nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A Boolean algebra method for reliability calculations
|
|
|
1984 |
24 |
4 |
p. 809- 1 p. |
artikel |
2 |
A complex three-unit system
|
Sarma, Y.V.S. |
|
1984 |
24 |
4 |
p. 661-662 2 p. |
artikel |
3 |
A data-base for IC mask making
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
4 |
A distribution-free upper confidence bound for PR (Y < X): an application to stress-strength models
|
|
|
1984 |
24 |
4 |
p. 810-811 2 p. |
artikel |
5 |
A generalization of Freund's model for a repairable paired component based on a bivariate Geiger Muller (G.M.) counter
|
Biswas, Suddhendu |
|
1984 |
24 |
4 |
p. 671-675 5 p. |
artikel |
6 |
A graphical method for optimal reliability allocation
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
7 |
A k-out-of-N:G redundant system with cold standby units and common-cause failures
|
Chung, Who Kee |
|
1984 |
24 |
4 |
p. 691-695 5 p. |
artikel |
8 |
A low-leakage VLSI CMOS/SOS process with thin epilayers
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
9 |
Aluminum wire for thermosonic ball bonding in semiconductor devices
|
|
|
1984 |
24 |
4 |
p. 813- 1 p. |
artikel |
10 |
A modified Kolmogorov-Smirnov test for Weibull distributions with unknown location and scale parameters
|
|
|
1984 |
24 |
4 |
p. 809- 1 p. |
artikel |
11 |
Amorphous BN films produced in a double-plasma reactor for semiconductor applications
|
|
|
1984 |
24 |
4 |
p. 820- 1 p. |
artikel |
12 |
Amorphous metallic alloys in semiconductor contact metallizations
|
|
|
1984 |
24 |
4 |
p. 817- 1 p. |
artikel |
13 |
A multicomponent two-unit cold standby system with three modes
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
14 |
A multi-standby multi-failure mode system with repair and replacement policy
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
15 |
A multistate system with two repair distributions
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
16 |
An AES, SAM and RHEED study of InP (110) subjected to ion bombardment and annealing treatments
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
17 |
Analysis of a two-engine aeroplane model with two types of failure and preventive maintenance
|
Goel, L.R. |
|
1984 |
24 |
4 |
p. 663-666 4 p. |
artikel |
18 |
Analysis of a two-unit parallel redundancy with an imperfect switch
|
|
|
1984 |
24 |
4 |
p. 809- 1 p. |
artikel |
19 |
Analysis of leakage currents in CMOS/SOS devices
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
20 |
Analysis of surface mount thermal and thermal stress performance
|
|
|
1984 |
24 |
4 |
p. 806- 1 p. |
artikel |
21 |
An analytical method for determining intrinsic drain/source resistance of lightly doped drain (LDD) devices
|
|
|
1984 |
24 |
4 |
p. 819- 1 p. |
artikel |
22 |
A new chip carrier for high performance applications: integrated decoupling capacitor chip carrier (IDCCC)
|
|
|
1984 |
24 |
4 |
p. 812- 1 p. |
artikel |
23 |
A new frequency independent attenuator in distributed multilayer thin film microsystem
|
|
|
1984 |
24 |
4 |
p. 820- 1 p. |
artikel |
24 |
A new ion dose uniformity measurement technique
|
|
|
1984 |
24 |
4 |
p. 825- 1 p. |
artikel |
25 |
An ion milled coplanar SOS technology
|
|
|
1984 |
24 |
4 |
p. 813- 1 p. |
artikel |
26 |
A normal approximation to distributions of likelihood ratio statistics in life testing, reliability and multivariate analysis of variance
|
Singh, N. |
|
1984 |
24 |
4 |
p. 697-706 10 p. |
artikel |
27 |
A normalized analytical solution for the capacitance associated with uniformly doped semiconductors at equilibrium
|
|
|
1984 |
24 |
4 |
p. 818- 1 p. |
artikel |
28 |
A novel electroless technique for copper metallization of alumina substrates
|
|
|
1984 |
24 |
4 |
p. 821- 1 p. |
artikel |
29 |
Applications of excimer lasers in microelectronics
|
|
|
1984 |
24 |
4 |
p. 825- 1 p. |
artikel |
30 |
A process-compatible electron beam direct write system
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
31 |
A process for two-layer gold IC metallization
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
32 |
A pruned tree approach to reliability computation
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
33 |
A re-examination of practical performance limits of scaled n-channel and p-channel MOS devices for VLSI
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
34 |
A simple method of photomask yield optimization by defect inspection
|
Gupta, S.N. |
|
1984 |
24 |
4 |
p. 625-627 3 p. |
artikel |
35 |
A single unit multicomponent system subject to various types of failures
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
36 |
Aspects of European and Japanese quality management
|
|
|
1984 |
24 |
4 |
p. 805- 1 p. |
artikel |
37 |
A strategy for rule verification shrinks LSI layouts
|
|
|
1984 |
24 |
4 |
p. 812- 1 p. |
artikel |
38 |
A study of grown-in impurities in silicon by deep-level transient spectroscopy
