| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A general isodegrading model for predicting mechanical equipment reliability and performance degradation
|
Zhao, Yongxiang
|
|
1998
|
38 |
3 |
p. 427-434
8 p.
|
artikel
|
| 2 |
Analysis of conditional MTTF of fault-tolerant systems
|
Choi, Hoon
|
|
1998
|
38 |
3 |
p. 393-401
9 p.
|
artikel
|
| 3 |
A new on-chip digital BIST for analog-to-digital converters
|
Ehsanian, Mehdi
|
|
1998
|
38 |
3 |
p. 409-420
12 p.
|
artikel
|
| 4 |
An improved neural network realization for reliability analysis
|
Cheng, C.-S.
|
|
1998
|
38 |
3 |
p. 345-352
8 p.
|
artikel
|
| 5 |
Anomalous I–V and pulse noise in reverse biased p–n junctions
|
Jevtić, M.M
|
|
1998
|
38 |
3 |
p. 337-343
7 p.
|
artikel
|
| 6 |
A novel method for extraction of VDMOSFET model parameters using neural networks
|
Trajković, T.
|
|
1998
|
38 |
3 |
p. 331-335
5 p.
|
artikel
|
| 7 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 472-
1 p.
|
artikel
|
| 8 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 471-
1 p.
|
artikel
|
| 9 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 473-
1 p.
|
artikel
|
| 10 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 475-
1 p.
|
artikel
|
| 11 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 477-
1 p.
|
artikel
|
| 12 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 474-
1 p.
|
artikel
|
| 13 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 478-
1 p.
|
artikel
|
| 14 |
Book Review
|
|
|
1998
|
38 |
3 |
p. 476-
1 p.
|
artikel
|
| 15 |
Calculation of thermoelastic stresses in microelectronics
|
Matthys, Lieven
|
|
1998
|
38 |
3 |
p. 443-448
6 p.
|
artikel
|
| 16 |
Combining functional and structural approaches in test generation for digital systems
|
Ubar, Raimund
|
|
1998
|
38 |
3 |
p. 317-329
13 p.
|
artikel
|
| 17 |
Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)
|
Liu, Rong-Chau
|
|
1998
|
38 |
3 |
p. 367-372
6 p.
|
artikel
|
| 18 |
Comparison of surface recombination effect in GaAs-based heterostructure-emitter and heterostructure-base transistors (HEHBTs)
|
Liu, Rong-Chau
|
|
1998
|
38 |
3 |
p. 361-365
5 p.
|
artikel
|
| 19 |
EBIC analysis of SiC mesa diodes
|
Jargelius, M.
|
|
1998
|
38 |
3 |
p. 373-379
7 p.
|
artikel
|
| 20 |
Electromigration under time-varying current stress
|
Tao, Jiang
|
|
1998
|
38 |
3 |
p. 295-308
14 p.
|
artikel
|
| 21 |
Full length article
|
|
|
1998
|
38 |
3 |
p. 435-441
7 p.
|
artikel
|
| 22 |
Full length article
|
|
|
1998
|
38 |
3 |
p. 421-426
6 p.
|
artikel
|
| 23 |
Performance/dependability modelling using stochastic reward models: transient behaviour
|
Brenner, Andreas
|
|
1998
|
38 |
3 |
p. 449-454
6 p.
|
artikel
|
| 24 |
Qualification of plastic encapsulated microcircuits (PEM) for avionicsBased on ``Plastic Encapsulated Microcircuits (PEM) Qualification Testing'', by J. A. Scalise, which appeared in the Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, U.S.A., 28–31 May 1996, pp. 392–397. © 1996 IEEE.
|
Scalise, Joseph A.
|
|
1998
|
38 |
3 |
p. 353-359
7 p.
|
artikel
|
| 25 |
Study of Cu diffusion in an Al–1wt.%Si–0.5wt.%Cu bond pad with an Al–1wt.%Si bond wire attached using scanning electron microscopy
|
Cosemans, P.
|
|
1998
|
38 |
3 |
p. 309-315
7 p.
|
artikel
|
| 26 |
Walk-out phenomena in 6H-SiC mesa diodes with SiO2/Si3N4 passivation and charge trapping in dry and wet oxides on N-type 6H-SiC
|
Bakowski, M.
|
|
1998
|
38 |
3 |
p. 381-392
12 p.
|
artikel
|
| 27 |
Why use PEMs in military equipment: users' response
|
Hakim, Edward B.
|
|
1998
|
38 |
3 |
p. 403-407
5 p.
|
artikel
|
| 28 |
World Abstracts on Microelectronics and Reliability
|
|
|
1998
|
38 |
3 |
p. 455-470
16 p.
|
artikel
|
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