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                             26 results found
no title author magazine year volume issue page(s) type
1 A case study of IC storage failures in Taipei trains Zhang, Y
1998
38 12 p. 1811-1816
6 p.
article
2 Analysis method of pooled data for accelerated life testing Seki, T.
1998
38 12 p. 1931-1934
4 p.
article
3 A new method for extracting the effective channel length of MOSFETs Ortiz-Conde, A.
1998
38 12 p. 1867-1870
4 p.
article
4 Application of a ‘surrogate’ layer for lower bending stress in a vulnerable material of a tri-material body Suhir, E.
1998
38 12 p. 1949-1954
6 p.
article
5 Application of 1/f noise measurements to the characterization of near-interface oxide traps in ULSI n-MOSFETs Villa, S.
1998
38 12 p. 1919-1923
5 p.
article
6 Book review 1998
38 12 p. 1977-
1 p.
article
7 Book review 1998
38 12 p. 1975-1976
2 p.
article
8 Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs Thomas, Ciby
1998
38 12 p. 1955-1961
7 p.
article
9 Degradation of AlGaAs/GaAs HBTs induced by hot carriers Song, Chung-Kun
1998
38 12 p. 1907-1912
6 p.
article
10 Design rule related defects formation Hsieh, Y.F.
1998
38 12 p. 1871-1880
10 p.
article
11 Finite element analysis for solder ball failures in chip scale package Lee, Taekoo
1998
38 12 p. 1941-1947
7 p.
article
12 Hydrostatic high pressure studies of polymer thick-film resistors Dziedzic, Andrzej
1998
38 12 p. 1893-1898
6 p.
article
13 Index 1998
38 12 p. 1993-1996
4 p.
article
14 Laser-based electro-optic testing of multichip module structures Mechtel, D.M.
1998
38 12 p. 1847-1853
7 p.
article
15 Low temperature delamination of plastic encapsulated microcircuits McCluskey, P
1998
38 12 p. 1829-1834
6 p.
article
16 Microchannel gate temperature analysis Kim, Q.
1998
38 12 p. 1823-1827
5 p.
article
17 Multi-function protective relay on FPGA Manzoul, M.A.
1998
38 12 p. 1963-1968
6 p.
article
18 New positive charge trapping dynamics in SiO2 gate oxide, based on bulk impact ionization processes under Fowler–Nordheim stress Samanta, Piyas
1998
38 12 p. 1969-1973
5 p.
article
19 On the determination of the time-dependent degradation laws and device lifetime in deep submicron n- and p- channel SOI MOSFETs Renn, S.-H
1998
38 12 p. 1817-1822
6 p.
article
20 Power rectifier model including self heating effects Strollo, Antonio G.M.
1998
38 12 p. 1899-1906
8 p.
article
21 Rapid IC performance yield and distribution prediction using a rotation of the circuit parameter principals components Horan, John
1998
38 12 p. 1913-1918
6 p.
article
22 Studies on the heat removal features of stacked SOI structures with a dedicated field solver program (SUNRED) Kohári, Zs
1998
38 12 p. 1881-1891
11 p.
article
23 The effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides Zeng, X
1998
38 12 p. 1925-1929
5 p.
article
24 The effects of process induced gate-to-source/drain junction separation in MOSFET structures Rowlands, David
1998
38 12 p. 1855-1866
12 p.
article
25 The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors Wang, Y.Z
1998
38 12 p. 1835-1846
12 p.
article
26 Total dose effects on power-MOSFET switching converters Pizano, J.E
1998
38 12 p. 1935-1939
5 p.
article
                             26 results found
 
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