|
|
|
1984 |
24 |
4 |
p. 818- 1 p. |
artikel |
39 |
Automated measurement system for the investigation of surface state distribution
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
40 |
Availability analysis of transit systems
|
Dhillon, Balbir S. |
|
1984 |
24 |
4 |
p. 761-768 8 p. |
artikel |
41 |
Band structure, impurity levels and Stark effects in superlattices
|
|
|
1984 |
24 |
4 |
p. 818- 1 p. |
artikel |
42 |
Beam-recrystallized silicon-on-insulator films: can devices live with grain boundaries?
|
|
|
1984 |
24 |
4 |
p. 824- 1 p. |
artikel |
43 |
Behind the “bathtub”-curve a new model and its consequences
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
44 |
Bipolar silicon power is crucial to communications systems
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
45 |
Calculations of systems unreliability by algebraic manipulation of failure event
|
Hasanuddin Ahmad, S. |
|
1984 |
24 |
4 |
p. 793-799 7 p. |
artikel |
46 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1984 |
24 |
4 |
p. 599-603 5 p. |
artikel |
47 |
Carrier lifetime in (Al, Ga)As epilayers and double heterostructure lasers grown with metal-organic vapour-phase epitaxy and liquid-phase epitaxy
|
|
|
1984 |
24 |
4 |
p. 817- 1 p. |
artikel |
48 |
Characteristics and analysis of instability induced by secondary slow trapping in scaled CMOS devices
|
|
|
1984 |
24 |
4 |
p. 817- 1 p. |
artikel |
49 |
Characterization of ion implanted silicon—applications for IC process control
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
50 |
Characterization of Se implanted layers for GaAs FETS
|
|
|
1984 |
24 |
4 |
p. 824- 1 p. |
artikel |
51 |
CHMOS improves system efficiency
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
52 |
Clustering VAX superminicomputers into large multiprocessor systems
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
53 |
C-MOS process reduces chip size as much as a third
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
54 |
CMOS regenerative logic circuits
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
55 |
Conference Report The IEEE reliability and maintainability symposium 1984
|
Jacobs, Richard M. |
|
1984 |
24 |
4 |
p. 613-616 4 p. |
artikel |
56 |
Cost based reliability growth apportionment
|
|
|
1984 |
24 |
4 |
p. 809- 1 p. |
artikel |
57 |
Cost-benefit analysis of a one-server two-unit system subject to two types of failure
|
|
|
1984 |
24 |
4 |
p. 809-810 2 p. |
artikel |
58 |
Cost-benefit analysis of a 1-server n-unit system subject to general repair and inspection
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
59 |
Cost-effective reliable software engineering and development
|
Reddi, Arumalla V. |
|
1984 |
24 |
4 |
p. 677-682 6 p. |
artikel |
60 |
Current methods for silicon wafer characterization
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
61 |
Debugging station is easily reconfigured for emulation tasks
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
62 |
Defect analysis system speeds test and repair of redundant memories
|
|
|
1984 |
24 |
4 |
p. 806- 1 p. |
artikel |
63 |
Defect-free silicon sought by Pentagon for VHSIC program
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
64 |
Deposition equipment
|
|
|
1984 |
24 |
4 |
p. 813- 1 p. |
artikel |
65 |
Designing solder paste materials to attach surface mounted devices
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
66 |
Design of a high performance DIP-like pin array package for logic devices
|
|
|
1984 |
24 |
4 |
p. 813-814 2 p. |
artikel |
67 |
Design of an accurate production E-beam system
|
|
|
1984 |
24 |
4 |
p. 822-823 2 p. |
artikel |
68 |
Design of testable logic circuits
|
G.W.A.D., |
|
1984 |
24 |
4 |
p. 801- 1 p. |
artikel |
69 |
Design parameters of four-terminal distributed thin film integrated band-reject filter
|
|
|
1984 |
24 |
4 |
p. 820- 1 p. |
artikel |
70 |
Detroit unveils sophisticated electronics
|
|
|
1984 |
24 |
4 |
p. 811- 1 p. |
artikel |
71 |
Development of a reliability strategy for new IC component family and process
|
|
|
1984 |
24 |
4 |
p. 805- 1 p. |
artikel |
72 |
Die bonding and package sealing materials
|
|
|
1984 |
24 |
4 |
p. 814-815 2 p. |
artikel |
73 |
Diffusion, ion implantation and annealing
|
|
|
1984 |
24 |
4 |
p. 824- 1 p. |
artikel |
74 |
Direct attachment of leadless chip carriers to organic matrix printed wiring boards
|
|
|
1984 |
24 |
4 |
p. 812- 1 p. |
artikel |
75 |
Direct-write electron beam system
|
|
|
1984 |
24 |
4 |
p. 822- 1 p. |
artikel |
76 |
E-beam system metrology
|
|
|
1984 |
24 |
4 |
p. 822- 1 p. |
artikel |
77 |
EBIC and LBIC techniques for characterization of reverse biased power devices
|
|
|
1984 |
24 |
4 |
p. 824- 1 p. |
artikel |
78 |
Economics of multiple site testing of PCBs
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
79 |
Editorial
|
G.W.A.D., |
|
1984 |
24 |
4 |
