| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A case history of converting a digital voltmeter to integrated circuitry
|
|
|
1968
|
7 |
4 |
p. 346-
1 p.
|
artikel
|
| 2 |
A distributed RC Network Broadband FM Discriminator in thin-film technique
|
|
|
1968
|
7 |
4 |
p. 342-
1 p.
|
artikel
|
| 3 |
Advances in linear monolithic circuit technology
|
|
|
1968
|
7 |
4 |
p. 332-
1 p.
|
artikel
|
| 4 |
A high Q temperature insensitive inductive transistor circuit
|
|
|
1968
|
7 |
4 |
p. 334-335
2 p.
|
artikel
|
| 5 |
A monolithic integrated circuit processing laboratory for the electronics industry
|
|
|
1968
|
7 |
4 |
p. 332-
1 p.
|
artikel
|
| 6 |
A multilayered tantalum thin film structure for R-C circuitry
|
|
|
1968
|
7 |
4 |
p. 335-
1 p.
|
artikel
|
| 7 |
Anodic tantalum oxide dielectrics prepared from body-centred-cubic tantalum and beta-tantalum films
|
|
|
1968
|
7 |
4 |
p. 340-
1 p.
|
artikel
|
| 8 |
A non-polar thin-film titanium oxide capacitor
|
Lloyd, P.
|
|
1968
|
7 |
4 |
p. 329-330
2 p.
|
artikel
|
| 9 |
Application of digital integrated circuits to linear phase detection
|
|
|
1968
|
7 |
4 |
p. 347-
1 p.
|
artikel
|
| 10 |
A review of high vacuum deposition apparatus and techniques
|
|
|
1968
|
7 |
4 |
p. 339-
1 p.
|
artikel
|
| 11 |
A survey of field effect structures
|
|
|
1968
|
7 |
4 |
p. 335-
1 p.
|
artikel
|
| 12 |
A universal series of construction units for digital instruments in thin-film hybrid technique
|
|
|
1968
|
7 |
4 |
p. 346-
1 p.
|
artikel
|
| 13 |
Batch fabrication of thin film resistors for hybrid circuitry by electroless deposition of nickel phosphide
|
|
|
1968
|
7 |
4 |
p. 336-
1 p.
|
artikel
|
| 14 |
Bell jar protection in vacuum metallizing
|
|
|
1968
|
7 |
4 |
p. 339-
1 p.
|
artikel
|
| 15 |
Bidirectional electrochemical trimming of thick film resistors
|
|
|
1968
|
7 |
4 |
p. 336-337
2 p.
|
artikel
|
| 16 |
Bonding techniques for microelectronics
|
|
|
1968
|
7 |
4 |
p. 345-
1 p.
|
artikel
|
| 17 |
Calculation of the attenuation error of a ladder network with respect to the adjustment tolerances of tantalum nitride resistors
|
Grange, J.M.
|
|
1968
|
7 |
4 |
p. 321-327
7 p.
|
artikel
|
| 18 |
Complex hybrid integrated circuits
|
|
|
1968
|
7 |
4 |
p. 346-
1 p.
|
artikel
|
| 19 |
Computer-aided design—II. Short cuts to ICs and p-c boards
|
|
|
1968
|
7 |
4 |
p. 345-
1 p.
|
artikel
|
| 20 |
Computer aided layout of microcircuits
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 21 |
Computer-automated isothermal contouring
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 22 |
Controlled growth of conducting thin films using an electron beam
|
|
|
1968
|
7 |
4 |
p. 343-
1 p.
|
artikel
|
| 23 |
Controlled oxidation of tantalum and aluminium in a radio-frequency-excited glow discharge
|
|
|
1968
|
7 |
4 |
p. 340-
1 p.
|
artikel
|
| 24 |
Controlled processing for precision thick film resistors
|
|
|
1968
|
7 |
4 |
p. 335-
1 p.
