| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active thin-film devices, Part 1
|
|
|
1967
|
6 |
3 |
p. 257-258
2 p.
|
artikel
|
| 2 |
Active thin-film devices, Part 2
|
|
|
1967
|
6 |
3 |
p. 258-
1 p.
|
artikel
|
| 3 |
A downstream look at IC testing
|
|
|
1967
|
6 |
3 |
p. 246-
1 p.
|
artikel
|
| 4 |
Advantages and limitations of AOQL and AQL sampling schemes
|
|
|
1967
|
6 |
3 |
p. 241-
1 p.
|
artikel
|
| 5 |
Aging mechanisms in thin resistor films
|
|
|
1967
|
6 |
3 |
p. 253-254
2 p.
|
artikel
|
| 6 |
An analysis of deep depletion thin-film MOS transistors
|
|
|
1967
|
6 |
3 |
p. 252-
1 p.
|
artikel
|
| 7 |
An approach to analysis reliability of switching circuits reliability
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 8 |
An investigation into marine radar reliability
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 9 |
Anisotropy of critical field in low-temperature electrical breakdown in n-type silicon
|
|
|
1967
|
6 |
3 |
p. 248-
1 p.
|
artikel
|
| 10 |
A process for the determination of the thickness of coating layers
|
|
|
1967
|
6 |
3 |
p. 254-
1 p.
|
artikel
|
| 11 |
A simple estimation of failure rate
|
Temler, J
|
|
1967
|
6 |
3 |
p. 239-240
2 p.
|
artikel
|
| 12 |
A study of factors affecting silicon growth on amorphous SiO2 surfaces
|
|
|
1967
|
6 |
3 |
p. 248-
1 p.
|
artikel
|
| 13 |
A survey of diffusion processes for fabricating integrated circuits
|
|
|
1967
|
6 |
3 |
p. 248-249
2 p.
|
artikel
|
| 14 |
A survey of second breakdown
|
|
|
1967
|
6 |
3 |
p. 242-
1 p.
|
artikel
|
| 15 |
Automatic control and monitoring system for thin-film deposition
|
|
|
1967
|
6 |
3 |
p. 257-
1 p.
|
artikel
|
| 16 |
Avalanche breakdown calculations for a planar p-n junction
|
|
|
1967
|
6 |
3 |
p. 243-
1 p.
|
artikel
|
| 17 |
Avalanche breakdown of diffused silicon p-n junctions
|
|
|
1967
|
6 |
3 |
p. 253-
1 p.
|
artikel
|
| 18 |
A viscosity gauge for pressure measurement in the range 10−6 to 10−4 torr
|
|
|
1967
|
6 |
3 |
p. 256-
1 p.
|
artikel
|
| 19 |
Barrier energies in metal-silicon dioxide-silicon structures
|
|
|
1967
|
6 |
3 |
p. 250-
1 p.
|
artikel
|
| 20 |
Birefringent tape—a new, easier technique for separating thin film and printed circuit master drawings with perfect registration
|
|
|
1967
|
6 |
3 |
p. 257-
1 p.
|
artikel
|
| 21 |
Boat heat-up in diffusion furnaces
|
|
|
1967
|
6 |
3 |
p. 250-
1 p.
|
artikel
|
| 22 |
Breakdown voitage of planar silicon junctions
|
|
|
1967
|
6 |
3 |
p. 246-
1 p.
|
artikel
|
| 23 |
Calculating the speed of pumping systems
|
|
|
1967
|
6 |
3 |
p. 256-257
2 p.
|
artikel
|
| 24 |
Calculations of cutoff frequency, breakdown voltage and capacitance for diffused junctions in thin epitaxial silicon layers
|
|
|
1967
|
6 |
3 |
p. 252-253
2 p.
|
artikel
|
| 25 |
Control of diffusion induced dislocations in phosphorus diffused silicon
|
|
|
1967
|
6 |
3 |
p. 247-
1 p.
|
artikel
|
| 26 |
Critical excitation function of distributed-parameter devices
|
|
|
1967
|
6 |
3 |
p. 257-
1 p.
|
artikel
|
| 27 |
Current transport in metal-semiconductor barriers
|
|
|
1967
|
6 |
3 |
p. 249-
1 p.
|
artikel
|
| 28 |
Design of monolithic circuit chips
|
|
|
1967
|
6 |
3 |
p. 251-
1 p.
|
artikel
|
| 29 |
Dielectric properties of some thin organic polymer films
|
|
|
1967
|
6 |
3 |
p. 253-
1 p.
|
artikel
|
| 30 |
Dielectric thin films through RF sputtering
|
|
|
1967
|
6 |
3 |
p. 254-
1 p.
