no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Active trimming of hybrid integrated circuits
|
|
|
1984 |
24 |
6 |
p. 1105-1106 2 p. |
article |
2 |
A current conduction mechanism in laser recrystallized silicon metal-oxide-semiconductor transistors
|
|
|
1984 |
24 |
6 |
p. 1106-1107 2 p. |
article |
3 |
A general-purpose memory reliability simulator
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
4 |
Air and nitrogen-fireable multilayer systems: materials and performance characteristics. Part 1
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
5 |
Air and nitrogen-fireable multilayer systems: materials and performance characteristics. Part II
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
6 |
Alignment signals for electron beam lithography
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
7 |
A merger of CAD and CAT is breaking the VLSI test bottleneck
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
8 |
Ammonium persulfate as a stripping and cleaning oxidant
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
9 |
A modeling technique for characterizing ion-implanted material using C-V and DLTS data
|
|
|
1984 |
24 |
6 |
p. 1108- 1 p. |
article |
10 |
An alternative approach towards the design of control units
|
Jain, Rajiv |
|
1984 |
24 |
6 |
p. 1009-1012 4 p. |
article |
11 |
Analysis of thin film fire sensors
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
12 |
8- and 16-bit processors round out high-level C-MOS architecture options
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
13 |
A new heuristic approach for redundancy optimization problem
|
Murty, V.Dakshina |
|
1984 |
24 |
6 |
p. 1013-1017 5 p. |
article |
14 |
An experimental approach to vapor phase reflow solder assembly
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
15 |
An integrated missile reliability growth program
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
16 |
A novel memory device for VLSI E2 PROM
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
17 |
Application of electron beams in thermal processing of semiconductor materials and devices
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
18 |
A reliability growth model
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
19 |
A review of thick film microwave integrated circuit technology
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
20 |
As packaging density increases, focus shifts to SSI and MSI chips
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
21 |
A two-unit parallel redundant system with three modes and bivariate exponential lifetimes
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
22 |
Automated inspection of wafer patterns with applications in stepping, projection and direct-write lithography
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
23 |
Band bending variation of the Si(111) surface during its thermal oxidation
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
24 |
Base-buried layer isolation process for digital LSI circuit
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
25 |
Bibliography of literature on chemical systems reliability
|
Dhillon, Balbir S. |
|
1984 |
24 |
6 |
p. 1087-1093 7 p. |
article |
26 |
Bipolar gate array delivers fast signal processing
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
27 |
CAE systems include actual IC to avoid simulation obstacle
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
28 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1984 |
24 |
6 |
p. 1007-1008 2 p. |
article |
29 |
Changes in breakdown characteristics of planar Al/n-Si Schottky diodes during the postmetallization heat treatment
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
30 |
Characterization of silicon by ion beam techniques
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
31 |
CICC ranges from floppy-dish controllers to analog custom arrays, laser probing
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
32 |
Clean rooms: the common sense approach to effectiveness
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
33 |
C-MOS. A designer's dream with the best yet to come
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
34 |
C-MOS and bipolar technologies are more partners than rivals
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
35 |
C-MOS challenges bipolars in static-RAM race
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
36 |
C-MOS offers alternatives to linear-IC design
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
37 |
C-MOS paces development of application-specific circuits
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
38 |
Comparison of two unit cold standby reliability models with three types of repair facilities
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
39 |
Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
40 |
Contamination control: new dimensions in VLSI manufacturing
|
|
|
1984 |
24 |
6 |
p. 1099-1100 2 p. |
article |
41 |
Control of polysilicon film properties
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
42 |
Core excitons in Si x Ge 1−x alloys
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
43 |
Cost analysis of a 3-state 2-unit repairable system
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
44 |
Cost-benefit analysis of a 2-unit cold standby system subject to slow switch
|
Gopalan, M.N. |
|
1984 |
24 |
6 |
p. 1019-1021 3 p. |
article |
45 |
Cost function analysis of a 3-state repairable system
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
46 |
Deposition and patterning of the tungsten and tantalum polycides
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
47 |
Designing built-in test for microprocessors
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
48 |
Dielectric breakdown of gate insulator due to reactive ion etching
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
49 |
Donor-acceptor pair capture cross-section for highly excited electrons in polar semiconductors
|
|
|
1984 |
24 |
6 |
p. 1103-1104 2 p. |
article |
50 |
Dry etching induced damage in Si and GaAs
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
51 |
Dynamic-RAM fabrication poised for continuing C-H-MOS invasion
