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                             189 results found
no title author magazine year volume issue page(s) type
1 A bibliography on silicon nitride films Morosanu, C.-E.
1980
20 3 p. 357-370
14 p.
article
2 Accelerated reliability evaluation of trimetal integrated circuit chips in plastic packages 1980
20 3 p. 375-
1 p.
article
3 Active device prescreening for hybrids 1980
20 3 p. 388-
1 p.
article
4 Advances in testing LSI populated boards 1980
20 3 p. 383-
1 p.
article
5 Aging of solder connection to Ti-Pd-Au films 1980
20 3 p. 377-
1 p.
article
6 A high-stability RC circuit using high nitrogen doped tantalum 1980
20 3 p. 388-
1 p.
article
7 Air film system for handling semiconductor wafers 1980
20 3 p. 382-
1 p.
article
8 A low-cost thin-film microcircuit process 1980
20 3 p. 388-389
2 p.
article
9 American Society for Quality Control 33rd Annual Technical Conference Transactions G.W.A.D.,
1980
20 3 p. 185-187
3 p.
article
10 A method of symbolic steady-state availability evaluation of k∣ out-of-n:G system 1980
20 3 p. 380-
1 p.
article
11 Analysis of microprocessors test generation—its meaning and use 1980
20 3 p. 384-
1 p.
article
12 Analysis of the effects of mechanical stress on the properties of p-channel MOS structures. Part I. Choice of the theoretical model. The effect of stress on the valence band structure in silicon 1980
20 3 p. 377-
1 p.
article
13 An analysis of LPCVD system parameters for polysilicon, silicon nitride and silicon dioxide deposition 1980
20 3 p. 385-
1 p.
article
14 An availability evaluation for computer communication networks Corsi, F.
1980
20 3 p. 309-313
5 p.
article
15 A new resistor system for high reliability applications 1980
20 3 p. 389-
1 p.
article
16 Annealing of ion implanted layers by laser beam 1980
20 3 p. 391-
1 p.
article
17 An overview of E-beam mask-making 1980
20 3 p. 390-391
2 p.
article
18 Application of the ZBA-10 electron-beam exposure system in the production of precision photomasks with pattern element dimensions in the submicron range 1980
20 3 p. 391-
1 p.
article
19 Approaches to comparing cut-set enumeration algorithms 1980
20 3 p. 379-
1 p.
article
20 Approximation of distribution density functions 1980
20 3 p. 379-
1 p.
article
21 Approximations to moments of parallel-system lifetime based on sampling from a finite population 1980
20 3 p. 378-
1 p.
article
22 A production-compatible microelectronic test pattern for evaluating photomask misalignment 1980
20 3 p. 187-
1 p.
article
23 A reparable multistate device 1980
20 3 p. 380-
1 p.
article
24 Ar-ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen back-scattering 1980
20 3 p. 391-
1 p.
article
25 A simplified method for evaluating time dependent fault-trees, using Weibull distribution Dubuisson, B.
1980
20 3 p. 347-350
4 p.
article
26 A thick film capacitive temperature sensor using barium strontium titanate glass formulations 1980
20 3 p. 389-
1 p.
article
27 A two-dimensional placement algorithm for the layout of electronic circuits Gupta, Hariom
1980
20 3 p. 323-328
6 p.
article
28 A user's performance profile of a thick-film resistor system 1980
20 3 p. 387-
1 p.
article
29 Automatic in-circuit inspection of printed circuit board assemblies 1980
20 3 p. 376-
1 p.
article
30 Basis sets for the study of point defects in solids using Green's-function methods 1980
20 3 p. 386-
1 p.
article
31 Behaviour of a two-unit standby redundant system with imperfect switching and delayed repair Kumar, Ashok
1980
20 3 p. 315-321
7 p.
article
32 Calculating the time-specific frequency of system failure 1980
20 3 p. 379-
1 p.
article
33 Calendar of international conferences, symposia, lectures and meetings of interest 1980
20 3 p. 173-175
3 p.
article
34 Characteristics of three-terminal metal-tunnel Oxide-n/p+ devices 1980
20 3 p. 385-
1 p.
article
35 Chip corrosion in plastic packages Berg, Howard M.
1980
20 3 p. 247-263
17 p.
