| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active trimming of hybrid integrated circuits
|
|
|
1984
|
24 |
6 |
p. 1105-1106
2 p.
|
artikel
|
| 2 |
A current conduction mechanism in laser recrystallized silicon metal-oxide-semiconductor transistors
|
|
|
1984
|
24 |
6 |
p. 1106-1107
2 p.
|
artikel
|
| 3 |
A general-purpose memory reliability simulator
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 4 |
Air and nitrogen-fireable multilayer systems: materials and performance characteristics. Part 1
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 5 |
Air and nitrogen-fireable multilayer systems: materials and performance characteristics. Part II
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 6 |
Alignment signals for electron beam lithography
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 7 |
A merger of CAD and CAT is breaking the VLSI test bottleneck
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 8 |
Ammonium persulfate as a stripping and cleaning oxidant
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 9 |
A modeling technique for characterizing ion-implanted material using C-V and DLTS data
|
|
|
1984
|
24 |
6 |
p. 1108-
1 p.
|
artikel
|
| 10 |
An alternative approach towards the design of control units
|
Jain, Rajiv
|
|
1984
|
24 |
6 |
p. 1009-1012
4 p.
|
artikel
|
| 11 |
Analysis of thin film fire sensors
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 12 |
8- and 16-bit processors round out high-level C-MOS architecture options
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 13 |
A new heuristic approach for redundancy optimization problem
|
Murty, V.Dakshina
|
|
1984
|
24 |
6 |
p. 1013-1017
5 p.
|
artikel
|
| 14 |
An experimental approach to vapor phase reflow solder assembly
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 15 |
An integrated missile reliability growth program
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 16 |
A novel memory device for VLSI E2 PROM
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 17 |
Application of electron beams in thermal processing of semiconductor materials and devices
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 18 |
A reliability growth model
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 19 |
A review of thick film microwave integrated circuit technology
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 20 |
As packaging density increases, focus shifts to SSI and MSI chips
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 21 |
A two-unit parallel redundant system with three modes and bivariate exponential lifetimes
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 22 |
Automated inspection of wafer patterns with applications in stepping, projection and direct-write lithography
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 23 |
Band bending variation of the Si(111) surface during its thermal oxidation
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 24 |
Base-buried layer isolation process for digital LSI circuit
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 25 |
Bibliography of literature on chemical systems reliability
|
Dhillon, Balbir S.
|
|
1984
|
24 |
6 |
p. 1087-1093
7 p.
|
artikel
|
| 26 |
Bipolar gate array delivers fast signal processing
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 27 |
CAE systems include actual IC to avoid simulation obstacle
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 28 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1984
|
24 |
6 |
p. 1007-1008
2 p.
|
artikel
|
| 29 |
Changes in breakdown characteristics of planar Al/n-Si Schottky diodes during the postmetallization heat treatment
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 30 |
Characterization of silicon by ion beam techniques
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 31 |
CICC ranges from floppy-dish controllers to analog custom arrays, laser probing
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 32 |
Clean rooms: the common sense approach to effectiveness
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 33 |
C-MOS. A designer's dream with the best yet to come
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 34 |
C-MOS and bipolar technologies are more partners than rivals
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 35 |
C-MOS challenges bipolars in static-RAM race
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 36 |
C-MOS offers alternatives to linear-IC design
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 37 |
C-MOS paces development of application-specific circuits
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 38 |
Comparison of two unit cold standby reliability models with three types of repair facilities
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 39 |
Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 40 |
Contamination control: new dimensions in VLSI manufacturing
|
|
|
1984
|
24 |
6 |
p. 1099-1100
2 p.
|
artikel
|
| 41 |
Control of polysilicon film properties
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 42 |
Core excitons in Si x Ge 1−x alloys
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 43 |
Cost analysis of a 3-state 2-unit repairable system
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 44 |
Cost-benefit analysis of a 2-unit cold standby system subject to slow switch
|
Gopalan, M.N.
|
|
1984
|
24 |
6 |
p. 1019-1021
3 p.
|
artikel
|
| 45 |
Cost function analysis of a 3-state repairable system
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 46 |
Deposition and patterning of the tungsten and tantalum polycides
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 47 |
Designing built-in test for microprocessors
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 48 |
Dielectric breakdown of gate insulator due to reactive ion etching
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 49 |
Donor-acceptor pair capture cross-section for highly excited electrons in polar semiconductors
|
|
|
1984
|
24 |
6 |
p. 1103-1104
2 p.
