nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A bibliography on silicon nitride films
|
Morosanu, C.-E. |
|
1980 |
20 |
3 |
p. 357-370 14 p. |
artikel |
2 |
Accelerated reliability evaluation of trimetal integrated circuit chips in plastic packages
|
|
|
1980 |
20 |
3 |
p. 375- 1 p. |
artikel |
3 |
Active device prescreening for hybrids
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
4 |
Advances in testing LSI populated boards
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
5 |
Aging of solder connection to Ti-Pd-Au films
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
6 |
A high-stability RC circuit using high nitrogen doped tantalum
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
7 |
Air film system for handling semiconductor wafers
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
8 |
A low-cost thin-film microcircuit process
|
|
|
1980 |
20 |
3 |
p. 388-389 2 p. |
artikel |
9 |
American Society for Quality Control 33rd Annual Technical Conference Transactions
|
G.W.A.D., |
|
1980 |
20 |
3 |
p. 185-187 3 p. |
artikel |
10 |
A method of symbolic steady-state availability evaluation of k∣ out-of-n:G system
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
11 |
Analysis of microprocessors test generation—its meaning and use
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
12 |
Analysis of the effects of mechanical stress on the properties of p-channel MOS structures. Part I. Choice of the theoretical model. The effect of stress on the valence band structure in silicon
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
13 |
An analysis of LPCVD system parameters for polysilicon, silicon nitride and silicon dioxide deposition
|
|
|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
14 |
An availability evaluation for computer communication networks
|
Corsi, F. |
|
1980 |
20 |
3 |
p. 309-313 5 p. |
artikel |
15 |
A new resistor system for high reliability applications
|
|
|
1980 |
20 |
3 |
p. 389- 1 p. |
artikel |
16 |
Annealing of ion implanted layers by laser beam
|
|
|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
17 |
An overview of E-beam mask-making
|
|
|
1980 |
20 |
3 |
p. 390-391 2 p. |
artikel |
18 |
Application of the ZBA-10 electron-beam exposure system in the production of precision photomasks with pattern element dimensions in the submicron range
|
|
|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
19 |
Approaches to comparing cut-set enumeration algorithms
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
20 |
Approximation of distribution density functions
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
21 |
Approximations to moments of parallel-system lifetime based on sampling from a finite population
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
22 |
A production-compatible microelectronic test pattern for evaluating photomask misalignment
|
|
|
1980 |
20 |
3 |
p. 187- 1 p. |
artikel |
23 |
A reparable multistate device
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
24 |
Ar-ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen back-scattering
|
|
|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
25 |
A simplified method for evaluating time dependent fault-trees, using Weibull distribution
|
Dubuisson, B. |
|
1980 |
20 |
3 |
p. 347-350 4 p. |
artikel |
26 |
A thick film capacitive temperature sensor using barium strontium titanate glass formulations
|
|
|
1980 |
20 |
3 |
p. 389- 1 p. |
artikel |
27 |
A two-dimensional placement algorithm for the layout of electronic circuits
|
Gupta, Hariom |
|
1980 |
20 |
3 |
p. 323-328 6 p. |
artikel |
28 |
A user's performance profile of a thick-film resistor system
|
|
|
1980 |
20 |
3 |
p. 387- 1 p. |
artikel |
29 |
Automatic in-circuit inspection of printed circuit board assemblies
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
30 |
Basis sets for the study of point defects in solids using Green's-function methods
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
31 |
Behaviour of a two-unit standby redundant system with imperfect switching and delayed repair
|
Kumar, Ashok |
|
1980 |
20 |
3 |
p. 315-321 7 p. |
artikel |
32 |
Calculating the time-specific frequency of system failure
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
33 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1980 |
20 |
3 |
p. 173-175 3 p. |
artikel |
34 |
Characteristics of three-terminal metal-tunnel Oxide-n/p+ devices
|
|
|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
35 |
Chip corrosion in plastic packages
|
Berg, Howard M. |
|
1980 |
20 |
3 |
p. 247-263 17 p. |
artikel |
36 |
Chip makers ride CRT controller wave
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
37 |
C-MOS LSI: comparing second-generation approaches
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
38 |
Coding and decoding of Wafers
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
39 |
Computer aids for reliability prediction and spares provisioning
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
40 |
Computer controlled optical microprojection system for one micron structures
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
41 |
Confidence bounds on reliability for the inverse Gaussian model
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
42 |
Contact and relaxation behaviour of aluminium conductor materials in the solderless wire-wrap technique, Part 1
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
43 |
Correlating tropical exposure of plastic encapsulated devices with laboratory tests
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
44 |
Cost optimization of some stochastic maintenance policies