article
36 Chip makers ride CRT controller wave 1980
20 3 p. 383-
1 p.
article
37 C-MOS LSI: comparing second-generation approaches 1980
20 3 p. 381-
1 p.
article
38 Coding and decoding of Wafers 1980
20 3 p. 381-
1 p.
article
39 Computer aids for reliability prediction and spares provisioning 1980
20 3 p. 379-
1 p.
article
40 Computer controlled optical microprojection system for one micron structures 1980
20 3 p. 381-
1 p.
article
41 Confidence bounds on reliability for the inverse Gaussian model 1980
20 3 p. 379-
1 p.
article
42 Contact and relaxation behaviour of aluminium conductor materials in the solderless wire-wrap technique, Part 1 1980
20 3 p. 376-
1 p.
article
43 Correlating tropical exposure of plastic encapsulated devices with laboratory tests 1980
20 3 p. 376-
1 p.
article
44 Cost optimization of some stochastic maintenance policies 1980
20 3 p. 378-
1 p.
article
45 Deposition and characterization of magnetron sputtered aluminum and aluminum alloy films 1980
20 3 p. 388-
1 p.
article
46 Design considerations for molecular beam epitaxy systems 1980
20 3 p. 390-
1 p.
article
47 Detection and identification of potential impurities activated by neutron irradiation of Czochralski silicon 1980
20 3 p. 384-
1 p.
article
48 Diamond-tipped and other new thermodes for device bonding 1980
20 3 p. 376-
1 p.
article
49 Digital phase-locked loop finds clock signal in bit stream 1980
20 3 p. 383-
1 p.
article
50 Direct wafer exposure 1980
20 3 p. 382-383
2 p.
article
51 Double epitaxy method for the simultaneous manufacture of I2L-arrangements and insulated transistors 1980
20 3 p. 381-
1 p.
article
52 Echo-canceling chip opens way to increased use of satellite channels 1980
20 3 p. 383-
1 p.
article
53 ECL accelerates to new system speeds with high-density byte-slice parts 1980
20 3 p. 384-
1 p.
article
54 Editorial G.W.A.D.,
1980
20 3 p. 169-172
4 p.
article
55 Effect of structural defects on degradation of diffused GaAs LED's 1980
20 3 p. 384-385
2 p.
article
56 Electron-beam-induced-current investigations on MOS and MNOS devices 1980
20 3 p. 390-
1 p.
article
57 Electron-exciton inelastic collision cross sections for different semiconductors 1980
20 3 p. 385-
1 p.
article
58 Electronic dielectric constant of III–V semiconductors 1980
20 3 p. 384-
1 p.
article
59 Electronics reliability: A state-of-the-art survey Blanks, Henry S.
1980
20 3 p. 219-245
27 p.
article
60 Electron trapping in neutron-irradiated very thin films of Al2O3 1980
20 3 p. 388-
1 p.
article
61 Energy levels and degeneracy ratios for magnesium in n-type silicon 1980
20 3 p. 386-
1 p.
article
62 Enumeration of all minimal cut-sets for a node pair in a graph 1980
20 3 p. 380-
1 p.
article
63 E-PROM doubles bit density without adding a pin 1980
20 3 p. 384-
1 p.
article
64 Estimation in a Pareto distribution: theory and computation 1980
20 3 p. 380-
1 p.
article
65 Estimation of the reliability of computer components from field renewal data Trindade, David C.
1980
20 3 p. 205-218
14 p.
article
66 Evaluation delay cut by low-cost microprocessor development 1980
20 3 p. 384-
1 p.
article
67 Evaluation of equipment reliability 1980
20 3 p. 377-
1 p.
article
68 Experience gathered with the application of the special-type ZRM-12 scanning electron microscope in the semiconductor industry 1980
20 3 p. 382-
1 p.
article
69 Experimental verification of the model of silicon epitaxy 1980
20 3 p. 384-
1 p.
article
70 Failure analysis of r.f. power transistors 1980
20 3 p. 376-
1 p.
article
71 Generalized transport equations for semiconductors 1980
20 3 p. 385-
1 p.
article
72 Hazard reduction in process plant by instrumentation philosophy 1980
20 3 p. 380-
1 p.
article
73 Hermetic packages for hybrid circuits 1980
20 3 p. 387-
1 p.