|
artikel
|
| 50 |
Dry etching induced damage in Si and GaAs
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 51 |
Dynamic-RAM fabrication poised for continuing C-H-MOS invasion
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 52 |
EE-PROMs open new application areas to the design engineer
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 53 |
Effective lifetimes in high quality silicon devices
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 54 |
Electrical characteristics of r.f.-sputtered CdTe thin-films for photovoltaic applications
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 55 |
Electron-beam customization, repair and testing of wafer-scale circuits
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 56 |
Electron beam resist systems—a critical review of recent developments
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 57 |
Electronic structure of defects in amorphous silicon
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 58 |
Europeans debate tariff on ICs
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 59 |
Examination of thick-films using modern surface analytical techniques
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 60 |
Fail-safe rapid-transit engineering ensures reliability, passenger safety
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 61 |
Failures induced by electromigration in ECL 100k devices
|
|
|
1984
|
24 |
6 |
p. 1095-
1 p.
|
artikel
|
| 62 |
Fast C-MOS logic bids for TTL sockets in most systems
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 63 |
Fast C-MOS logic bids for TTL sockets in most systems
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 64 |
Fault alignment exclusion for memory using address permutation
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 65 |
Fault-tolerant design techniques for semiconductor memory applications
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 66 |
Fault-tolerant memory simulator
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 67 |
Flexible test systems cut costs and hike production-line turn-arounds
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 68 |
Focused ion beams in wafer processing
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 69 |
Focused ion beam technology: reviewing applications research
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 70 |
Fractional duration before first failure—A useful index and an analytical tool
|
Singh, C.
|
|
1984
|
24 |
6 |
p. 1077-1085
9 p.
|
artikel
|
| 71 |
From a seasoned consumer base, Japanese C-MOS moves to higher levels
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 72 |
GaAs process effluent control
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 73 |
Growth and characterization of the heterojunction and quantum-well of GaInAs-InP obtained by LP-MOCVD
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 74 |
High field transport in GaAs, InP and InAs
|
|
|
1984
|
24 |
6 |
p. 1104-1105
2 p.
|
artikel
|
| 75 |
Improved contamination control in semiconductor manufacturing facilities
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 76 |
In-situ X-ray diffraction study of melting in gold contacts to gallium arsenide
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 77 |
Instruments with wafer—mapping capability
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 78 |
Integrated circuit design verification tools
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 79 |
Linear IC technology can withstand over 400 volts
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 80 |
Low pressure chemical vapor deposition of tungsten silicide
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 81 |
Management of AlCl3 in plasma etching aluminum and its alloys
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 82 |
Metallization of plastics by magnetron sputtering for application of membrane switching
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 83 |
Methods of checking printed circuits
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 84 |
Methods of surface preparation for some A3B5 semiconductor compounds
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 85 |
Modeling of discrete semiconductor devices
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 86 |
Modular approach to C-MOS technology tailors process to application
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 87 |
MOS technology for VLSI
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 88 |
Multilayer resist processes and alternatives
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 89 |
New analytical models for logistics support cost and life cycle cost vs reliability function
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 90 |
Noise investigations on thick film resistors
|
|
|
1984
|
24 |
6 |
p. 1105-
1 p.
|
artikel
|
| 91 |
On the horizon: fast chips quickly
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 92 |
On use of power function in the life-time analysis
|
Dharmadhikari, A.D.
|
|
1984
|
24 |
6 |
p. 1035-1037
3 p.
|
artikel
|
| 93 |
Optimizing wafer processing via statistical design
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 94 |
Particle measurements in medium-current ion implanters
|
|
|
1984
|
24 |
6 |
p. 1108-
1 p.
|
artikel
|
| 95 |
Particulate contamination and device performance
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 96 |
Personal-computer software controls memory and array programming
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 97 |
Photoresist particle control for VLSI microlithography
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 98 |
Physics of ion beam wafer processing
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 99 |
Planning of aging experiments for semiconductor devices by means of the assurance test matrix
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 100 |
Plasma effluent etching: selective and non-damaging
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 101 |
Positive photoresist polymerization through pulsed photomagnetic curing
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 102 |
Power bipolar devices
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 103 |
Power M.O.S. devices
|
|
|
1984
|
24 |
6 |
p. 1096-
1 p.
|
artikel
|
| 104 |
Practical approach to monitoring of implanted layers
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 105 |
Practical aspects of microfabrication in the 100 nm regime
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 106 |
Pressure coefficients of band gaps in semiconductors
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 107 |
Process and device modeling for VLSI
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 108 |
Production issues in ion implantation
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 109 |
Production RIE—I. Selective dielectric etching
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 110 |
Properties of metal-semiconductor contacts—II. Numerical solutions for intrinsic material
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 111 |
Purifying Si and SIO2 surfaces with hydrogen peroxide
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 112 |
Rapid thermal processing of titanium silicide films
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 113 |
Reliability and availability analysis of an n-unit outdoor power system subject to adjustable repair facility
|
Natesan, J.
|
|
1984
|
24 |
6 |
p. 1039-1043
5 p.
|
artikel
|
| 114 |
Reliability and availability analysis of on surface transit systems
|
Dhillon, Balbir S.
|
|
1984
|
24 |
6 |
p. 1029-1033
5 p.
|
artikel
|
| 115 |
Reliability and maintainability of a multicomponent series-parallel system with simultaneous failure and repair priorities
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 116 |
Reliability problems with VLSI
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 117 |
Reliability with imperfect diagnostics
|
White, Allen L.