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
45 |
Deposition and characterization of magnetron sputtered aluminum and aluminum alloy films
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
46 |
Design considerations for molecular beam epitaxy systems
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
47 |
Detection and identification of potential impurities activated by neutron irradiation of Czochralski silicon
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
48 |
Diamond-tipped and other new thermodes for device bonding
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
49 |
Digital phase-locked loop finds clock signal in bit stream
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
50 |
Direct wafer exposure
|
|
|
1980 |
20 |
3 |
p. 382-383 2 p. |
artikel |
51 |
Double epitaxy method for the simultaneous manufacture of I2L-arrangements and insulated transistors
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
52 |
Echo-canceling chip opens way to increased use of satellite channels
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
53 |
ECL accelerates to new system speeds with high-density byte-slice parts
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
54 |
Editorial
|
G.W.A.D., |
|
1980 |
20 |
3 |
p. 169-172 4 p. |
artikel |
55 |
Effect of structural defects on degradation of diffused GaAs LED's
|
|
|
1980 |
20 |
3 |
p. 384-385 2 p. |
artikel |
56 |
Electron-beam-induced-current investigations on MOS and MNOS devices
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
57 |
Electron-exciton inelastic collision cross sections for different semiconductors
|
|
|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
58 |
Electronic dielectric constant of III–V semiconductors
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
59 |
Electronics reliability: A state-of-the-art survey
|
Blanks, Henry S. |
|
1980 |
20 |
3 |
p. 219-245 27 p. |
artikel |
60 |
Electron trapping in neutron-irradiated very thin films of Al2O3
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
61 |
Energy levels and degeneracy ratios for magnesium in n-type silicon
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
62 |
Enumeration of all minimal cut-sets for a node pair in a graph
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
63 |
E-PROM doubles bit density without adding a pin
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
64 |
Estimation in a Pareto distribution: theory and computation
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
65 |
Estimation of the reliability of computer components from field renewal data
|
Trindade, David C. |
|
1980 |
20 |
3 |
p. 205-218 14 p. |
artikel |
66 |
Evaluation delay cut by low-cost microprocessor development
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
67 |
Evaluation of equipment reliability
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
68 |
Experience gathered with the application of the special-type ZRM-12 scanning electron microscope in the semiconductor industry
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
69 |
Experimental verification of the model of silicon epitaxy
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
70 |
Failure analysis of r.f. power transistors
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
71 |
Generalized transport equations for semiconductors
|
|
|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
72 |
Hazard reduction in process plant by instrumentation philosophy
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
73 |
Hermetic packages for hybrid circuits
|
|
|
1980 |
20 |
3 |
p. 387- 1 p. |
artikel |
74 |
HMOS II static RAMs overtake bipolar competition
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
75 |
How to measure software reliability and how not to
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
76 |
Hybrid IC structures using solder reflow technology
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
77 |
Improvement of supervision schedules for protective systems
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
78 |
In-circuit and functional board tests
|
|
|
1980 |
20 |
3 |
p. 375- 1 p. |
artikel |
79 |
Inspection intervals for condition-maintained items which fail in an obvious manner
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
80 |
International quality control—cooperation in an overview
|
|
|
1980 |
20 |
3 |
p. 375- 1 p. |
artikel |
81 |
Investigations of gold surface-state energy levels in gold-doped MOS transistors
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
82 |
Learning processes and growth curves in the field of integrated circuits
|
Hilberg, W. |
|
1980 |
20 |
3 |
p. 337-341 5 p. |
artikel |
83 |
Low expansivity organic substrate for flip-chip bonding
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
84 |
LSI reliability prediction based on time
|
Jääskeläinen, Pentti |
|
1980 |
20 |
3 |
p. 351-356 6 p. |
artikel |
85 |
Maximum reliability route subject to M improvements in a nondirected network
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
86 |
Memory testing: characterisation, timing and patterns
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
87 |
Microfiltration of high purity deionised water
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
88 |
Microline-etching technique
|
Singh, A. |
|
1980 |
20 |
3 |
p. 293-294 2 p. |
artikel |
89 |
Micromechanical membrane switches on silicon
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
90 |
Microprocessors — Principles and applications
|
G.W.A.D., |
|
1980 |
20 |
3 |
p. 185- 1 p. |
artikel |
91 |
MNOS technology—will it survive?