|
artikel
|
| 25 |
Correlated structure in evaporated Cermet films
|
|
|
1968
|
7 |
4 |
p. 339-
1 p.
|
artikel
|
| 26 |
Cutting of thin metal films with a CO2-gas laser beam
|
Siekman, J.G.
|
|
1968
|
7 |
4 |
p. 305-306
2 p.
|
artikel
|
| 27 |
Design trade-offs for integrated sense amplifiers
|
|
|
1968
|
7 |
4 |
p. 344-
1 p.
|
artikel
|
| 28 |
Dielectric properties of films formed by vacuum evaporation of silicon monoxide
|
|
|
1968
|
7 |
4 |
p. 339-
1 p.
|
artikel
|
| 29 |
Direct interconnections of uncased silicon integrated circuit chips
|
|
|
1968
|
7 |
4 |
p. 344-
1 p.
|
artikel
|
| 30 |
Disproportionation and vaporization of solid silicon monoxide
|
|
|
1968
|
7 |
4 |
p. 341-
1 p.
|
artikel
|
| 31 |
Drawing board for ICs
|
|
|
1968
|
7 |
4 |
p. 344-345
2 p.
|
artikel
|
| 32 |
Duoplasmatron ion beam source for vacuum sputtering of thin films
|
|
|
1968
|
7 |
4 |
p. 340-341
2 p.
|
artikel
|
| 33 |
Effect of background-gas impurities on the formation of sputtered beta-tantalum films
|
|
|
1968
|
7 |
4 |
p. 340-
1 p.
|
artikel
|
| 34 |
Elastoresistive effect in oriented thin films
|
|
|
1968
|
7 |
4 |
p. 343-
1 p.
|
artikel
|
| 35 |
Environmental testing of IC packages
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 36 |
Evaluation of doping profiles from capacitance measurements
|
|
|
1968
|
7 |
4 |
p. 334-
1 p.
|
artikel
|
| 37 |
Evolution of integrated circuit manufacturing techniques
|
|
|
1968
|
7 |
4 |
p. 347-
1 p.
|
artikel
|
| 38 |
Fabrication of large arrays on sapphire substrates
|
|
|
1968
|
7 |
4 |
p. 344-
1 p.
|
artikel
|
| 39 |
Flash evaporation and thin films of cuprous sulphide, selenide and telluride
|
|
|
1968
|
7 |
4 |
p. 341-
1 p.
|
artikel
|
| 40 |
Generating IC masks automatically
|
|
|
1968
|
7 |
4 |
p. 345-
1 p.
|
artikel
|
| 41 |
Growth of crystalline silicon films on polycrystalline substrates by vacuum evaporation
|
|
|
1968
|
7 |
4 |
p. 343-
1 p.
|
artikel
|
| 42 |
IC testing tries to keep up with gains in IC technology
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 43 |
Influence of a superimposed film on the electrical conductivity of thin metal films
|
|
|
1968
|
7 |
4 |
p. 341-
1 p.
|
artikel
|
| 44 |
Infrared microscopy. A new method in microelectronics—II. Practice
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 45 |
Integrated cicuit technology and application—VIII
|
|
|
1968
|
7 |
4 |
p. 347-
1 p.
|
artikel
|
| 46 |
Integrated electronics. Putting the stress on IC reliability
|
|
|
1968
|
7 |
4 |
p. 332-
1 p.
|
artikel
|
| 47 |
Interface properties of MOS structures prepared by reactive sputtering
|
|
|
1968
|
7 |
4 |
p. 337-338
2 p.
|
artikel
|
| 48 |
Ion implantation in semiconductors—I. Range distribution theory and experiments
|
|
|
1968
|
7 |
4 |
p. 347-
1 p.
|
artikel
|
| 49 |
Maintainability—a design parameter
|
|
|
1968
|
7 |
4 |
p. 332-
1 p.
