| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced modeling of silicon oxidation
|
Wolters, D.R
|
|
1998
|
38 |
2 |
p. 259-264
6 p.
|
artikel
|
| 2 |
A percolative simulation of dielectric-like breakdown
|
Pennetta, C
|
|
1998
|
38 |
2 |
p. 249-253
5 p.
|
artikel
|
| 3 |
Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides
|
Cartier, E
|
|
1998
|
38 |
2 |
p. 201-211
11 p.
|
artikel
|
| 4 |
Editorial
|
|
|
1998
|
38 |
2 |
p. iii-iv
nvt p.
|
artikel
|
| 5 |
Effect of N2O nitridation on the electrical properties of MOS gate oxides
|
Pacelli, A
|
|
1998
|
38 |
2 |
p. 239-242
4 p.
|
artikel
|
| 6 |
Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current
|
Meinertzhagen, A
|
|
1998
|
38 |
2 |
p. 221-225
5 p.
|
artikel
|
| 7 |
Electron traps created in gate oxides by Fowler–Nordheim injections
|
Auriel, G.
|
|
1998
|
38 |
2 |
p. 227-231
5 p.
|
artikel
|
| 8 |
Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon
|
Bär, E
|
|
1998
|
38 |
2 |
p. 287-291
5 p.
|
artikel
|
| 9 |
Flash memory architecture
|
Golla, C
|
|
1998
|
38 |
2 |
p. 179-184
6 p.
|
artikel
|
| 10 |
Flash memory reliability
|
Cappelletti, P
|
|
1998
|
38 |
2 |
p. 185-188
4 p.
|
artikel
|
| 11 |
Influence of charge trapping on oxide scaling down
|
Ghidini, G
|
|
1998
|
38 |
2 |
p. 217-220
4 p.
|
artikel
|
| 12 |
MOSFET parameter degradation after Fowler–Nordheim injection stress
|
Candelori, A
|
|
1998
|
38 |
2 |
p. 189-193
5 p.
|
artikel
|
| 13 |
4nm Gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
|
Bauer, A.J.
|
|
1998
|
38 |
2 |
p. 213-216
4 p.
|
artikel
|
| 14 |
Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures
|
Leveugle, C
|
|
1998
|
38 |
2 |
p. 233-237
5 p.
|
artikel
|
| 15 |
RTP annealings for high-quality LPCVD interpolysilicon dielectric layers
|
Klootwijk, J.H
|
|
1998
|
38 |
2 |
p. 277-280
4 p.
|
artikel
|
| 16 |
SiOF and SiO2 deposition in a HDP reactor: tool characterization and film analysis
|
Den Boer, D.J
|
|
1998
|
38 |
2 |
p. 281-286
6 p.
|
artikel
|
| 17 |
STI process steps for sub-quarter micron CMOS
|
Sallagoity, P
|
|
1998
|
38 |
2 |
p. 271-276
6 p.
|
artikel
|
| 18 |
Stress induced degradation features of very thin gate oxides
|
Scarpa, A
|
|
1998
|
38 |
2 |
p. 195-199
5 p.
|
artikel
|
| 19 |
Structural properties and electrical behaviour of thin silicon oxynitride layers
|
Beyer, R
|
|
1998
|
38 |
2 |
p. 243-247
5 p.
|
artikel
|
| 20 |
The impact of F contamination induced by the process on the gate oxide reliability
|
Ghidini, G
|
|
1998
|
38 |
2 |
p. 255-258
4 p.
|
artikel
|
| 21 |
Thermodynamic study, compositional and electrical characterization of LPCVD SiO2 films grown from TEOS/N2O mixtures
|
Vamvakas, V.Em.
|
|
1998
|
38 |
2 |
p. 265-269
5 p.
|
artikel
|
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