p. 607-612 6 p. |
artikel |
80 |
EE-PROM adds on-chip flexibility
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
81 |
Effect of HCl and Cl2 on Pd inlay coupons and Pd connector contacts
|
|
|
1984 |
24 |
4 |
p. 806-807 2 p. |
artikel |
82 |
Effect of pad capacitance on the notch frequency of the MOS distributed RC (MOS-RC) notch network
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
83 |
Effects of accelerated temperature testing on the low-frequency noise of planar NPN transistors
|
|
|
1984 |
24 |
4 |
p. 806- 1 p. |
artikel |
84 |
Electrical characterization of insulator-semiconductor interface states
|
|
|
1984 |
24 |
4 |
p. 817- 1 p. |
artikel |
85 |
Electrical characterization of ion-implanted silicon-on-sapphire
|
|
|
1984 |
24 |
4 |
p. 825- 1 p. |
artikel |
86 |
Electrical design of a high speed computer packaging system
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
87 |
Electrical properties of gallium arsenide ingots
|
|
|
1984 |
24 |
4 |
p. 818- 1 p. |
artikel |
88 |
Electron-beam recrystallized polysilicon on silicon dioxide
|
|
|
1984 |
24 |
4 |
p. 825- 1 p. |
artikel |
89 |
Electronic structure calculations of V2 + O2 complexes in silicon
|
|
|
1984 |
24 |
4 |
p. 818- 1 p. |
artikel |
90 |
EL systems: high throughput electron beam lithography tools
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
91 |
Enumeration of all 2-trees in a graph through petri nets
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
92 |
Etching systems
|
|
|
1984 |
24 |
4 |
p. 813- 1 p. |
artikel |
93 |
Fabrication of damage free micropatterns in silicon
|
Gupta, R.P. |
|
1984 |
24 |
4 |
p. 623-624 2 p. |
artikel |
94 |
Facing the headaches of early failures: a state-of-the-art review of burn-in decisions
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
95 |
Failure physics of integrated circuits—a review
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
96 |
Fatigue life of leadless chip carrier solder joints during power cycling
|
|
|
1984 |
24 |
4 |
p. 806- 1 p. |
artikel |
97 |
Fault tree analysis method of a system having components of multiple failure modes
|
|
|
1984 |
24 |
4 |
p. 809- 1 p. |
artikel |
98 |
Focused ion beams in microelectronic fabrication
|
|
|
1984 |
24 |
4 |
p. 824- 1 p. |
artikel |
99 |
Full-wafer memory for colour displays has 1.5-Mb capacity
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
100 |
Generalised availability measures for a multi-unit repairable system with standby failure
|
Kapur, P.K. |
|
1984 |
24 |
4 |
p. 637-646 10 p. |
artikel |
101 |
Gold on palladium connector contacts
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
102 |
Government systems incorporate GaAs monolithics
|
|
|
1984 |
24 |
4 |
p. 811- 1 p. |
artikel |
103 |
Grain-boundary scattering and surface plasmon attenuation in noble metal films
|
|
|
1984 |
24 |
4 |
p. 821- 1 p. |
artikel |
104 |
Gunn-effect oscillators have historically had superior spectral purity compared to other solid-state microwave sources
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
105 |
High performance thick film gold conductors
|
|
|
1984 |
24 |
4 |
p. 821- 1 p. |
artikel |
106 |
High pinout IC packaging and the density advantage of surface mounting
|
|
|
1984 |
24 |
4 |
p. 812- 1 p. |
artikel |
107 |
High slew rate CMOS operational amplifier employing internal transistor compensation
|
|
|
1984 |
24 |
4 |
p. 815- 1 p. |
artikel |
108 |
High-speed reactive ion etching of silicon by the application of a confined DC bias
|
|
|
1984 |
24 |
4 |
p. 825- 1 p. |
artikel |
109 |
High-speed testing equipment essential to AMRAAM development program success
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
110 |
High technology: the key to growth
|
|
|
1984 |
24 |
4 |
p. 811- 1 p. |
artikel |
111 |
High thermal conduction package technology for flip chip devices
|
|
|
1984 |
24 |
4 |
p. 812-813 2 p. |
artikel |
112 |
High throughput variable shaped electron beam lithography
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
113 |
Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment
|
|
|
1984 |
24 |
4 |
p. 819- 1 p. |
artikel |
114 |
IC wafer fab economics and lithography equipment selection: the inextricable link
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
115 |
Improved electrical performance required for future MOS packaging
|
|
|
1984 |
24 |
4 |
p. 812- 1 p. |
artikel |
116 |
Improving the reverse recovery of power MOSFET integral diodes by electron irradiation
|
|
|
1984 |
24 |
4 |
p. 823-824 2 p. |
artikel |
117 |
Influence of anneal temperature on the mobile ion concentration in MOS structures
|
|
|
1984 |
24 |
4 |
p. 817- 1 p. |
artikel |
118 |
Inspection frequency and availability of emergency equipment
|
Anders, George J. |
|
1984 |
24 |
4 |
p. 683-690 8 p. |
artikel |
119 |
Inspection, measuring, and testing equipment
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