article
74 HMOS II static RAMs overtake bipolar competition 1980
20 3 p. 383-
1 p.
article
75 How to measure software reliability and how not to 1980
20 3 p. 378-
1 p.
article
76 Hybrid IC structures using solder reflow technology 1980
20 3 p. 388-
1 p.
article
77 Improvement of supervision schedules for protective systems 1980
20 3 p. 377-
1 p.
article
78 In-circuit and functional board tests 1980
20 3 p. 375-
1 p.
article
79 Inspection intervals for condition-maintained items which fail in an obvious manner 1980
20 3 p. 380-
1 p.
article
80 International quality control—cooperation in an overview 1980
20 3 p. 375-
1 p.
article
81 Investigations of gold surface-state energy levels in gold-doped MOS transistors 1980
20 3 p. 377-
1 p.
article
82 Learning processes and growth curves in the field of integrated circuits Hilberg, W.
1980
20 3 p. 337-341
5 p.
article
83 Low expansivity organic substrate for flip-chip bonding 1980
20 3 p. 382-
1 p.
article
84 LSI reliability prediction based on time Jääskeläinen, Pentti
1980
20 3 p. 351-356
6 p.
article
85 Maximum reliability route subject to M improvements in a nondirected network 1980
20 3 p. 379-
1 p.
article
86 Memory testing: characterisation, timing and patterns 1980
20 3 p. 383-
1 p.
article
87 Microfiltration of high purity deionised water 1980
20 3 p. 382-
1 p.
article
88 Microline-etching technique Singh, A.
1980
20 3 p. 293-294
2 p.
article
89 Micromechanical membrane switches on silicon 1980
20 3 p. 383-
1 p.
article
90 Microprocessors — Principles and applications G.W.A.D.,
1980
20 3 p. 185-
1 p.
article
91 MNOS technology—will it survive? 1980
20 3 p. 381-
1 p.
article
92 Model for describing emission characteristics of electron- beam evaporation sources 1980
20 3 p. 390-
1 p.
article
93 Model of 1 f noise in ion-implanted resistors as a function of the resistance, determined by a reverse bias voltage 1980
20 3 p. 390-
1 p.
article
94 Modified method-of-moments in empirical Bayes estimation 1980
20 3 p. 379-
1 p.
article
95 Modular IC tester is easily optimized 1980
20 3 p. 383-
1 p.
article
96 Monemolecular resists: a new class of high resolution resists for electron beam microlithography 1980
20 3 p. 391-
1 p.
article
97 Monolithic MICs gain momentum as gallium arsenide MSI nears 1980
20 3 p. 380-
1 p.
article
98 Multiprocessors architectures 1980
20 3 p. 383-
1 p.
article
99 Negative Hall effect of hot holes in silicon 1980
20 3 p. 386-
1 p.
article
100 New generation of electronic components and how they influence printed circuit boards 1980
20 3 p. 381-
1 p.
article
101 Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination 1980
20 3 p. 387-
1 p.
article
102 Now for the math-processing chips 1980
20 3 p. 383-
1 p.
article
103 Observation of a donor exciton band in silicon 1980
20 3 p. 386-
1 p.
article
104 Older processes revamped as new arrivals extend performance limits 1980
20 3 p. 381-
1 p.
article
105 One-chip data-encryption unit accesses memory directly 1980
20 3 p. 383-384
2 p.
article
106 One micron range photoresist imaging: a practical approach 1980
20 3 p. 381-
1 p.
article
107 On human reliability—Bibliography Dhillon, Balbir S.
1980
20 3 p. 371-373
3 p.
article
108 On reliable software development for microprocessors Soi, Inder M.
1980
20 3 p. 273-279
7 p.
article
109 On some minimal repair model Adachi, Kouichi
1980
20 3 p. 265-271
7 p.
article
110 On the splitting of the exciton ground state in silicon 1980
20 3 p. 387-
1 p.
article
111 Optical switching in metal tunnel-insulator n−p+ silicon devices 1980
20 3 p. 385-
1 p.
article
112 Optimal number of minimal repairs before replacement 1980
20 3 p. 377-
1 p.
article
113 Optimum redundancy allocation in non series-parallel systems by using Boolean differences 1980
20 3 p. 380-
1 p.