|
artikel
|
| 50 |
Measurement of film thickness using infrared interference
|
|
|
1968
|
7 |
4 |
p. 341-
1 p.
|
artikel
|
| 51 |
Measurements on microcircuits in the range 100–1000 MHz
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 52 |
Metal-semiconductor contact measurements using a VHF bridge
|
|
|
1968
|
7 |
4 |
p. 335-
1 p.
|
artikel
|
| 53 |
Morphological changes in discontinuous gold films following deposition
|
|
|
1968
|
7 |
4 |
p. 338-
1 p.
|
artikel
|
| 54 |
MOS elements and MOS integrated circuits
|
|
|
1968
|
7 |
4 |
p. 334-
1 p.
|
artikel
|
| 55 |
Nature of an oxide layer thermally grown on silicon and determination of its thickness, both from the infra-red properties
|
|
|
1968
|
7 |
4 |
p. 334-
1 p.
|
artikel
|
| 56 |
New thin film cermet resistors
|
Hammond, V.J.
|
|
1968
|
7 |
4 |
p. 287-288
2 p.
|
artikel
|
| 57 |
On-characteristics of planar SCR's with regard to the use of these devices in monolithic circuits
|
|
|
1968
|
7 |
4 |
p. 334-
1 p.
|
artikel
|
| 58 |
On the physics of purple-plague formation, and the observation of purple plague in ultrasonically-joined gold-aluminum bonds
|
|
|
1968
|
7 |
4 |
p. 345-
1 p.
|
artikel
|
| 59 |
Preparation and characterization of manganese oxide thin films
|
|
|
1968
|
7 |
4 |
p. 340-
1 p.
|
artikel
|
| 60 |
Preparation of thin films of nickel ferrites by reactive sputtering
|
|
|
1968
|
7 |
4 |
p. 338-339
2 p.
|
artikel
|
| 61 |
Properties of vapour grown silicon nitride films
|
|
|
1968
|
7 |
4 |
p. 338-
1 p.
|
artikel
|
| 62 |
Quantitative determination of evaporated Si films by neutron activation
|
|
|
1968
|
7 |
4 |
p. 338-
1 p.
|
artikel
|
| 63 |
Reliability and redundancy
|
|
|
1968
|
7 |
4 |
p. 332-
1 p.
|
artikel
|
| 64 |
Reliability testing of plastic packaged devices
|
|
|
1968
|
7 |
4 |
p. 331-
1 p.
|
artikel
|
| 65 |
Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300°K
|
|
|
1968
|
7 |
4 |
p. 334-
1 p.
|
artikel
|
| 66 |
Results of reliability tests on planar transistors
|
Schlegel, E.
|
|
1968
|
7 |
4 |
p. 291-300
10 p.
|
artikel
|
| 67 |
Screened “thick film” resistors
|
|
|
1968
|
7 |
4 |
p. 335-
1 p.
|
artikel
|
| 68 |
Selection of a system packaging concept for microelectronic equipment
|
|
|
1968
|
7 |
4 |
p. 343-344
2 p.
|
artikel
|
| 69 |
Semiconducting materials
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 70 |
Semiconductor device life and system removal rates
|
|
|
1968
|
7 |
4 |
p. 331-
1 p.
|
artikel
|
| 71 |
Semiconductor devices for the SF submarine cable
|
|
|
1968
|
7 |
4 |
p. 331-
1 p.
|
artikel
|
| 72 |
Silicon nitride and its application to semiconductor devices
|
|
|
1968
|
7 |
4 |
p. 334-
1 p.
|
artikel
|
| 73 |
Silicon nitride films by reactive sputtering
|
|
|
1968
|
7 |
4 |
p. 340-
1 p.
|
artikel
|
| 74 |
Single carrier transport in thin dielectric films
|
|
|
1968
|
7 |
4 |
p. 339-
1 p.
|
artikel
|
| 75 |
Study of the energy distribution and nucleation of evaporated gold using a velocity selector
|
|
|
1968
|
7 |
4 |
p. 339-
1 p.
