| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A characteristic analysis of high-speed integrated circuit chip based on laser probe
|
Xiaojian, Tian
|
|
2000
|
40 |
2 |
p. 329-332
4 p.
|
artikel
|
| 2 |
Analysis of colorimetric system under foggy, thermal and electrical conditions with spice/vhdl-ams
|
Charlot, J.-J.
|
|
2000
|
40 |
2 |
p. 347-353
7 p.
|
artikel
|
| 3 |
Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC
|
Li, Hui-Feng
|
|
2000
|
40 |
2 |
p. 283-286
4 p.
|
artikel
|
| 4 |
Analysis of the noise characteristics of current-feedback operational amplifier
|
Palumbo, Gaetano
|
|
2000
|
40 |
2 |
p. 321-327
7 p.
|
artikel
|
| 5 |
A new method to extract diode parameters under the presence of parasitic series and shunt resistance
|
Ranuárez, J.C
|
|
2000
|
40 |
2 |
p. 355-358
4 p.
|
artikel
|
| 6 |
A simple VLSI spherical particle-induced fault simulator: application to DRAM production process
|
Nakamae, Koji
|
|
2000
|
40 |
2 |
p. 245-253
9 p.
|
artikel
|
| 7 |
Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications
|
Vendrame, Loris
|
|
2000
|
40 |
2 |
p. 207-230
24 p.
|
artikel
|
| 8 |
Design error diagnosis in digital circuits with stuck-at fault model
|
Jutman, A.
|
|
2000
|
40 |
2 |
p. 307-320
14 p.
|
artikel
|
| 9 |
Effective method for evaluation of semiconductor laser quality
|
Li, Hongyan
|
|
2000
|
40 |
2 |
p. 333-337
5 p.
|
artikel
|
| 10 |
Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs
|
Dammann, M.
|
|
2000
|
40 |
2 |
p. 287-291
5 p.
|
artikel
|
| 11 |
Electrical characterization of ultra-shallow n+p junctions formed by AsH3 plasma immersion implantation
|
Yang, B.L
|
|
2000
|
40 |
2 |
p. 277-281
5 p.
|
artikel
|
| 12 |
Fault model for sub-micron CMOS ULSI circuits reliability assessment
|
Lisenker, B.
|
|
2000
|
40 |
2 |
p. 255-265
11 p.
|
artikel
|
| 13 |
Fundamentals of III–V Devices HBTs, MESFETs, and HFETs/HEMTs; William Liu, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA, 1999, 505 pp. ISBN: 0-471-29700-3, GBP 61.50
|
Karamarković, J
|
|
2000
|
40 |
2 |
p. 361-
1 p.
|
artikel
|
| 14 |
InP-Based Materials and Devices: Physics and Technology; O. Wada, H. Hasegawa, John Wiley & Sons, Inc., New York. ISBN 0-471-18191-9, £80.95
|
Jevtić, Milan M
|
|
2000
|
40 |
2 |
p. 363-364
2 p.
|
artikel
|
| 15 |
Method for assessing remaining life in electronic assemblies
|
McCluskey, F.P
|
|
2000
|
40 |
2 |
p. 293-306
14 p.
|
artikel
|
| 16 |
Perspectives on giga-bit scaled DRAM technology generation
|
Kim, Kinam
|
|
2000
|
40 |
2 |
p. 191-206
16 p.
|
artikel
|
| 17 |
Processing induced material interactions determining the reliability of LTCC multichip modules
|
Harsányi, Gábor
|
|
2000
|
40 |
2 |
p. 339-345
7 p.
|
artikel
|
| 18 |
SiGe, GaAs, and InP Heterojunction Bipolar Transistors; Jiann S. Yuan, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA, 1999, 463 pp. ISBN: 0-471-19746-7, GBP 64.50
|
Karamarković, J
|
|
2000
|
40 |
2 |
p. 359-
1 p.
|
artikel
|
| 19 |
Solder joint fatigue models: review and applicability to chip scale packages
|
Lee, W.W
|
|
2000
|
40 |
2 |
p. 231-244
14 p.
|
artikel
|
| 20 |
The influence of stud bumping stress on device degradation in scaled MOSFETs
|
Shimoyama, Nobuhiro
|
|
2000
|
40 |
2 |
p. 267-275
9 p.
|
artikel
|
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