article
114 Parameter estimation with noncontinuous inspection 1980
20 3 p. 377-
1 p.
article
115 Peculiarities in optimal redundancy for a bridge network 1980
20 3 p. 379-380
2 p.
article
116 Peripheral chips shift microprocessor systems into high gear 1980
20 3 p. 384-
1 p.
article
117 Personal liability and your future role 1980
20 3 p. 375-
1 p.
article
118 Plasma etching 1980
20 3 p. 382-
1 p.
article
119 Plastic encapsulated semiconductor devices—Bibliogrpahy IV Taylor, C.H.
1980
20 3 p. 287-291
5 p.
article
120 Plastics in microcircuit fabrication — Bibliography II Taylor, C.H.
1980
20 3 p. 281-285
5 p.
article
121 pn Junction applications and transport properties in polysilicon rods 1980
20 3 p. 386-387
2 p.
article
122 Polysilicon production: cost analysis of conventional process 1980
20 3 p. 384-
1 p.
article
123 Pooling procedure for life-test data 1980
20 3 p. 378-
1 p.
article
124 Predicting from early failures the last failure time of a (log) normal sample 1980
20 3 p. 380-
1 p.
article
125 Pressure oxidation of silicon: an emerging technology 1980
20 3 p. 386-
1 p.
article
126 Processing considerations to achieve optimum performance from low TCR resistor systems 1980
20 3 p. 388-
1 p.
article
127 Publications, notices, calls for papers, etc. 1980
20 3 p. 177-184
8 p.
article
128 Radiation hardened MOS technology 1980
20 3 p. 386-
1 p.
article
129 Redistribution of dopant impurities in oxidizing ambients 1980
20 3 p. 386-
1 p.
article
130 Reliability and maintainability contribution to Hornet mission success 1980
20 3 p. 380-
1 p.
article
131 Reliability design of a standby system by a large-scale multiobjective optimization method Sakawa, M.
1980
20 3 p. 191-204
14 p.
article
132 Reliability estimates for the truncated 2-parameter exponential distribution 1980
20 3 p. 378-
1 p.
article
133 Reliability indices for a power network considering static, transient, and dynamic performance 1980
20 3 p. 378-
1 p.
article
134 Reliability investigations of advanced semiconductor devices 1980
20 3 p. 376-
1 p.
article
135 Reliability of a repairable system with redundant units and preventive maintenance 1980
20 3 p. 378-
1 p.
article
136 Reliability proven: BDW55/56 gold-gold medium-power transistors 1980
20 3 p. 375-
1 p.
article
137 Response of diazoquinone resists to optical and electron-beam exposure 1980
20 3 p. 391-
1 p.
article
138 Responsibilities for materials reliability and safety 1980
20 3 p. 375-
1 p.
article
139 Role of chlorine in silicon oxidation (Part 1) 1980
20 3 p. 386-
1 p.
article
140 Role of chlorine in silicon oxidation—Part II 1980
20 3 p. 387-
1 p.
article
141 S.A.W. technique of testing piezo-electric semiconductors Singh, Awater
1980
20 3 p. 295-296
2 p.
article
142 Scaled process adds new life to bipolar RAMs 1980
20 3 p. 383-
1 p.
article
143 Semiconductor superlattices by MBE and their characterization 1980
20 3 p. 390-
1 p.
article
144 Semiconductor surface and crystal physics studies by MBE 1980
20 3 p. 390-
1 p.
article
145 Semicustom analog chip sports two metalization layers 1980
20 3 p. 382-
1 p.
article
146 Silicon epitaxial films of submicrometer thickness 1980
20 3 p. 384-
1 p.
article
147 Silicon epitaxy 1980
20 3 p. 386-
1 p.
article
148 Silver migration and the reliability of Pd/Ag conductors in thick-film dielectric crossover structures 1980
20 3 p. 389-
1 p.
article
149 Simplified relations for determining flat-band capacitance and impurity concentration in MOS structures 1980
20 3 p. 384-
1 p.
article
150 Solar-grade silicon by directional solidification in carbon crucibles 1980
20 3 p. 385-
1 p.
article
151 Some annealing properties of low-energy-antimony-implanted silicon resistors 1980
20 3 p. 391-
1 p.
article
152 Standardisation 1980
20 3 p. 381-
1 p.
