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                             34 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A general model of 1/f γ noise Pellegrini, Bruno
2000
40 11 p. 1775-1780
6 p.
artikel
2 Characterization of generation–recombination noise using a physics-based device noise simulator Hou, Fan-Chi
2000
40 11 p. 1883-1886
4 p.
artikel
3 Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals Amarasinghe, Nuditha Vibhavie
2000
40 11 p. 1875-1881
7 p.
artikel
4 Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT Delseny, C
2000
40 11 p. 1869-1874
6 p.
artikel
5 Current crowding and its effect on 1/f noise and third harmonic distortion – a case study for quality assessment of resistors Vandamme, E.P.
2000
40 11 p. 1847-1853
7 p.
artikel
6 Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors Sandén, Martin
2000
40 11 p. 1863-1867
5 p.
artikel
7 Dependence of Hooge parameter of InAs heterostructure on temperature Tacano, M
2000
40 11 p. 1921-1924
4 p.
artikel
8 Driven Lorentz gas with 1/f k noise Kumičák, Juraj
2000
40 11 p. 1799-1802
4 p.
artikel
9 Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors González, T.
2000
40 11 p. 1951-1954
4 p.
artikel
10 Effects of quantization on random telegraph signals observed in deep-submicron MOSFETs Çelik-Butler, Zeynep
2000
40 11 p. 1823-1831
9 p.
artikel
11 Electrical noise of laser diodes measured over a wide range of bias currents Chen, X.Y
2000
40 11 p. 1925-1928
4 p.
artikel
12 Experimental determination of the kurtosis of RF noise in microwave low-noise devices Principato, Fabio
2000
40 11 p. 1929-1935
7 p.
artikel
13 1/f phase noise in a transistor and its application to reduce the frequency fluctuation in an oscillator Takagi, Keiji
2000
40 11 p. 1943-1950
8 p.
artikel
14 Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates Berntgen, Jürgen
2000
40 11 p. 1911-1914
4 p.
artikel
15 Hot-electron velocity fluctuations in two-dimensional electron gas channels Matulionis, A.
2000
40 11 p. 1803-1814
12 p.
artikel
16 Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies Claeys, C
2000
40 11 p. 1815-1821
7 p.
artikel
17 Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors Deen, M.Jamal
2000
40 11 p. 1855-1861
7 p.
artikel
18 Low frequency noise in gate and drain of PHEMT’s and related correlation Vildeuil, J.C
2000
40 11 p. 1915-1920
6 p.
artikel
19 Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors Mercha, A
2000
40 11 p. 1891-1896
6 p.
artikel
20 Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors Chroboczek, J.A
2000
40 11 p. 1897-1903
7 p.
artikel
21 Measurements of 1/f noise amplitude modulated by a large-signal carrier in bipolar junction transistors Sanchez, Juan E.
2000
40 11 p. 1839-1845
7 p.
artikel
22 Modeling of current transport and 1/f noise in heterojunction bipolar transistors Ünlü, Hilmi
2000
40 11 p. 1791-1798
8 p.
artikel
23 Models for generation 1/f noise Kaulakys, B.
2000
40 11 p. 1781-1785
5 p.
artikel
24 Noise in nanotechnology Kish, L.B
2000
40 11 p. 1833-1837
5 p.
artikel
25 Noise optimisation for the design of a reliable high speed X-ray readout integrated circuit Tsakas, E.F.
2000
40 11 p. 1937-1942
6 p.
artikel
26 [No title] Surya, Charles Chee
2000
40 11 p. 1773-
1 p.
artikel
27 On the intrinsic origin of 1/f noise Kaulakys, B.
2000
40 11 p. 1787-1790
4 p.
artikel
28 Optimum design in a JFET for minimum generation–recombination noise Godoy, A
2000
40 11 p. 1965-1968
4 p.
artikel
29 Random telegraph noise and leakage current in smart power technology DMOS devices Pogany, D
2000
40 11 p. 1887-1890
4 p.
artikel
30 Simulation of electromigration noise in polycrystalline metal stripes Di Pascoli, S
2000
40 11 p. 1955-1958
4 p.
artikel
31 Skewness and kurtosis of 1/f noise in semiconductor devices Principato, Fabio
2000
40 11 p. 1969-1973
5 p.
artikel
32 Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films Surya, C.
2000
40 11 p. 1905-1909
5 p.
artikel
33 The influence of a digital spectrum analyzer on the uncertainty in 1/f noise parameters Briaire, J.
2000
40 11 p. 1975-1980
6 p.
artikel
34 The low frequency noise in HFETs estimates the effect of electrical stress Marinov, Ognian
2000
40 11 p. 1959-1963
5 p.
artikel
                             34 gevonden resultaten
 
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