| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides
|
Ghibaudo, G
|
|
1999
|
39 |
5 |
p. 597-613
17 p.
|
artikel
|
| 2 |
Analysis of external latch-up protection test structure design using numerical simulation
|
Palser, Kevin
|
|
1999
|
39 |
5 |
p. 647-659
13 p.
|
artikel
|
| 3 |
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines
|
Scorzoni, A.
|
|
1999
|
39 |
5 |
p. 615-626
12 p.
|
artikel
|
| 4 |
A study of the thermal behavior of different test patterns used in differential high resolution electromigration measurements
|
Kelaidis, N
|
|
1999
|
39 |
5 |
p. 627-634
8 p.
|
artikel
|
| 5 |
Book review
|
|
|
1999
|
39 |
5 |
p. 719-
1 p.
|
artikel
|
| 6 |
Cathodoluminescence and photoluminescence of amorphous silicon oxynitride
|
Gritsenko, V.A.
|
|
1999
|
39 |
5 |
p. 715-718
4 p.
|
artikel
|
| 7 |
Editorial
|
|
|
1999
|
39 |
5 |
p. 595-596
2 p.
|
artikel
|
| 8 |
Editorial
|
|
|
1999
|
39 |
5 |
p. 551-
1 p.
|
artikel
|
| 9 |
Experiences on reliability simulation in the framework of the PROPHECY project
|
Rempp, Horst
|
|
1999
|
39 |
5 |
p. 661-672
12 p.
|
artikel
|
| 10 |
Local thermal probing to detect open and shorted IC interconnections
|
Cole Jr., Edward I.
|
|
1999
|
39 |
5 |
p. 681-693
13 p.
|
artikel
|
| 11 |
Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview
|
Lee, J.C.
|
|
1999
|
39 |
5 |
p. 579-593
15 p.
|
artikel
|
| 12 |
Reliability of ultrathin gate oxides for ULSI devices
|
Chang, Chun-Yen
|
|
1999
|
39 |
5 |
p. 553-566
14 p.
|
artikel
|
| 13 |
Remote plasma nitridation, deuterium anneal and pocket implant effects on NMOS hot carrier reliability
|
Aur, Shian
|
|
1999
|
39 |
5 |
p. 673-679
7 p.
|
artikel
|
| 14 |
Test structures and testing methods for electrostatic discharge: results of PROPHECY project
|
Meneghesso, G
|
|
1999
|
39 |
5 |
p. 635-646
12 p.
|
artikel
|
| 15 |
The prospect of process-induced charging damage in future thin gate oxides
|
Park, Donggun
|
|
1999
|
39 |
5 |
p. 567-577
11 p.
|
artikel
|
| 16 |
Wafer level backside emission microscopy: dynamics and effects
|
Chiang, Ching-Lang
|
|
1999
|
39 |
5 |
p. 695-708
14 p.
|
artikel
|
| 17 |
Wafer level backside emission microscopy: sample preparation
|
Chiang, Ching-Lang
|
|
1999
|
39 |
5 |
p. 709-714
6 p.
|
artikel
|
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