120 |
Insulation displacement connector reliability
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
121 |
Integrated non-uniform thin-film micro-systems of circular geometry
|
Ahmed, Kamal U. |
|
1984 |
24 |
4 |
p. 667-669 3 p. |
artikel |
122 |
Investigation of information loss mechanisms in EPROMs
|
|
|
1984 |
24 |
4 |
p. 806- 1 p. |
artikel |
123 |
Ion implantation and rapid annealing of 125mm wafers
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
124 |
Laser induced backside damage gettering
|
|
|
1984 |
24 |
4 |
p. 825- 1 p. |
artikel |
125 |
LEED evaluation of three models of the Si(100) surface
|
|
|
1984 |
24 |
4 |
p. 819- 1 p. |
artikel |
126 |
Lifetime and drift velocity analysis for electromigration in sputtered Al films, multilayers and alloys
|
|
|
1984 |
24 |
4 |
p. 820- 1 p. |
artikel |
127 |
Low temperature processed MOSFET's using laser recrystallized polycrystalline silicon films
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
128 |
Magnetron-enhanced plasma etching of silicon and silicon dioxide
|
|
|
1984 |
24 |
4 |
p. 822- 1 p. |
artikel |
129 |
Maintainability and availability calculations for series, parallel and r-out-of-n configurations
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
130 |
Manifestations of deep levels point defects in GaAs
|
|
|
1984 |
24 |
4 |
p. 816- 1 p. |
artikel |
131 |
Modelling of integrated circuit defect sensitivities
|
|
|
1984 |
24 |
4 |
p. 807- 1 p. |
artikel |
132 |
Modification to the reduction technique of Thomas Case for obtaining a simplified reliability expression
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
133 |
Molecular beam epitaxy for research and production
|
|
|
1984 |
24 |
4 |
p. 823- 1 p. |
artikel |
134 |
More than a decade of the non-saturating autoclave as a highly accelerated stress technique for evaluating the reliability of nonhermetic microelectronic components
|
|
|
1984 |
24 |
4 |
p. 806- 1 p. |
artikel |
135 |
M.S.C. centralized maintenance for transmission networks
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
136 |
Multi-standby system with repair and replacement policy
|
|
|
1984 |
24 |
4 |
p. 809- 1 p. |
artikel |
137 |
NASA eyes crystal processing in space
|
|
|
1984 |
24 |
4 |
p. 811- 1 p. |
artikel |
138 |
Network quality tester
|
|
|
1984 |
24 |
4 |
p. 808- 1 p. |
artikel |
139 |
New stencil screen developments for thick film printing
|
|
|
1984 |
24 |
4 |
p. 821- 1 p. |
artikel |
140 |
Novel IC metallization test structures for drop-in process monitors
|
|
|
1984 |
24 |
4 |
p. 814- 1 p. |
artikel |
141 |
Nucleation and growth of thin films: recent progress
|
|
|
1984 |
24 |
4 |
p. 822- 1 p. |
artikel |
142 |
On a two-unit standby redundant system with two types of failures and preventive maintenance
|
|
|
1984 |
24 |
4 |
p. 810- 1 p. |
artikel |
143 |
One method for interval estimation of Weibull shape parameter
|
Brkich, D.M. |
|
1984 |
24 |
4 |
p. 659-660 2 p. |
artikel |
144 |
On optimal maintenance of a series system
|
|
|
1984 |
24 |
4 |
p. 807-808 2 p. |
artikel |
145 |
On power line carrier communication (PLC)
|
Sherif, Yosef S. |
|
1984 |
24 |
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p. 781-791 11 p. |
artikel |
146 |
On standby redundant system with repair, post repair and preventive maintenance
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1984 |
24 |
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p. 808- 1 p. |
artikel |
147 |
Optimal allocation of cost to detectors in a two-unit series system
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Kumar, Ashok |
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1984 |
24 |
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p. 633-636 4 p. |
artikel |
148 |
Optimal scheduling of multiple preventive maintenance activities
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1984 |
24 |
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p. 810- 1 p. |
artikel |
149 |
Optimum component switching for systems that operate and idle
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Pirie, K. |
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1984 |
24 |
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p. 769-780 12 p. |
artikel |
150 |
Parallel processing interactively simulates complex VSLI logic
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1984 |
24 |
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p. 816- 1 p. |
artikel |
151 |
Parametric test system update
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1984 |
24 |
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p. 812- 1 p. |
artikel |
152 |
Performance-related dependability evaluation of supercomputer systems
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Arlat, J. |
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1984 |
24 |
4 |
p. 717-742 26 p. |
artikel |
153 |