|
artikel
|
| 31 |
Directional growth of single-crystal silicon films across silicon carbide by a moving deposition-zone technique
|
|
|
1967
|
6 |
3 |
p. 247-
1 p.
|
artikel
|
| 32 |
“Dirt” in relays—its cause, effect and control
|
|
|
1967
|
6 |
3 |
p. 241-
1 p.
|
artikel
|
| 33 |
Dislocation-induced deviation of phosphorus-diffusion profiles in silicon
|
|
|
1967
|
6 |
3 |
p. 250-
1 p.
|
artikel
|
| 34 |
Education for the microelectronics era
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 35 |
Effect of electron energy on defect introduction in silicon
|
|
|
1967
|
6 |
3 |
p. 247-
1 p.
|
artikel
|
| 36 |
Effects of fabrication parameters on structural and electronic properties of thin CdS and CdSe films
|
|
|
1967
|
6 |
3 |
p. 254-
1 p.
|
artikel
|
| 37 |
Electronic telephone exchanges: component selection and mode of operation
|
|
|
1967
|
6 |
3 |
p. 241-242
2 p.
|
artikel
|
| 38 |
Experimental demonstration and theory of a corrective to second breakdown in Si power transistors
|
|
|
1967
|
6 |
3 |
p. 242-243
2 p.
|
artikel
|
| 39 |
Factors affecting transistor failure
|
|
|
1967
|
6 |
3 |
p. 243-
1 p.
|
artikel
|
| 40 |
Gallium arsemide planar technology
|
|
|
1967
|
6 |
3 |
p. 250-
1 p.
|
artikel
|
| 41 |
High mobility thin films of indium antimonide vacuum deposited on to a cold substrate
|
|
|
1967
|
6 |
3 |
p. 255-
1 p.
|
artikel
|
| 42 |
High-speed saw for dicing silicon wafers
|
|
|
1967
|
6 |
3 |
p. 252-
1 p.
|
artikel
|
| 43 |
Ideal MOS curves for silicon
|
|
|
1967
|
6 |
3 |
p. 248-
1 p.
|
artikel
|
| 44 |
Induction heating and solid state technology
|
|
|
1967
|
6 |
3 |
p. 249-
1 p.
|
artikel
|
| 45 |
Influence of damaged surface layer on resistivity and mobility of thin semiconductor sheets
|
|
|
1967
|
6 |
3 |
p. 247-
1 p.
|
artikel
|
| 46 |
Input power induced thermal effects related to transition time between avalanche and second breakdown in p-n silicon junctions
|
|
|
1967
|
6 |
3 |
p. 243-
1 p.
|
artikel
|
| 47 |
Integrated circuit mask fabrication
|
|
|
1967
|
6 |
3 |
p. 250-
1 p.
|
artikel
|
| 48 |
Integrated circuits 1966
|
|
|
1967
|
6 |
3 |
p. 246-
1 p.
|
artikel
|
| 49 |
Integrated circuits in action: Part 3. Getting your money's worth
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 50 |
Integrated circuits in action: Part 5. In search of the ideal logic scheme
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 51 |
Integrated circuits in action: Part 4. Postmortems prevent future failures
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 52 |
Integrated circuits in action: Part 1. The great design dilemma
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 53 |
Integrated circuits in action: Part 2. Trends and trade offs
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 54 |
Integrated thin-film circuits incorporating active and passive elements
|
|
|
1967
|
6 |
3 |
p. 253-
1 p.
|
artikel
|
| 55 |
Interconnection of monolithic integrated circuits through the use of advanced materials and techniques
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 56 |
Irradiation and annealing of silicon planar transistors
|
|
|
1967
|
6 |
3 |
p. 246-247
2 p.
|
artikel
|
| 57 |
Large scale integration
|
|
|
1967
|
6 |
3 |
p. 245-246
2 p.
|
artikel
|
| 58 |
Metal-semiconductor surface barriers
|
|
|
1967
|
6 |
3 |
p. 249-
1 p.
|
artikel
|
| 59 |
Microelectronics—a review
|
|
|
1967
|
6 |
3 |
p. 246-
1 p.
|
artikel
|
| 60 |
Microelectronics technology—a look at fabrication methods
|
|
|
1967
|
6 |
3 |
p. 245-
1 p.
|
artikel
|
| 61 |
Microinhomogeneity problems in silicon
|
|
|
1967
|
6 |
3 |
p. 251-
1 p.
|
artikel
|
| 62 |
Micropower redundant circuits correct errors automatically
|
|
|
1967
|
6 |
3 |
p. 241-
1 p.
|
artikel
|
| 63 |
Monelithics-fabrication costs analyzed
|
|
|
1967
|
6 |
3 |
p. 252-
1 p.
|
artikel
|
| 64 |
nGe-pGaAs heterojunctions
|
|
|
1967
|
6 |
3 |
p. 249-
1 p.
