nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated versus real time aging tests
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
2 |
Achieving high reliability in sonar power supplies
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
3 |
A computational technique for maximum likelihood estimation with Weibull models
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
4 |
Advances in c.c.d. scanners with on-chip signal processing for electronic imaging
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
5 |
Advances in GaAs LSI/VLSI processing technology
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
6 |
Advances in wafer process control
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
7 |
A GaAs MESFET sample and hold switch
|
|
|
1980 |
20 |
6 |
p. 910- 1 p. |
artikel |
8 |
A generalized computer program for the estimation of the optimum number of trials for establishing a systems reliability
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
9 |
Age replacement policies for Weibull failure times
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
10 |
A guidebook for software reliability assessment
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
11 |
A high speed 64 × 4 bit 100K-compatible ECL-RAM with 6 NS access time
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
12 |
A high speed multiplier using subnanosecond bipolar VLSI technologies
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
13 |
Alloyed thick-film gold conductor for high reliability high-yield wire bonding
|
|
|
1980 |
20 |
6 |
p. 916- 1 p. |
artikel |
14 |
Aluminium alloy as an interconnecting material in the fabrication of integrated circuits
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
15 |
Aluminum-silicon OHMIC contact on “shallow” n + /p junctions
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
16 |
Analogue sampling ICs in data acquisition systems
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
17 |
An analysis of MIL-STD-471 test methods
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
18 |
A new air film technique for low contact handling of silicon wafers
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
19 |
A new ultra low power ULA and its application
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
20 |
An influence of the rate of epitaxial growth on physical properties of gallium nitride
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
21 |
An integrated circuit v.h.f. radio receiver
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
22 |
An investigation of the interface state density in metal-silieon nitride-silicon structures
|
|
|
1980 |
20 |
6 |
p. 913-914 2 p. |
artikel |
23 |
An investigation of the valley splitting in n-channel silicon (100) inversion layers
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
24 |
A 500-picosecond system design capability
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
25 |
A repairable system with N failure modes and one standby unit
|
Yamashiro, Mitsuo |
|
1980 |
20 |
6 |
p. 831-835 5 p. |
artikel |
26 |
A review of microprocessor software
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
27 |
A study of PtSi formation
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
28 |
A study of three environmental reliability tests
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
29 |
A survey of corrosion failure mechanisms in microelectronic devices
|
|
|
1980 |
20 |
6 |
p. 899-900 2 p. |
artikel |
30 |
Asymptotic distribution of downtime for a cold-standby system
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
31 |
A ULA is more than silicon
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
32 |
Avalanche injection in MNOS gate controlled diodes
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
33 |
Behaviour of line contacts upon the effect of fault currents
|
|
|
1980 |
20 |
6 |
p. 898- 1 p. |
artikel |
34 |
16-bit microprocessor enters virtual memory domain
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
35 |
Built-in test for complex digital integrated circuits
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
36 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1980 |
20 |
6 |
p. 769-770 2 p. |
artikel |
37 |
Characterization of surface states in HCL-grown oxides using MOS transient currents
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
38 |
Charge injection from a surface depletion region—the Al2O3-silicon system
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
39 |
Checking request policies for a one-unit system and their comparisons
|
Yamada, Shigeru |
|
1980 |
20 |
6 |
p. 859-874 16 p. |
artikel |
40 |
Chip carrier packaging applications
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
41 |
Chips make fast math a snap for microprocessors
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
42 |
Circuit-board packaging considerations for optimum utilization of chip carriers
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
43 |
C-MOS multiplier speeds task for microprocessors
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
44 |
Common-cause failure analysis of a three-state device system
|
|
|
1980 |
20 |
6 |
p. 904-905 2 p. |
artikel |
45 |
Common cause failures—a dilemma in perspective
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
46 |
Computer aided design of LSI: an I2L case study
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
47 |
Computer-aided determination of tests for the detection and localisation of faults in electronic circuits and systems
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