|
|
1984
|
24 |
6 |
p. 1069-1076
8 p.
|
artikel
|
| 118 |
R & M analysis techniques for fault-tolerant systems
|
|
|
1984
|
24 |
6 |
p. 1096-1097
2 p.
|
artikel
|
| 119 |
Scratch-profiles study in thin films using SEM and EDS
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 120 |
Selective plasma etching of polysilicon
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 121 |
Selective reactive ion etching of silicon dioxide
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 122 |
SEM/EDX analyses of some interactions between thick film resistors and dielectrics
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 123 |
Semiconductor manufacturing in the United Kingdom
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 124 |
Semicon West '84. The challenge: automating the industry
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
| 125 |
Silica liners extend life of diffusion tubes
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 126 |
Simulation properties of the Bayesian and maximum likelihood estimators of availability
|
Kuo, Way
|
|
1984
|
24 |
6 |
p. 1057-1068
12 p.
|
artikel
|
| 127 |
Single GaAs chip holds circuitry for TV reception
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 128 |
Solder pastes for microelectronics
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 129 |
Some effects at ion beam modification of polymethyl methacrylate
|
|
|
1984
|
24 |
6 |
p. 1107-
1 p.
|
artikel
|
| 130 |
Some microwave properties of high-speed monolithic ICs
|
|
|
1984
|
24 |
6 |
p. 1102-1103
2 p.
|
artikel
|
| 131 |
Spectroscopic studies of fluorescent emission in plasma etching of Si and SiO2 and the mechanism of gas-surface interactions
|
|
|
1984
|
24 |
6 |
p. 1100-1101
2 p.
|
artikel
|
| 132 |
Stepper pattern size errors at one micron
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 133 |
Stochastic behaviour of a single server n-unit pulverizer system with common-cause failures and general maintenance
|
Natesan, J.
|
|
1984
|
24 |
6 |
p. 1045-1055
11 p.
|
artikel
|
| 134 |
Stress-induced splitting of the conduction bands of GaAs and GaSb
|
|
|
1984
|
24 |
6 |
p. 1104-
1 p.
|
artikel
|
| 135 |
Surfaces, science…fact, not fiction
|
|
|
1984
|
24 |
6 |
p. 1098-1099
2 p.
|
artikel
|
| 136 |
Tactical air war: a SIMSCRIPT model
|
|
|
1984
|
24 |
6 |
p. 1095-
1 p.
|
artikel
|
| 137 |
Techniques of low pressure chemical vapor deposition
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 138 |
The growth of high purity GaAs by molecular beam epitaxy in diffusion pumped systems
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 139 |
The hypergeometric distribution model for predicting the reliability of softwares
|
|
|
1984
|
24 |
6 |
p. 1098-
1 p.
|
artikel
|
| 140 |
The reliability of weather forecasting
|
|
|
1984
|
24 |
6 |
p. 1095-
1 p.
|
artikel
|
| 141 |
Thermal evaluation of VLSI packages using test chips—a critical review
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 142 |
The role of inorganic materials in dry-processed resist technology
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 143 |
The use of the non-contacting temperature measuring techniques in the early detection of hidden faults in electronic components
|
|
|
1984
|
24 |
6 |
p. 1095-
1 p.
|
artikel
|
| 144 |
Thin-film transistors drive pixels singly
|
|
|
1984
|
24 |
6 |
p. 1106-
1 p.
|
artikel
|
| 145 |
Title section, volume contents and author index for volume 24, 1984
|
|
|
1984
|
24 |
6 |
p. i-x
nvt p.
|
artikel
|
| 146 |
Topological optimization of distributed computer networks subject to reliability constraints
|
Zabludowski, Antoni
|
|
1984
|
24 |
6 |
p. 1023-1027
5 p.
|
artikel
|
| 147 |
Transition to one micron technology: part 1
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 148 |
Ultrahigh-efficiency membrane filters for semiconductor process gases
|
|
|
1984
|
24 |
6 |
p. 1100-
1 p.
|
artikel
|
| 149 |
Uniform plasma etching of printed circuit boards
|
|
|
1984
|
24 |
6 |
p. 1101-
1 p.
|
artikel
|
| 150 |
VLSI circuit design reaches the level of architectural description
|
|
|
1984
|
24 |
6 |
p. 1103-
1 p.
|
artikel
|
| 151 |
VLSI testers ramp up capabilities for mixed-signal chips and hybrids
|
|
|
1984
|
24 |
6 |
p. 1102-
1 p.
|
artikel
|
| 152 |
VLSI test gear keeps pace with chip advances
|
|
|
1984
|
24 |
6 |
p. 1097-
1 p.
|
artikel
|
| 153 |
Wafer contour map helps correlate yield, process variables
|
|
|
1984
|
24 |
6 |
p. 1099-
1 p.
|
artikel
|
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