article
153 Starting and limiting values for reliability growth 1980
20 3 p. 379-
1 p.
article
154 Stochastic analysis of 2-unit system subject to two types of failure Dharmadhikari, A.D.
1980
20 3 p. 343-345
3 p.
article
155 Store coupling of unequal microprocessors 1980
20 3 p. 383-
1 p.
article
156 Study of the surface properties of thermally oxidized silicon using surface acoustic wave attentuation 1980
20 3 p. 385-
1 p.
article
157 Surface-acoustic-wave filters prove versatile in vhf applications 1980
20 3 p. 383-
1 p.
article
158 Surface Contamination Genesis, Detection, and Control G.W.A.D.,
1980
20 3 p. 189-
1 p.
article
159 Surface state study of ion implanted GaAs (Se) from photoreflectance 1980
20 3 p. 390-
1 p.
article
160 Switching system maintenance—and more 1980
20 3 p. 379-
1 p.
article
161 System reliability as a function of hardware flexibility 1980
20 3 p. 378-
1 p.
article
162 Temperature acceleration of CMOS IC operating life Isagawa, Masaaki
1980
20 3 p. 329-335
7 p.
article
163 Temperature aging of external connections condensation soldered to Ti-Pol-Au thin films 1980
20 3 p. 389-
1 p.
article
164 Temperature dependence of the Hall coefficient of thin films 1980
20 3 p. 388-
1 p.
article
165 Temperature-dependent instabilities of the electrical properties of transistors and quartz crystal oscillators in tinplated packages 1980
20 3 p. 376-377
2 p.
article
166 Testing bare PC boards 1980
20 3 p. 375-376
2 p.
article
167 The adherence of chromium and titanium films deposited on alumina, quartz, and glass—testing and improvement of electron-beam-deposition techniques 1980
20 3 p. 391-
1 p.
article
168 The cell method, a new approach to multiple stuck-at-fault test generation 1980
20 3 p. 380-
1 p.
article
169 The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques 1980
20 3 p. 387-
1 p.
article
170 The economics of standard electronic packaging 1980
20 3 p. 381-
1 p.
article
171 The effect of RF annealing upon electron-beam irradiated MIS structures 1980
20 3 p. 390-
1 p.
article
172 The electron beam: a better way to make semiconductor masks 1980
20 3 p. 390-
1 p.
article
173 The engineering of microprocessor systems G.W.A.D.,
1980
20 3 p. 188-
1 p.
article
174 The interpretation of failure data using Weibull plots 1980
20 3 p. 377-
1 p.
article
175 The limitations of reactively-bonded thick film gold conductors 1980
20 3 p. 389-
1 p.
article
176 The MPUR mask projection and alignment repeater of VEB Carl Zeiss JENA 1980
20 3 p. 382-
1 p.
article
177 Theoretical estimates of the sheet resistance of Gaussian n-type ion-implanted layers in semiconductors: phosphorus in silicon 1980
20 3 p. 390-
1 p.
article
178 Theoretical study of the raman cross section and its pressure dependence in silicon 1980
20 3 p. 385-
1 p.
article
179 The resistance of space-quality solder joints to thermal fatigue—Part 1 1980
20 3 p. 376-
1 p.
article
180 The temperature dependence of component failure rate Blanks, H.S.
1980
20 3 p. 297-307
11 p.
article
181 Thick film resistors at liquid nitrogen temperature and at microwave frequencies 1980
20 3 p. 387-388
2 p.
article
182 Tories changing rules of the game 1980
20 3 p. 381-
1 p.
article
183 Tunnels in semiconductor epitaxy 1980
20 3 p. 386-
1 p.
article
184 Two algorithms for determining the most reliable path of a network 1980
20 3 p. 378-
1 p.
article
185 Using infrared to analyse board faults 1980
20 3 p. 376-
1 p.
article
186 Vibration, shock and intense noise testing for reliability 1980
20 3 p. 377-
1 p.
article
187 V-MOS chip joins microprocessor to handle signals in real time 1980
20 3 p. 383-
1 p.
article
188 Wafers to challenge disks, bubbles? 1980
20 3 p. 381-
1 p.
article
189 Yield improvement on L.S.I. 1980
20 3 p. 381-
1 p.
article
                             189 results found
 
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