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
52 |
EE-PROMs open new application areas to the design engineer
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
53 |
Effective lifetimes in high quality silicon devices
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
54 |
Electrical characteristics of r.f.-sputtered CdTe thin-films for photovoltaic applications
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
55 |
Electron-beam customization, repair and testing of wafer-scale circuits
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
56 |
Electron beam resist systems—a critical review of recent developments
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
57 |
Electronic structure of defects in amorphous silicon
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
58 |
Europeans debate tariff on ICs
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
59 |
Examination of thick-films using modern surface analytical techniques
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
60 |
Fail-safe rapid-transit engineering ensures reliability, passenger safety
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
61 |
Failures induced by electromigration in ECL 100k devices
|
|
|
1984 |
24 |
6 |
p. 1095- 1 p. |
article |
62 |
Fast C-MOS logic bids for TTL sockets in most systems
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
63 |
Fast C-MOS logic bids for TTL sockets in most systems
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
64 |
Fault alignment exclusion for memory using address permutation
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
65 |
Fault-tolerant design techniques for semiconductor memory applications
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
66 |
Fault-tolerant memory simulator
|
|
|
1984 |
24 |
6 |
p. 1097- 1 p. |
article |
67 |
Flexible test systems cut costs and hike production-line turn-arounds
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
68 |
Focused ion beams in wafer processing
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
69 |
Focused ion beam technology: reviewing applications research
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
70 |
Fractional duration before first failure—A useful index and an analytical tool
|
Singh, C. |
|
1984 |
24 |
6 |
p. 1077-1085 9 p. |
article |
71 |
From a seasoned consumer base, Japanese C-MOS moves to higher levels
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
72 |
GaAs process effluent control
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
73 |
Growth and characterization of the heterojunction and quantum-well of GaInAs-InP obtained by LP-MOCVD
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
74 |
High field transport in GaAs, InP and InAs
|
|
|
1984 |
24 |
6 |
p. 1104-1105 2 p. |
article |
75 |
Improved contamination control in semiconductor manufacturing facilities
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
76 |
In-situ X-ray diffraction study of melting in gold contacts to gallium arsenide
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
77 |
Instruments with wafer—mapping capability
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
78 |
Integrated circuit design verification tools
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
79 |
Linear IC technology can withstand over 400 volts
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
80 |
Low pressure chemical vapor deposition of tungsten silicide
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
81 |
Management of AlCl3 in plasma etching aluminum and its alloys
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
82 |
Metallization of plastics by magnetron sputtering for application of membrane switching
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
83 |
Methods of checking printed circuits
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
84 |
Methods of surface preparation for some A3B5 semiconductor compounds
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
85 |
Modeling of discrete semiconductor devices
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
86 |
Modular approach to C-MOS technology tailors process to application
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
87 |
MOS technology for VLSI
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
88 |
Multilayer resist processes and alternatives
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
89 |
New analytical models for logistics support cost and life cycle cost vs reliability function
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
90 |
Noise investigations on thick film resistors
|
|
|
1984 |
24 |
6 |
p. 1105- 1 p. |
article |
91 |
On the horizon: fast chips quickly
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
92 |
On use of power function in the life-time analysis
|
Dharmadhikari, A.D. |
|
1984 |
24 |
6 |
p. 1035-1037 3 p. |
article |
93 |
Optimizing wafer processing via statistical design
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
94 |
Particle measurements in medium-current ion implanters
|
|
|
1984 |
24 |
6 |
p. 1108- 1 p. |
article |
95 |
Particulate contamination and device performance
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
96 |
Personal-computer software controls memory and array programming
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
97 |
Photoresist particle control for VLSI microlithography
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
98 |
Physics of ion beam wafer processing
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
99 |
Planning of aging experiments for semiconductor devices by means of the assurance test matrix
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
100 |
Plasma effluent etching: selective and non-damaging
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
101 |
Positive photoresist polymerization through pulsed photomagnetic curing
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
102 |
Power bipolar devices
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
103 |
Power M.O.S. devices
|
|
|
1984 |
24 |
6 |
p. 1096- 1 p. |
article |
104 |
Practical approach to monitoring of implanted layers