|
artikel
|
| 65 |
Nichromo-silicon monoxide cermet resistors for compatible thin-film monolithic circuits
|
|
|
1967
|
6 |
3 |
p. 254-255
2 p.
|
artikel
|
| 66 |
Optimizing transistor parameters in integrated circuits
|
|
|
1967
|
6 |
3 |
p. 248-
1 p.
|
artikel
|
| 67 |
Oxidation of thin evaporated rhenium films
|
|
|
1967
|
6 |
3 |
p. 255-
1 p.
|
artikel
|
| 68 |
Physical investigation of the mesoplasma in silicon
|
|
|
1967
|
6 |
3 |
p. 251-
1 p.
|
artikel
|
| 69 |
Porte logique a emetteurs couples realisee en circuit integre
|
Lacour, J.
|
|
1967
|
6 |
3 |
p. 223-224
2 p.
|
artikel
|
| 70 |
Prediction of temperature and power handling capabilities of thin-film resistors and circuits
|
|
|
1967
|
6 |
3 |
p. 255-256
2 p.
|
artikel
|
| 71 |
Pressure fluctuations in vacuum systems
|
|
|
1967
|
6 |
3 |
p. 257-
1 p.
|
artikel
|
| 72 |
Properties and life performance of silicon monoxide capacitors
|
|
|
1967
|
6 |
3 |
p. 242-
1 p.
|
artikel
|
| 73 |
Properties of the silicon dioxide-silicon system
|
|
|
1967
|
6 |
3 |
p. 251-
1 p.
|
artikel
|
| 74 |
Radar reliability on trawlers
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 75 |
Reactively sputtered titanium resistors, capacitors and rectifiers for microcircuits
|
Wasa, Kiyotaka
|
|
1967
|
6 |
3 |
p. 213-214
2 p.
|
artikel
|
| 76 |
Residual gas analysis in a vacuum evaporator
|
|
|
1967
|
6 |
3 |
p. 256-
1 p.
|
artikel
|
| 77 |
Second breakdown in simplified transistor structures and diodes
|
|
|
1967
|
6 |
3 |
p. 243-
1 p.
|
artikel
|
| 78 |
Service problems with electronic measuring instruments
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 79 |
Simultaneous three-element condensation
|
|
|
1967
|
6 |
3 |
p. 255-
1 p.
|
artikel
|
| 80 |
Some practical considerations in the fabrication of printed glaze resistors and circuits
|
|
|
1967
|
6 |
3 |
p. 256-
1 p.
|
artikel
|
| 81 |
Support materials for semiconductor devices
|
|
|
1967
|
6 |
3 |
p. 250-
1 p.
|
artikel
|
| 82 |
Surface states at steam-grown silicon-silicon dioxide interfaces
|
|
|
1967
|
6 |
3 |
p. 250-251
2 p.
|
artikel
|
| 83 |
Test methods in the manufacture of silicon microcircuits
|
Davidson, I.A.
|
|
1967
|
6 |
3 |
p. 209-210
2 p.
|
artikel
|
| 84 |
The art of semiconductor doping by ion implantation
|
|
|
1967
|
6 |
3 |
p. 248-
1 p.
|
artikel
|
| 85 |
The effect of nonparabolic energy bands on tunneling through thin insulating films
|
|
|
1967
|
6 |
3 |
p. 248-
1 p.
|
artikel
|
| 86 |
The preparation and properties of sputtered Al thin films
|
|
|
1967
|
6 |
3 |
p. 254-
1 p.
|
artikel
|
| 87 |
The reliability of electronic equipment
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 88 |
The role of adsorption in heterogeneous vapor-solid nucleation
|
|
|
1967
|
6 |
3 |
p. 249-250
2 p.
|
artikel
|
| 89 |
The spatial variation of the quasi-fermi potentials in p-n junctions
|
|
|
1967
|
6 |
3 |
p. 252-
1 p.
|
artikel
|
| 90 |
The vapour phase deposition of metals and their compounds: Applications in electronics
|
Buck, R.H.
|
|
1967
|
6 |
3 |
p. 231-237
7 p.
|
artikel
|
| 91 |
Thick film hybrid microelectronic circuit technology
|
|
|
1967
|
6 |
3 |
p. 256-
1 p.
|
artikel
|
| 92 |
Thin-film transistors
|
|
|
1967
|
6 |
3 |
p. 255-
1 p.
|
artikel
|
| 93 |
Training for fault diagnosis
|
|
|
1967
|
6 |
3 |
p. 244-
1 p.
|
artikel
|
| 94 |
Transistor failure by secondary breakdown
|
|
|
1967
|
6 |
3 |
p. 242-
1 p.
|
artikel
|
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