Photoionization of impurity atoms in semiconductors in the presence of an applied electric field
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1984 |
24 |
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p. 819- 1 p. |
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154 |
Pinhole array capacitor for oxide integrity analysis
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1984 |
24 |
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p. 818- 1 p. |
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155 |
Precision fineness of grind measurement—techniques and instrumentation—for thick film pastes
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1984 |
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p. 820- 1 p. |
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156 |
Precision voltage references outgrow temperature-stabilizing ovens
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1984 |
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p. 816- 1 p. |
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157 |
Principles of laser scanning for defect and contamination detection in microfabrication
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1984 |
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p. 825- 1 p. |
artikel |
158 |
Printed board assembly cleanliness—standards, practice and reliability considerations
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1984 |
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p. 806- 1 p. |
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159 |
Printed-circuit-board assembly picks up on automation
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1984 |
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p. 806- 1 p. |
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160 |
Production of hybrid circuits and quality assurance
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1984 |
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p. 821- 1 p. |
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161 |
Protocols and network-control chips: a symbiotic relationship
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1984 |
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p. 816- 1 p. |
artikel |
162 |
Publications, notices, calls for papers, etc.
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1984 |
24 |
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p. 605- 1 p. |
artikel |
163 |
Quality assurance system and reliability testing of LSI circuits
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1984 |
24 |
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p. 807- 1 p. |
artikel |
164 |
Quality assurance with laser light and microprocessors on moving workpieces
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1984 |
24 |
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p. 823- 1 p. |
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165 |
Quality solder paste systems for use in microelectronic applications
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1984 |
24 |
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p. 816- 1 p. |
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166 |
Radiation annealing of epitaxial silver films
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1984 |
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p. 822- 1 p. |
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167 |
Rapid wafer heating: status 1983
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1984 |
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p. 814- 1 p. |
artikel |
168 |
Reactive ion beam etching of tantalum silicide for VLSI applications
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1984 |
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p. 822- 1 p. |
artikel |
169 |
Reactive-ion etching eases restrictions on materials and feature sizes
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1984 |
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p. 823- 1 p. |
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170 |
Reactive sputtering
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1984 |
24 |
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p. 820- 1 p. |
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171 |
Real time sputter deposition monitoring using glow discharge mass spectroscopy
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1984 |
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p. 814- 1 p. |
artikel |
172 |
Recent developments in the characterisation of semiconductors by transport measurements
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1984 |
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p. 817- 1 p. |
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173 |
Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous silicon
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1984 |
