nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A general model of 1/f γ noise
|
Pellegrini, Bruno |
|
2000 |
40 |
11 |
p. 1775-1780 6 p. |
artikel |
2 |
Characterization of generation–recombination noise using a physics-based device noise simulator
|
Hou, Fan-Chi |
|
2000 |
40 |
11 |
p. 1883-1886 4 p. |
artikel |
3 |
Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals
|
Amarasinghe, Nuditha Vibhavie |
|
2000 |
40 |
11 |
p. 1875-1881 7 p. |
artikel |
4 |
Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT
|
Delseny, C |
|
2000 |
40 |
11 |
p. 1869-1874 6 p. |
artikel |
5 |
Current crowding and its effect on 1/f noise and third harmonic distortion – a case study for quality assessment of resistors
|
Vandamme, E.P. |
|
2000 |
40 |
11 |
p. 1847-1853 7 p. |
artikel |
6 |
Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors
|
Sandén, Martin |
|
2000 |
40 |
11 |
p. 1863-1867 5 p. |
artikel |
7 |
Dependence of Hooge parameter of InAs heterostructure on temperature
|
Tacano, M |
|
2000 |
40 |
11 |
p. 1921-1924 4 p. |
artikel |
8 |
Driven Lorentz gas with 1/f k noise
|
Kumičák, Juraj |
|
2000 |
40 |
11 |
p. 1799-1802 4 p. |
artikel |
9 |
Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors
|
González, T. |
|
2000 |
40 |
11 |
p. 1951-1954 4 p. |
artikel |
10 |
Effects of quantization on random telegraph signals observed in deep-submicron MOSFETs
|
Çelik-Butler, Zeynep |
|
2000 |
40 |
11 |
p. 1823-1831 9 p. |
artikel |
11 |
Electrical noise of laser diodes measured over a wide range of bias currents
|
Chen, X.Y |
|
2000 |
40 |
11 |
p. 1925-1928 4 p. |
artikel |
12 |
Experimental determination of the kurtosis of RF noise in microwave low-noise devices
|
Principato, Fabio |
|
2000 |
40 |
11 |
p. 1929-1935 7 p. |
artikel |
13 |
1/f phase noise in a transistor and its application to reduce the frequency fluctuation in an oscillator
|
Takagi, Keiji |
|
2000 |
40 |
11 |
p. 1943-1950 8 p. |
artikel |
14 |
Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
|
Berntgen, Jürgen |
|
2000 |
40 |
11 |
p. 1911-1914 4 p. |
artikel |
15 |
Hot-electron velocity fluctuations in two-dimensional electron gas channels
|
Matulionis, A. |
|
2000 |
40 |
11 |
p. 1803-1814 12 p. |
artikel |
16 |
Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies
|
Claeys, C |
|
2000 |
40 |
11 |
p. 1815-1821 7 p. |
artikel |
17 |
Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors
|
Deen, M.Jamal |
|
2000 |
40 |
11 |
p. 1855-1861 7 p. |
artikel |
18 |
Low frequency noise in gate and drain of PHEMT’s and related correlation
|
Vildeuil, J.C |
|
2000 |
40 |
11 |
p. 1915-1920 6 p. |
artikel |
19 |
Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors
|
Mercha, A |
|
2000 |
40 |
11 |
p. 1891-1896 6 p. |
artikel |
20 |
Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors
|
Chroboczek, J.A |
|
2000 |
40 |
11 |
p. 1897-1903 7 p. |
artikel |
21 |
Measurements of 1/f noise amplitude modulated by a large-signal carrier in bipolar junction transistors
|
Sanchez, Juan E. |
|
2000 |
40 |
11 |
p. 1839-1845 7 p. |
artikel |
22 |
Modeling of current transport and 1/f noise in heterojunction bipolar transistors
|
Ünlü, Hilmi |
|
2000 |
40 |
11 |
p. 1791-1798 8 p. |
artikel |
23 |
Models for generation 1/f noise
|
Kaulakys, B. |
|
2000 |
40 |
11 |
p. 1781-1785 5 p. |
artikel |
24 |
Noise in nanotechnology
|
Kish, L.B |
|
2000 |
40 |
11 |
p. 1833-1837 5 p. |
artikel |
25 |
Noise optimisation for the design of a reliable high speed X-ray readout integrated circuit
|
Tsakas, E.F. |
|
2000 |
40 |
11 |
p. 1937-1942 6 p. |
artikel |
26 |
[No title]
|
Surya, Charles Chee |
|
2000 |
40 |
11 |
p. 1773- 1 p. |
artikel |
27 |
On the intrinsic origin of 1/f noise
|
Kaulakys, B. |
|
2000 |
40 |
11 |
p. 1787-1790 4 p. |
artikel |
28 |
Optimum design in a JFET for minimum generation–recombination noise
|
Godoy, A |
|
2000 |
40 |
11 |
p. 1965-1968 4 p. |
artikel |
29 |
Random telegraph noise and leakage current in smart power technology DMOS devices
|
Pogany, D |
|
2000 |
40 |
11 |
p. 1887-1890 4 p. |
artikel |
30 |
Simulation of electromigration noise in polycrystalline metal stripes
|
Di Pascoli, S |
|
2000 |
40 |
11 |
p. 1955-1958 4 p. |
artikel |
31 |
Skewness and kurtosis of 1/f noise in semiconductor devices
|
Principato, Fabio |
|
2000 |
40 |
11 |
p. 1969-1973 5 p. |
artikel |
32 |
Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films
|
Surya, C. |
|
2000 |
40 |
11 |
p. 1905-1909 5 p. |
artikel |
33 |
The influence of a digital spectrum analyzer on the uncertainty in 1/f noise parameters
|
Briaire, J. |
|
2000 |
40 |
11 |
p. 1975-1980 6 p. |
artikel |
34 |
The low frequency noise in HFETs estimates the effect of electrical stress
|
Marinov, Ognian |
|
2000 |
40 |
11 |
p. 1959-1963 5 p. |
artikel |