48 |
Confidence intervals for comparing two life distributions
|
|
|
1980 |
20 |
6 |
p. 901-902 2 p. |
artikel |
49 |
Control chip handles error checking and character-hased protocols easily
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
50 |
Cost analyses for avionics acquisition
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
51 |
Cost effective semiconductor memory testing
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
52 |
Current aspects of CAD for integrated circuits
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
53 |
Custom ECL chips boost performance in smaller mainframes
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
54 |
Data needs for software reliability modelling
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
55 |
Decoding scheme smooths 18-bit converter's nonlinearity
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
56 |
Degradation of thermocompression bonds to Ti-Cu-Au and Ti-Cu thin films by thermal aging
|
|
|
1980 |
20 |
6 |
p. 898- 1 p. |
artikel |
57 |
Design aspects and reliability of a synchronizer made in MOS technology
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
58 |
Development of the thick-film capacitor and its application for hybrid circuit modules
|
|
|
1980 |
20 |
6 |
p. 915- 1 p. |
artikel |
59 |
Difficulties in fault-tree synthesis for process plant
|
|
|
1980 |
20 |
6 |
p. 902-903 2 p. |
artikel |
60 |
Digital filter analysis with personal computer
|
Bozic, S.M. |
|
1980 |
20 |
6 |
p. 836-845 10 p. |
artikel |
61 |
Digital system diagnostics-design/evaluation
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
62 |
Digraphs and their applications in fault tree analysis
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
63 |
Distributed computer network takes charge in IC faeility
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
64 |
Draft DoD directive 5000.xx, Reliability and Maintainability
|
|
|
1980 |
20 |
6 |
p. 897- 1 p. |
artikel |
65 |
Effect of shunt capacitance on tapered distributed RC network characteristics
|
Au, K.D. |
|
1980 |
20 |
6 |
p. 847-852 6 p. |
artikel |
66 |
Effect of switch failure on 2 redundant systems
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
67 |
Electromigration mechanism in aluminium conductors
|
|
|
1980 |
20 |
6 |
p. 898- 1 p. |
artikel |
68 |
Electrothermal effects in integrated circuits
|
|
|
1980 |
20 |
6 |
p. 910- 1 p. |
artikel |
69 |
Estimation of the guarantee time in an exponential failure model
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
70 |
Experimental characterization of most's scaled down to the 1 μm level
|
Sunami, Hideo |
|
1980 |
20 |
6 |
p. 803-822 20 p. |
artikel |
71 |
Experimental investigation of mounting thermal resistance of flatpacks on circuit boards
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
72 |
Extension of high-temperature electronics
|
|
|
1980 |
20 |
6 |
p. 916- 1 p. |
artikel |
73 |
Fabrication of passive components for high-temperature instrumentation
|
|
|
1980 |
20 |
6 |
p. 915- 1 p. |
artikel |
74 |
Failure analysis on a 65 K MOS RAM with a new type of memory display
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
75 |
Fault-tolerant system optimization
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
76 |
Field maintenance organization analysis models
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
77 |
First uptime and disappointment time joint distribution of an intermittently used system
|
Kapoor, K.R. |
|
1980 |
20 |
6 |
p. 891-893 3 p. |
artikel |
78 |
Fully automated integrated circuit wire bonding system
|
|
|
1980 |
20 |
6 |
p. 910- 1 p. |
artikel |
79 |
General failure model applied to preventive maintenance policies
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
80 |
Gold/chromium metallizations for electronics devices
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
81 |
Ground-hypotheses for beta distribution as Bayesian prior
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
82 |
Hardening RAMs against soft errors
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
83 |
Hardware and software: an analytical approach
|
|
|
1980 |
20 |
6 |
p. 903-904 2 p. |
artikel |
84 |
Hardware vs software reliability—A comparative study
|
Soi, Inder M. |
|
1980 |
20 |
6 |
p. 881-885 5 p. |
artikel |
85 |
High density uncommitted arrays using an advanced CMOS technology
|
|
|
1980 |
20 |
6 |
p. 910- 1 p. |
artikel |
86 |
IBM multichip multilayer ceramic modules for LSI chips—design for performance and density
|
|
|
1980 |
20 |
6 |
p. 910- 1 p. |
artikel |
87 |
I. C. layout—the automatic approach
|
|
|
1980 |
20 |
6 |
p. 907-908 2 p. |
artikel |
88 |
Implementation constraints in self-checking integrated circuits
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
89 |
Influence of the substrate on the electrical properties of thick-film resistors
|
|
|
1980 |
20 |
6 |
p. 916- 1 p. |
artikel |
90 |
Integrated circuit characteristics at 260°C for aircraft engine-control applications
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
91 |
Intelligent memories and the silicon chip
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
92 |
INTELSAT system reliability
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
93 |
Interdiffusion processes and oxidation phenomena in NiCr/Au films
|
|
|
1980 |
20 |
6 |
p. 915-916 2 p. |
artikel |
94 |
Ion beams promise practical systems for submicrometer wafer lithography
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
95 |
Ionization assisted annealing of boron implanted silicon
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