|
artikel
|
| 76 |
Tantalum oxide films prepared by oxygen plasma anodization and reactive sputtering
|
|
|
1968
|
7 |
4 |
p. 342-
1 p.
|
artikel
|
| 77 |
Tantalum oxide-silicon oxide duplex dielectric thin-film capacitors
|
|
|
1968
|
7 |
4 |
p. 342-
1 p.
|
artikel
|
| 78 |
The integrated circuit in analogue instruments
|
|
|
1968
|
7 |
4 |
p. 346-
1 p.
|
artikel
|
| 79 |
The “Master Artwork” concept. A standardized approach to the production of printed wiring boards
|
|
|
1968
|
7 |
4 |
p. 346-
1 p.
|
artikel
|
| 80 |
The mechanism of conduction in thick-film cermet resistors
|
|
|
1968
|
7 |
4 |
p. 336-
1 p.
|
artikel
|
| 81 |
The metallographic preparation of micro-miniature devices
|
Carter, R.H.
|
|
1968
|
7 |
4 |
p. 301-302
2 p.
|
artikel
|
| 82 |
The preparation and application of tantalum thin film passive components
|
|
|
1968
|
7 |
4 |
p. 341-
1 p.
|
artikel
|
| 83 |
The preparation of thin films for electronic applications
|
|
|
1968
|
7 |
4 |
p. 335-
1 p.
|
artikel
|
| 84 |
The properties and evaluation of thin film interconnections and insulating crossovers
|
|
|
1968
|
7 |
4 |
p. 337-
1 p.
|
artikel
|
| 85 |
The pulsed gas laser and its application to microcircuit fabrication
|
|
|
1968
|
7 |
4 |
p. 346-
1 p.
|
artikel
|
| 86 |
Thermal feedback in integrated circuits
|
|
|
1968
|
7 |
4 |
p. 333-
1 p.
|
artikel
|
| 87 |
Thermal-pulse bonding of beam leads
|
|
|
1968
|
7 |
4 |
p. 343-
1 p.
|
artikel
|
| 88 |
The TEG — A test element for the control of quality and reliability of integrated circuits
|
|
|
1968
|
7 |
4 |
p. 332-
1 p.
|
artikel
|
| 89 |
The use of a breadboard chip in conjunction with computer-aided design of integrated circuits
|
Curtis, T.D.W.
|
|
1968
|
7 |
4 |
p. 313-314
2 p.
|
artikel
|
| 90 |
Thin film cermet resistors for integrated circuits
|
|
|
1968
|
7 |
4 |
p. 337-
1 p.
|
artikel
|
| 91 |
Thin films of nickel oxide and their application in thin-film triodes
|
|
|
1968
|
7 |
4 |
p. 336-
1 p.
|
artikel
|
| 92 |
Transitions in vapour-deposited alumina from 300° to 1200°C
|
|
|
1968
|
7 |
4 |
p. 338-
1 p.
|
artikel
|
| 93 |
Vacuum deposited germanium films on polycrystalline Al2O3 substrates
|
|
|
1968
|
7 |
4 |
p. 338-
1 p.
|
artikel
|
| 94 |
Vacuum processes for the deposition of thin films
|
|
|
1968
|
7 |
4 |
p. 342-
1 p.
|
artikel
|
| 95 |
Variables affecting uniformity in the screen process printing of printed and fired-on films and the development of a squeegee design for improving uniformity
|
|
|
1968
|
7 |
4 |
p. 337-
1 p.
|
artikel
|
| 96 |
X-rays can find wafer imperfections
|
|
|
1968
|
7 |
4 |
p. 331-
1 p.
|
artikel
|
| 97 |
Zinc and aluminium metallized plastics dielectrics capacitors
|
|
|
1968
|
7 |
4 |
p. 343-
1 p.
|
artikel
|
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