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p. 818- 1 p. |
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174 |
Reliability analysis of an intermittently used system
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1984 |
24 |
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p. 809- 1 p. |
artikel |
175 |
Reliability analysis of optical fibre communication systems
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1984 |
24 |
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p. 811- 1 p. |
artikel |
176 |
Reliability and maintainability data for industrial plants
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Reiche, H. |
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1984 |
24 |
4 |
p. 802- 1 p. |
artikel |
177 |
Reliability effects of fluorine contamination of aluminum bonding pads on semiconductor chips
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1984 |
24 |
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p. 805-806 2 p. |
artikel |
178 |
Reliability evaluation of systems with critical human error
|
Dhillon, Balbir S. |
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1984 |
24 |
4 |
p. 743-759 17 p. |
artikel |
179 |
Reliability prediction of microcircuits
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1984 |
24 |
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p. 809- 1 p. |
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180 |
Reliability study of a microwave Ga As field-effect transistor, by means of factorial analysis and automatic classification methods
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1984 |
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p. 805- 1 p. |
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181 |
Residual stress in thick films
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1984 |
24 |
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p. 820-821 2 p. |
artikel |
182 |
Scanning electron microscopes
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1984 |
24 |
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p. 811- 1 p. |
artikel |
183 |
Seeded bug volume for software validation
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1984 |
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p. 808- 1 p. |
artikel |
184 |
Semiconductor manufacturing in Central Europe
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1984 |
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p. 812- 1 p. |
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185 |
Semiconductor manufacturing in Thailand
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1984 |
24 |
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p. 811- 1 p. |
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186 |
Semiconductor materials and devices characterization by noise measurements
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1984 |
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p. 817- 1 p. |
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187 |
Semiconductor processing with excimer lasers
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1984 |
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p. 825- 1 p. |
artikel |
188 |
Semiconductor surface reconstruction
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1984 |
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p. 818-819 2 p. |
artikel |
189 |
Semiconductor surfaces and interfaces
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1984 |
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p. 819- 1 p. |
artikel |
190 |
s-expected number of inspections and repairs of a one-server two-unit system subject to arbitrary failure
|
Subramanyam Naidu, R. |
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1984 |
24 |
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p. 647-649 3 p. |
artikel |
191 |
s-expected number of inspections and repairs of a single server n-unit system subject to arbitrary failure
|
Subramanyam Naidu, R. |
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1984 |
24 |
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p. 651-658 8 p. |
artikel |
192 |
Shallow doping in silicon
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1984 |
24 |
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p. 819- 1 p. |
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193 |
Silicon epitaxy: a 1983 perspective
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1984 |
24 |
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p. 811- 1 p. |
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194 |
Silicon film recrystallization using e-beam line source
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1984 |
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p. 824- 1 p. |
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195 |
Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films
