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                             22 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Calendar 2001
41 8 p. I-V
nvt p.
artikel
2 Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing Würfl, Joachim
2001
41 8 p. 1103-1108
6 p.
artikel
3 Developments of new concept analytical instruments for failure analyses of sub-100 nm devices Mitsui, Yasuhiro
2001
41 8 p. 1171-1183
13 p.
artikel
4 Editorial Anderson, Wallace T
2001
41 8 p. 1101-
1 p.
artikel
5 Electrical probing of deep sub-micron integrated circuits using scanning probes Krieg, K
2001
41 8 p. 1185-1191
7 p.
artikel
6 Electromigration and electrochemical reaction mixed failure mechanism in gold interconnection system Murayama, Hide
2001
41 8 p. 1265-1272
8 p.
artikel
7 Failure analysis from the back side of a die Liebert, Silke
2001
41 8 p. 1193-1201
9 p.
artikel
8 Global fault localization using induced voltage alteration Cole Jr, Edward I
2001
41 8 p. 1145-1159
15 p.
artikel
9 Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability Paine, B.M
2001
41 8 p. 1115-1122
8 p.
artikel
10 Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique Koyama, T
2001
41 8 p. 1243-1253
11 p.
artikel
11 Location of defective cells in HBT power amplifier arrays using IR emission microscopy Dai, Peter
2001
41 8 p. 1137-1141
5 p.
artikel
12 Mechanism of pre-annealing effect on electromigration immunity of Al–Cu line Mazumder, M.K
2001
41 8 p. 1259-1264
6 p.
artikel
13 [No title] Barton, Daniel L
2001
41 8 p. 1143-1144
2 p.
artikel
14 Observation of the internal waveforms in high-speed high-density LSIs using an EOS prober Hashimoto, Chisato
2001
41 8 p. 1203-1209
7 p.
artikel
15 Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study Anderson, W.T
2001
41 8 p. 1109-1113
5 p.
artikel
16 RF modeling approach to determining end-of-life reliability for InP-based HBTs Thomas III, S
2001
41 8 p. 1129-1135
7 p.
artikel
17 Scanning probe microscopy in semiconductor failure analysis Ebersberger, B
2001
41 8 p. 1231-1236
6 p.
artikel
18 Scanning SQUID microscopy for current imaging Knauss, L.A.
2001
41 8 p. 1211-1229
19 p.
artikel
19 Scanning thermal microscopy studies of local temperature distribution of micron-sized metallization lines Ji, Yuan
2001
41 8 p. 1255-1258
4 p.
artikel
20 Single contact optical beam induced currents Chin, J.M
2001
41 8 p. 1237-1242
6 p.
artikel
21 Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices De Wolf, Ingrid
2001
41 8 p. 1161-1169
9 p.
artikel
22 Volume impacts on GaAs reliability improvement Roesch, William J
2001
41 8 p. 1123-1127
5 p.
artikel
                             22 gevonden resultaten
 
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