96 |
Japanese make quality-control pitch
|
|
|
1980 |
20 |
6 |
p. 897- 1 p. |
artikel |
97 |
k-out-of-n:G system with simultaneous failure and three repair policies
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
98 |
L'aide à la maintenance des systèmes: le moniteur MOSTAM
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
99 |
Large scale digital hybrid microcircuits for new military systems
|
|
|
1980 |
20 |
6 |
p. 916- 1 p. |
artikel |
100 |
Large-scale integration latches onto the phone system
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
101 |
Loading effect and temperature dependence of etch rate of silicon materials in CF4 plasma
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
102 |
Log-rank vs x test for exponentiality
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
103 |
Mainframe builders making more ICs
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
104 |
Management benefits and burdens in regulatory legalisms
|
|
|
1980 |
20 |
6 |
p. 897- 1 p. |
artikel |
105 |
Maximum likelihood estimation of linear failure rate
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
106 |
Methods, equipment and materials for the wire contacting of semiconductor chips
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
107 |
Microelectronics—the revolution in consumer equipment
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
108 |
Minicomputer fills mainframe's shows
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
109 |
Model for failure rate curves
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
110 |
Molecular beam epitaxy
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
111 |
Multiple-drain MOS packs in very fast logic gates
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
112 |
Multi-state homogeneous Markov models in reliability analysis
|
Bobbio, Andrea |
|
1980 |
20 |
6 |
p. 875-880 6 p. |
artikel |
113 |
No. 4 ESS—Reliability and maintainability experience
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
114 |
Observation of valley splitting in (111) n-type silicon inversion layers
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
115 |
Observed reliability of FLIR common modules and systems
|
|
|
1980 |
20 |
6 |
p. 905-906 2 p. |
artikel |
116 |
On a basic equation of reliability theory
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
117 |
On human reliability trends in digital communication systems
|
Soi, Inder M. |
|
1980 |
20 |
6 |
p. 823-830 8 p. |
artikel |
118 |
On reliability of a computer network
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
119 |
On the decision to replace a unit early or late—A graphical solution
|
Bergman, Bo |
|
1980 |
20 |
6 |
p. 895-896 2 p. |
artikel |
120 |
On the mobility of polycrystalline semiconductors
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
121 |
On the specification of repair time requirements
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
122 |
Optical end-point detection for the plasma etching of aluminum
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
123 |
Optimization of maintained systems
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
124 |
Optimization system reliability via redundancy and/or design considerations
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
125 |
Optimum preventive maintenance policies for a 2-unit redundant system with repair and post-repair
|
Sinha, S.M. |
|
1980 |
20 |
6 |
p. 887-890 4 p. |
artikel |
126 |
Paraconductivity of Ge-covered tin films
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
127 |
Path enumeration using flow graphs
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
128 |
Performance/availability model of shared resource multiprocessors
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
129 |
Performance of the porcelain-metal substrate at microwaves
|
|
|
1980 |
20 |
6 |
p. 915- 1 p. |
artikel |
130 |
Photoexcitation effects during laser trimming of thin-film resistors on silicon
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
131 |
Piezoresistance tensor coefficients of phosphorus implanted silicon thin films
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
132 |
Plasma deposited polycrystalline silicon films
|
|
|
1980 |
20 |
6 |
p. 911-912 2 p. |
artikel |
133 |
Plasma etching for SiO2 profile control
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
134 |
Polysilicon self-aligned technology—A new approach for bipolar LSIs
|
|
|
1980 |
20 |
6 |
p. 910-911 2 p. |
artikel |
135 |
Preliminary evaluation of DIP/socket connection reliability
|
|
|
1980 |
20 |
6 |
p. 897-898 2 p. |
artikel |
136 |
Preoxidation gettering of oxidation-induced stacking faults in silicon by the phosphorus diffusion process
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
137 |
Probability plots for life test data based on optimum spacing method
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
138 |
Procurement specification requirements for protection against electromigration failures in aluminium metallizations
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
139 |
Product liability prevention—an engineer's viewpoint
|
|
|
1980 |
20 |
6 |
p. 897- 1 p. |
artikel |
140 |
Products liability: defective conditions
|
|
|
1980 |
20 |
6 |
p. 897- 1 p. |
artikel |
141 |
Programmable components: the shape of VLSI to come
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
142 |
Properties of plasma enhanced CVD silicon nitride: measurements and interpretations
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
143 |
Publications, notices, calls forpapers, etc.