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1984 |
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p. 824-825 2 p. |
artikel |
196 |
Simplification of Boolean functions through petri nets
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1984 |
24 |
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p. 808- 1 p. |
artikel |
197 |
Size effect on different impurity levels in semiconductors
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1984 |
24 |
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p. 818- 1 p. |
artikel |
198 |
Software performance modelling and management
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1984 |
24 |
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p. 811- 1 p. |
artikel |
199 |
Soldering in electronics
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G.W.A.D., |
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1984 |
24 |
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p. 802-803 2 p. |
artikel |
200 |
Some aspects of placement optimization of thermal significant components in thick film high-power hybrid integrated circuits
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1984 |
24 |
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p. 820- 1 p. |
artikel |
201 |
Some present and future applications of laser processing—an overview
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1984 |
24 |
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p. 823- 1 p. |
artikel |
202 |
Spatial yield analysis in integrated circuit manufacturing
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1984 |
24 |
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p. 807- 1 p. |
artikel |
203 |
Steady-state availability of k-out-of-n: G system with single repair
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1984 |
24 |
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p. 809- 1 p. |
artikel |
204 |
Step coverage by vapor deposited thin aluminum films
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1984 |
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p. 815- 1 p. |
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205 |
Stochastic analysis of outdoor power systems in fluctuating environment
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1984 |
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p. 808- 1 p. |
artikel |
206 |
Stochastic behaviour of a two-unit repairable system subject to two types of failure and inspection
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1984 |
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p. 809- 1 p. |
artikel |
207 |
Structural characterization of processed silicon wafers
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1984 |
24 |
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p. 813- 1 p. |
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208 |
Surface roughness and the thermopower of thin films
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1984 |
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p. 821-822 2 p. |
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209 |
Symbolic reliability analysis with the aid of variable-entered Karnaugh maps
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1984 |
24 |
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p. 810- 1 p. |
artikel |
210 |
Technical data package for procurement
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1984 |
24 |
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p. 811- 1 p. |
artikel |
211 |
Technique for measuring the moisture content of sealed IC packages
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1984 |
24 |
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p. 814- 1 p. |
artikel |
212 |
Test bar checks reliability of STL semicustom logic arrays
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1984 |
24 |
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p. 806- 1 p. |
artikel |
213 |
The case for CMOS
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1984 |
24 |
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p. 811- 1 p. |
artikel |
214 |
The design and performace of near micron SOS MOSFETs
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1984 |
24 |
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p. 816- 1 p. |
artikel |
215 |
The effect of high dissipation components on the solder joints of ceramic chip carriers attached to thick film alumina substrates
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1984 |
24 |
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p. 806- 1 p. |
artikel |
216 |
The effects of hydrogen ambients on electromigration kinetics in Al-2% Cu thin film conductors
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1984 |
24 |
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p. 821- 1 p. |
artikel |
217 |
The electrical properties of zinc implanted GaAs
