
|
1974 |
24 |
5 |
p. 213- 1 p. |
artikel |
281 |
395. Utilization of the method of oxidizing melting in vacuum for determination of carbon in metals and investigation of sources of contamination of tantalum foils
|
|
|
1974 |
24 |
5 |
p. 221- 1 p. |
artikel |
282 |
Vacuum/Atmosphere appoint Kontron UK agents
|
Kontron Instruments Ltd, |
|
1974 |
24 |
5 |
p. 212- 1 p. |
artikel |
283 |
477. Valve assembly for precision and rapid dosage of gases in mass spectrometers
|
|
|
1974 |
24 |
5 |
p. 227- 1 p. |
artikel |
284 |
593. Volume decoration of defects in caesium iodide crystals
|
|
|
1974 |
24 |
5 |
p. 235- 1 p. |
artikel |
285 |
527. V-VxOy-Pb Josephson tunnel junctions of high stability
|
|
|
1974 |
24 |
5 |
p. 231- 1 p. |
artikel |
286 |
360. Xenon ion ranges in copper single crystals
|
|
|
1974 |
24 |
5 |
p. 218- 1 p. |
artikel |
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375. X-ray investigation of structure of ion-doped silicon crystals
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24 |
5 |
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