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
105 |
Practical aspects of microfabrication in the 100 nm regime
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
106 |
Pressure coefficients of band gaps in semiconductors
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
107 |
Process and device modeling for VLSI
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
108 |
Production issues in ion implantation
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
109 |
Production RIE—I. Selective dielectric etching
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
110 |
Properties of metal-semiconductor contacts—II. Numerical solutions for intrinsic material
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
111 |
Purifying Si and SIO2 surfaces with hydrogen peroxide
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
112 |
Rapid thermal processing of titanium silicide films
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
113 |
Reliability and availability analysis of an n-unit outdoor power system subject to adjustable repair facility
|
Natesan, J. |
|
1984 |
24 |
6 |
p. 1039-1043 5 p. |
article |
114 |
Reliability and availability analysis of on surface transit systems
|
Dhillon, Balbir S. |
|
1984 |
24 |
6 |
p. 1029-1033 5 p. |
article |
115 |
Reliability and maintainability of a multicomponent series-parallel system with simultaneous failure and repair priorities
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
116 |
Reliability problems with VLSI
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
117 |
Reliability with imperfect diagnostics
|
White, Allen L. |
|
1984 |
24 |
6 |
p. 1069-1076 8 p. |
article |
118 |
R & M analysis techniques for fault-tolerant systems
|
|
|
1984 |
24 |
6 |
p. 1096-1097 2 p. |
article |
119 |
Scratch-profiles study in thin films using SEM and EDS
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
120 |
Selective plasma etching of polysilicon
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
121 |
Selective reactive ion etching of silicon dioxide
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
122 |
SEM/EDX analyses of some interactions between thick film resistors and dielectrics
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
123 |
Semiconductor manufacturing in the United Kingdom
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
124 |
Semicon West '84. The challenge: automating the industry
|
|
|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |
125 |
Silica liners extend life of diffusion tubes
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
126 |
Simulation properties of the Bayesian and maximum likelihood estimators of availability
|
Kuo, Way |
|
1984 |
24 |
6 |
p. 1057-1068 12 p. |
article |
127 |
Single GaAs chip holds circuitry for TV reception
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
128 |
Solder pastes for microelectronics
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
129 |
Some effects at ion beam modification of polymethyl methacrylate
|
|
|
1984 |
24 |
6 |
p. 1107- 1 p. |
article |
130 |
Some microwave properties of high-speed monolithic ICs
|
|
|
1984 |
24 |
6 |
p. 1102-1103 2 p. |
article |
131 |
Spectroscopic studies of fluorescent emission in plasma etching of Si and SiO2 and the mechanism of gas-surface interactions
|
|
|
1984 |
24 |
6 |
p. 1100-1101 2 p. |
article |
132 |
Stepper pattern size errors at one micron
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
133 |
Stochastic behaviour of a single server n-unit pulverizer system with common-cause failures and general maintenance
|
Natesan, J. |
|
1984 |
24 |
6 |
p. 1045-1055 11 p. |
article |
134 |
Stress-induced splitting of the conduction bands of GaAs and GaSb
|
|
|
1984 |
24 |
6 |
p. 1104- 1 p. |
article |
135 |
Surfaces, science…fact, not fiction
|
|
|
1984 |
24 |
6 |
p. 1098-1099 2 p. |
article |
136 |
Tactical air war: a SIMSCRIPT model
|
|
|
1984 |
24 |
6 |
p. 1095- 1 p. |
article |
137 |
Techniques of low pressure chemical vapor deposition
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
138 |
The growth of high purity GaAs by molecular beam epitaxy in diffusion pumped systems
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
139 |
The hypergeometric distribution model for predicting the reliability of softwares
|
|
|
1984 |
24 |
6 |
p. 1098- 1 p. |
article |
140 |
The reliability of weather forecasting
|
|
|
1984 |
24 |
6 |
p. 1095- 1 p. |
article |
141 |
Thermal evaluation of VLSI packages using test chips—a critical review
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
142 |
The role of inorganic materials in dry-processed resist technology
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
143 |
The use of the non-contacting temperature measuring techniques in the early detection of hidden faults in electronic components
|
|
|
1984 |
24 |
6 |
p. 1095- 1 p. |
article |
144 |
Thin-film transistors drive pixels singly
|
|
|
1984 |
24 |
6 |
p. 1106- 1 p. |
article |
145 |
Title section, volume contents and author index for volume 24, 1984
|
|
|
1984 |
24 |
6 |
p. i-x nvt p. |
article |
146 |
Topological optimization of distributed computer networks subject to reliability constraints
|
Zabludowski, Antoni |
|
1984 |
24 |
6 |
p. 1023-1027 5 p. |
article |
147 |
Transition to one micron technology: part 1
|
|
|
1984 |
24 |
6 |
p. 1102- 1 p. |
article |
148 |
Ultrahigh-efficiency membrane filters for semiconductor process gases
|
|
|
1984 |
24 |
6 |
p. 1100- 1 p. |
article |
149 |
Uniform plasma etching of printed circuit boards
|
|
|
1984 |
24 |
6 |
p. 1101- 1 p. |
article |
150 |
VLSI circuit design reaches the level of architectural description
|
|
|
1984 |
24 |
6 |
p. 1103- 1 p. |
article |
151 |
VLSI testers ramp up capabilities for mixed-signal chips and hybrids
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1984 |
24 |
6 |
p. 1102- 1 p. |
article |
152 |
VLSI test gear keeps pace with chip advances
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1984 |
24 |
6 |
p. 1097- 1 p. |
article |
153 |
Wafer contour map helps correlate yield, process variables
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|
1984 |
24 |
6 |
p. 1099- 1 p. |
article |