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                             54 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advanced RBSOA analysis for advanced power BJTs Busatto, Giovanni
 1996
 88-90 7-8 p. 1077-1093
17 p.
 artikel
2 A methodology for microcontroller signal frequency stress prediction Hsieh, Sheng-Jen
 2005
 88-90 7-8 p. 1243-1251
9 p.
 artikel
3 An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect Ho, C.S.
 2005
 88-90 7-8 p. 1144-1149
6 p.
 artikel
4 An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode Saha, A.R.
 2005
 88-90 7-8 p. 1154-1160
7 p.
 artikel
5 Announcement 1996
 88-90 7-8 p. 1139-
1 p.
 artikel
6 A review of hot-carrier degradation mechanisms in MOSFETs Acovic, Alexander
 1996
 88-90 7-8 p. 845-869
25 p.
 artikel
7 Bipolar mechanisms present in short channel SOI-MOSFET transistors Janczyk, G.
 2005
 88-90 7-8 p. 1257-1263
7 p.
 artikel
8 Blue shift and mirror degradation in InGaAs GaAs strained quantum well lasers Serra, L.
 1996
 88-90 7-8 p. 1095-1105
11 p.
 artikel
9 Breakdown of thin gate silicon dioxide films—A review Nafría, M.
 1996
 88-90 7-8 p. 871-905
35 p.
 artikel
10 Built-in self-test and diagnostic support for safety critical microsystems Olbrich, T.
 1996
 88-90 7-8 p. 1125-1136
12 p.
 artikel
11 Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics Mizubayashi, Wataru
 2005
 88-90 7-8 p. 1041-1050
10 p.
 artikel
12 Chip-packaging interaction: a critical concern for Cu/low k packaging Wang, Guotao
 2005
 88-90 7-8 p. 1079-1093
15 p.
 artikel
13 Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf x Ti y Si z O films Paskaleva, A.
 2005
 88-90 7-8 p. 1124-1133
10 p.
 artikel
14 Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs Kelly, D.Q.
 2005
 88-90 7-8 p. 1033-1040
8 p.
 artikel
15 Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment Lin, M.H.
 2005
 88-90 7-8 p. 1061-1078
18 p.
 artikel
16 Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements Sauter, Martin
 2005
 88-90 7-8 p. 1187-1193
7 p.
 artikel
17 Development of process modeling methodology for flip chip on flex interconnections with non-conductive adhesives Zhang, Xiaowu
 2005
 88-90 7-8 p. 1215-1221
7 p.
 artikel
18 Diagnosis in submicron integrated circuits by electric force microscopy Böhm, C.
 1996
 88-90 7-8 p. 1113-1118
6 p.
 artikel
19 Diagnostics of the quality of MOSFETs Vandamme, E.P.
 1996
 88-90 7-8 p. 1107-1112
6 p.
 artikel
20 Dynamic NBTI lifetime model for inverter-like waveform Tan, Shyue Seng
 2005
 88-90 7-8 p. 1115-1118
4 p.
 artikel
21 Editorial Stojadinović, Ninoslav
 1996
 88-90 7-8 p. 843-844
2 p.
 artikel
22 Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs Estrada, M.
 2005
 88-90 7-8 p. 1161-1166
6 p.
 artikel
23 Electrical and radiation tests of thin tunnel oxides Paccagnella, A.
 1996
 88-90 7-8 p. 1033-1044
12 p.
 artikel
24 Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology Song, Y.J.
 2005
 88-90 7-8 p. 1150-1153
4 p.
 artikel
25 Electromigration failure of contacts and vias in sub-micron integrated circuit metallizations Oates, Anthony S.
 1996
 88-90 7-8 p. 925-953
29 p.
 artikel
26 Electromigration in Al based stripes: Low frequency noise measurements and MTF tests Bagnoli, P.E.
 1996
 88-90 7-8 p. 1045-1050
6 p.
 artikel
27 Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing Jacob, Peter
 2005
 88-90 7-8 p. 1174-1180
7 p.
 artikel
28 Electrostatic micromotor and its reliability Zhang, Wenming
 2005
 88-90 7-8 p. 1230-1242
13 p.