|
|
|
1980 |
20 |
6 |
p. 771-786 16 p. |
artikel |
144 |
Quantitative comparison of electronic component/solder joint stress relief in encapsulated assemblies
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
145 |
Realization of frequency dependent negative resistance
|
Salawu, R.I. |
|
1980 |
20 |
6 |
p. 853-857 5 p. |
artikel |
146 |
Real-time monitoring of semiconductor process uniformity
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
147 |
Reliability assurance programs to meet regulatory requirements in the electric power and process industries
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
148 |
Reliability bounds for decomposable multi-component systems
|
|
|
1980 |
20 |
6 |
p. 902- 1 p. |
artikel |
149 |
Reliability design and quality assurance system for solid tantalum capacitor
|
|
|
1980 |
20 |
6 |
p. 898- 1 p. |
artikel |
150 |
Reliability evaluation of a flow network
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
151 |
Reliability improvement of multiterminal networks
|
|
|
1980 |
20 |
6 |
p. 900-901 2 p. |
artikel |
152 |
Reliability problems with the store switching circuit U 253
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
153 |
Reliability study of high-power microwave GaAs MESFETs
|
|
|
1980 |
20 |
6 |
p. 898- 1 p. |
artikel |
154 |
Reliable Multiwire circuits with small gauge wires
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
155 |
Repairable systems with one standby unit
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
156 |
Research and development of IC technology in Japan
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
157 |
Reversible breakdown voltage collapse in silicon gate-controlled diodes
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
158 |
Semi-empirical APW calculation of the band structure of silicon
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
159 |
Sequential destruction method for Monte Carlo evaluation of system reliability
|
|
|
1980 |
20 |
6 |
p. 901- 1 p. |
artikel |
160 |
Simple process propels bipolar PROMs to 16-K density and beyond
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
161 |
Simulation comparisons of point estimation methods in the 2-parameter Weibull distribution
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
162 |
Soft errors in VLSI: present and future
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
163 |
Software and hardware R & M: What are the differences
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
164 |
Some aspects of reliable software packages
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
165 |
Some facts about environmental stress screening
|
|
|
1980 |
20 |
6 |
p. 903- 1 p. |
artikel |
166 |
Some fundamental properties of aluminum-aluminum electrical contacts
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
167 |
TCR control of Ni/Cr resistors
|
|
|
1980 |
20 |
6 |
p. 915- 1 p. |
artikel |
168 |
Technical and practical considerations of incorporating microprocessors in OEM products—a management view
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
169 |
The BCML circuit and packaging system
|
|
|
1980 |
20 |
6 |
p. 911- 1 p. |
artikel |
170 |
The decision to replace a unit early or late in an age replacement problem
|
|
|
1980 |
20 |
6 |
p. 904- 1 p. |
artikel |
171 |
The effect of alpha-particle-induced soft errors on memory systems with error correction
|
|
|
1980 |
20 |
6 |
p. 905- 1 p. |
artikel |
172 |
The effects of phosphorus diffusion cooling rate on I2L gain
|
|
|
1980 |
20 |
6 |
p. 914- 1 p. |
artikel |
173 |
The fail-safe feature of the Lapp & Powers fault tree
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
174 |
The failure rate function estimated from parameter drift measurements
|
Møltoft, Jørgen |
|
1980 |
20 |
6 |
p. 787-802 16 p. |
artikel |
175 |
The MOM 400 single-chip microcomputer
|
|
|
1980 |
20 |
6 |
p. 908- 1 p. |
artikel |
176 |
The performance of plastic-encapsulated CMOS microcircuits in a humid environment
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
177 |
The promotion of VLSI and microlithography in Germany
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
178 |
The responsibility of the consumer. The pendulum has swung too far
|
|
|
1980 |
20 |
6 |
p. 897- 1 p. |
artikel |
179 |
Thermal studies of a plastic dual-in-line package
|
|
|
1980 |
20 |
6 |
p. 909- 1 p. |
artikel |
180 |
The role of hybrids in LSI systems
|
|
|
1980 |
20 |
6 |
p. 915- 1 p. |
artikel |
181 |
The steady-state distribution of signal charge in charge-coupled devices
|
|
|
1980 |
20 |
6 |
p. 912- 1 p. |
artikel |
182 |
The use of an industrial X-ray source for electronic component radiation effects work
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
183 |
Thick-film fine pattern formation by a photolithographic process
|
|
|
1980 |
20 |
6 |
p. 915- 1 p. |
artikel |
184 |
Thin layer high-voltage devices (resurf devices)
|
|
|
1980 |
20 |
6 |
p. 917- 1 p. |
artikel |
185 |
Transient damage resulting in failure of a component exposed to ionizing radiation environment
|
|
|
1980 |
20 |
6 |
p. 900- 1 p. |
artikel |
186 |
Two-chip radio link pilots toys and models
|
|
|
1980 |
20 |
6 |
p. 913- 1 p. |
artikel |
187 |
Ultrasonic in-line inspection technique for contact materials
|
|
|
1980 |
20 |
6 |
p. 899- 1 p. |
artikel |
188 |
Universal logic gates for custom-design I.C. requiremeats
|
|
|
1980 |
20 |
6 |
p. 910- 1 p. |
artikel |
189 |
VLSI—directions and impact
|
|
|
1980 |
20 |
6 |
p. 907- 1 p. |
artikel |
190 |
VLSI/LSI circuit functions: their challenges, rewards and problems
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |
191 |
VLSI with a vengeneance
|
|
|
1980 |
20 |
6 |
p. 906- 1 p. |
artikel |