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1984 |
24 |
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p. 825- 1 p. |
artikel |
218 |
The forces behind epitaxial-silicon trends
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1984 |
24 |
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p. 811-812 2 p. |
artikel |
219 |
The generic method of the multistate fault tree analysis
|
Huang, Xizhi |
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1984 |
24 |
4 |
p. 617-622 6 p. |
artikel |
220 |
Theory of the growth of SiO2 in an oxygen plasma
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1984 |
24 |
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p. 819- 1 p. |
artikel |
221 |
Thermal management of electronic packages
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1984 |
24 |
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p. 813- 1 p. |
artikel |
222 |
Thermal nitridation of silicon and silicon dioxide for thin gate insulators. Part II
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1984 |
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p. 818- 1 p. |
artikel |
223 |
Thermal studies on pin grid array packages for high density LSI and VLSI logic circuits
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1984 |
24 |
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p. 813- 1 p. |
artikel |
224 |
The role of surface treatment on the anodic oxidation of n-GaAs
|
Kochhar, Madhu |
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1984 |
24 |
4 |
p. 629-631 3 p. |
artikel |
225 |
The time resolved electron beam induced current method applied to P-N junctions
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1984 |
24 |
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p. 824- 1 p. |
artikel |
226 |
The top-event's failure frequency for non-coherent multi-state fault trees
|
Bossche, A. |
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1984 |
24 |
4 |
p. 707-715 9 p. |
artikel |
227 |
The width of the non-steady state transition region in deep level impurity measurements
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1984 |
24 |
4 |
p. 817-818 2 p. |
artikel |
228 |
Thin film processing of hybrid ICs
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1984 |
24 |
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p. 820- 1 p. |
artikel |
229 |
Thin film studies of oxides by the organometallic-CVD technique
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1984 |
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p. 820- 1 p. |
artikel |
230 |
Three-chip set offers universal cost-effective SLIC
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1984 |
24 |
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p. 816- 1 p. |
artikel |
231 |
Top-edge imaging in E-beam lithography
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1984 |
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p. 822- 1 p. |
artikel |
232 |
Trends in medical electronics using surface mounted components and hybrids
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1984 |
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p. 821- 1 p. |
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233 |
Tunnelling of holes from acceptor levels in an applied field
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1984 |
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p. 819-820 2 p. |
artikel |
234 |
Updating of CMOS reliability
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1984 |
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p. 806- 1 p. |
artikel |
235 |
VLSI, computer designers swap ideas
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1984 |
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236 |
VLSI: the challenge of one million transistors
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1984 |
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p. 811- 1 p. |
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237 |
Voltage—testing of thin-film capacitors
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1984 |
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p. 821- 1 p. |
artikel |
238 |
Wafer and mask imaging systems
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1984 |
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p. 815- 1 p. |
artikel |
239 |
Waveguides become integrated circuits in new space- and cost-saving method
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1984 |
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p. 816- 1 p. |
artikel |
240 |
X-ray lithography: optical's heir
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1984 |
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p. 815- 1 p. |
artikel |
241 |
X-ray source technology for microlithography
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1984 |
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p. 815- 1 p. |
artikel |