 artikel
29 ESD issues for advanced CMOS technologies Duvvury, Charvaka
 1996
 88-90 7-8 p. 907-924
18 p.
 artikel
30 Failure-analysis-based test chip design for quick yield improvement Hashimoto, Chisato
 1996
 88-90 7-8 p. 1063-1075
13 p.
 artikel
31 Failures induced on analog integrated circuits by conveyed electromagnetic interferences: A review Masetti, G.
 1996
 88-90 7-8 p. 955-972
18 p.
 artikel
32 High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts Lee, Yao-Jen
 2005
 88-90 7-8 p. 1119-1123
5 p.
 artikel
33 Implementation, analysis and performance evaluation of the IRP replacement policy Jaragh, Mansour
 2005
 88-90 7-8 p. 1264-1269
6 p.
 artikel
34 Improving reliability of thick film initiators for automotive applications based on FE-analyses Smetana, W.
 2005
 88-90 7-8 p. 1194-1201
8 p.
 artikel
35 Lateral punch-through TVS devices for on-chip protection in low-voltage applications Urresti, J.
 2005
 88-90 7-8 p. 1181-1186
6 p.
 artikel
36 List of reviewers 1996
 88-90 7-8 p. 1137-
1 p.
 artikel
37 Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime Aono, H.
 2005
 88-90 7-8 p. 1109-1114
6 p.
 artikel
38 Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections Vollertsen, R.-P.
 1996
 88-90 7-8 p. 1019-1031
13 p.
 artikel
39 Monolithic active pixel sensor realized in SOI technology—concept and verification Niemiec, H.
 2005
 88-90 7-8 p. 1202-1207
6 p.
 artikel
40 New encapsulation development for fine pitch IC devices Yao, Y.F.
 2005
 88-90 7-8 p. 1222-1229
8 p.
 artikel
41 [No title] Stojcev, Mile
 2005
 88-90 7-8 p. 1272-
1 p.
 artikel
42 [No title] Stojcev, Mile
 2005
 88-90 7-8 p. 1270-1271
2 p.
 artikel
43 [No title] Stojcev, Mile
 2005
 88-90 7-8 p. 1273-1274
2 p.
 artikel
44 Optimizing the hot carrier reliability of N-LDMOS transistor arrays Brisbin, Douglas
 2005
 88-90 7-8 p. 1021-1032
12 p.
 artikel
45 Plastic packages survive where hermetic packages fail Sinnadurai, Nihal
 1996
 88-90 7-8 p. 1001-1018
18 p.
 artikel
46 Process improvement of 0.13μm Cu/Low K (Black DiamondTM) dual damascene interconnection Li, H.Y.
 2005
 88-90 7-8 p. 1134-1143
10 p.
 artikel
47 Pseudomorphic HEMTs reliability with scattering and noise parameters Conti, P.
 1996
 88-90 7-8 p. 1119-1124
6 p.
 artikel
48 Reliability of erasing operation in NOR-Flash memories Chimenton, Andrea
 2005
 88-90 7-8 p. 1094-1108
15 p.
 artikel
49 Reliability of InGaAs InP based separate absorption grading multiplication avalanche photodiodes Montangero, P.
 1996
 88-90 7-8 p. 973-1000
28 p.
 artikel
50 Reliability study of new SnZnAl lead-free solders used in CSP packages Kitajima, Masayuki
 2005
 88-90 7-8 p. 1208-1214
7 p.
 artikel
51 Size effects on the DC characteristics and low frequency noise of double polysilicon NPN bipolar transistors Valdaperez, Nicolas
 2005
 88-90 7-8 p. 1167-1173
7 p.
 artikel
52 Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films Serényi, M.
 2005
 88-90 7-8 p. 1252-1256
5 p.
 artikel
53 The evolution of the microscopic damage in electromigration studied by multiple electrical measurements Jone, B.K.
 1996
 88-90 7-8 p. 1051-1062
12 p.
 artikel
54 Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs Rhee, Se Jong
 2005
 88-90 7-8 p. 1051-1060
10 p.
 artikel
                             54 gevonden resultaten
 
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