| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Calendar
|
|
|
2001
|
41 |
8 |
p. I-V
nvt p.
|
article
|
| 2 |
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
|
Würfl, Joachim
|
|
2001
|
41 |
8 |
p. 1103-1108
6 p.
|
article
|
| 3 |
Developments of new concept analytical instruments for failure analyses of sub-100 nm devices
|
Mitsui, Yasuhiro
|
|
2001
|
41 |
8 |
p. 1171-1183
13 p.
|
article
|
| 4 |
Editorial
|
Anderson, Wallace T
|
|
2001
|
41 |
8 |
p. 1101-
1 p.
|
article
|
| 5 |
Electrical probing of deep sub-micron integrated circuits using scanning probes
|
Krieg, K
|
|
2001
|
41 |
8 |
p. 1185-1191
7 p.
|
article
|
| 6 |
Electromigration and electrochemical reaction mixed failure mechanism in gold interconnection system
|
Murayama, Hide
|
|
2001
|
41 |
8 |
p. 1265-1272
8 p.
|
article
|
| 7 |
Failure analysis from the back side of a die
|
Liebert, Silke
|
|
2001
|
41 |
8 |
p. 1193-1201
9 p.
|
article
|
| 8 |
Global fault localization using induced voltage alteration
|
Cole Jr, Edward I
|
|
2001
|
41 |
8 |
p. 1145-1159
15 p.
|
article
|
| 9 |
Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability
|
Paine, B.M
|
|
2001
|
41 |
8 |
p. 1115-1122
8 p.
|
article
|
| 10 |
Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique
|
Koyama, T
|
|
2001
|
41 |
8 |
p. 1243-1253
11 p.
|
article
|
| 11 |
Location of defective cells in HBT power amplifier arrays using IR emission microscopy
|
Dai, Peter
|
|
2001
|
41 |
8 |
p. 1137-1141
5 p.
|
article
|
| 12 |
Mechanism of pre-annealing effect on electromigration immunity of Al–Cu line
|
Mazumder, M.K
|
|
2001
|
41 |
8 |
p. 1259-1264
6 p.
|
article
|
| 13 |
[No title]
|
Barton, Daniel L
|
|
2001
|
41 |
8 |
p. 1143-1144
2 p.
|
article
|
| 14 |
Observation of the internal waveforms in high-speed high-density LSIs using an EOS prober
|
Hashimoto, Chisato
|
|
2001
|
41 |
8 |
p. 1203-1209
7 p.
|
article
|
| 15 |
Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study
|
Anderson, W.T
|
|
2001
|
41 |
8 |
p. 1109-1113
5 p.
|
article
|
| 16 |
RF modeling approach to determining end-of-life reliability for InP-based HBTs
|
Thomas III, S
|
|
2001
|
41 |
8 |
p. 1129-1135
7 p.
|
article
|
| 17 |
Scanning probe microscopy in semiconductor failure analysis
|
Ebersberger, B
|
|
2001
|
41 |
8 |
p. 1231-1236
6 p.
|
article
|
| 18 |
Scanning SQUID microscopy for current imaging
|
Knauss, L.A.
|
|
2001
|
41 |
8 |
p. 1211-1229
19 p.
|
article
|
| 19 |
Scanning thermal microscopy studies of local temperature distribution of micron-sized metallization lines
|
Ji, Yuan
|
|
2001
|
41 |
8 |
p. 1255-1258
4 p.
|
article
|
| 20 |
Single contact optical beam induced currents
|
Chin, J.M
|
|
2001
|
41 |
8 |
p. 1237-1242
6 p.
|
article
|
| 21 |
Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices
|
De Wolf, Ingrid
|
|
2001
|
41 |
8 |
p. 1161-1169
9 p.
|
article
|
| 22 |
Volume impacts on GaAs reliability improvement
|
Roesch, William J
|
|
2001
|
41 |
8 |
p. 1123-1127
5 p.
|
article
|
Journal description