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
92 |
Model for describing emission characteristics of electron- beam evaporation sources
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
93 |
Model of 1 f noise in ion-implanted resistors as a function of the resistance, determined by a reverse bias voltage
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
94 |
Modified method-of-moments in empirical Bayes estimation
|
|
|
1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
95 |
Modular IC tester is easily optimized
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
96 |
Monemolecular resists: a new class of high resolution resists for electron beam microlithography
|
|
|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
97 |
Monolithic MICs gain momentum as gallium arsenide MSI nears
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
98 |
Multiprocessors architectures
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
99 |
Negative Hall effect of hot holes in silicon
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
100 |
New generation of electronic components and how they influence printed circuit boards
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
101 |
Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination
|
|
|
1980 |
20 |
3 |
p. 387- 1 p. |
artikel |
102 |
Now for the math-processing chips
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
103 |
Observation of a donor exciton band in silicon
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
104 |
Older processes revamped as new arrivals extend performance limits
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
105 |
One-chip data-encryption unit accesses memory directly
|
|
|
1980 |
20 |
3 |
p. 383-384 2 p. |
artikel |
106 |
One micron range photoresist imaging: a practical approach
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
107 |
On human reliability—Bibliography
|
Dhillon, Balbir S. |
|
1980 |
20 |
3 |
p. 371-373 3 p. |
artikel |
108 |
On reliable software development for microprocessors
|
Soi, Inder M. |
|
1980 |
20 |
3 |
p. 273-279 7 p. |
artikel |
109 |
On some minimal repair model
|
Adachi, Kouichi |
|
1980 |
20 |
3 |
p. 265-271 7 p. |
artikel |
110 |
On the splitting of the exciton ground state in silicon
|
|
|
1980 |
20 |
3 |
p. 387- 1 p. |
artikel |
111 |
Optical switching in metal tunnel-insulator n−p+ silicon devices
|
|
|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
112 |
Optimal number of minimal repairs before replacement
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
113 |
Optimum redundancy allocation in non series-parallel systems by using Boolean differences
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
114 |
Parameter estimation with noncontinuous inspection
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
115 |
Peculiarities in optimal redundancy for a bridge network
|
|
|
1980 |
20 |
3 |
p. 379-380 2 p. |
artikel |
116 |
Peripheral chips shift microprocessor systems into high gear
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
117 |
Personal liability and your future role
|
|
|
1980 |
20 |
3 |
p. 375- 1 p. |
artikel |
118 |
Plasma etching
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
119 |
Plastic encapsulated semiconductor devices—Bibliogrpahy IV
|
Taylor, C.H. |
|
1980 |
20 |
3 |
p. 287-291 5 p. |
artikel |
120 |
Plastics in microcircuit fabrication — Bibliography II
|
Taylor, C.H. |
|
1980 |
20 |
3 |
p. 281-285 5 p. |
artikel |
121 |
pn Junction applications and transport properties in polysilicon rods
|
|
|
1980 |
20 |
3 |
p. 386-387 2 p. |
artikel |
122 |
Polysilicon production: cost analysis of conventional process
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
123 |
Pooling procedure for life-test data
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
124 |
Predicting from early failures the last failure time of a (log) normal sample
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
125 |
Pressure oxidation of silicon: an emerging technology
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
126 |
Processing considerations to achieve optimum performance from low TCR resistor systems
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
127 |
Publications, notices, calls for papers, etc.
|
|
|
1980 |
20 |
3 |
p. 177-184 8 p. |
artikel |
128 |
Radiation hardened MOS technology
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
129 |
Redistribution of dopant impurities in oxidizing ambients
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
130 |
Reliability and maintainability contribution to Hornet mission success
|
|
|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
131 |
Reliability design of a standby system by a large-scale multiobjective optimization method
|
Sakawa, M. |
|
1980 |
20 |
3 |
p. 191-204 14 p. |
artikel |
132 |
Reliability estimates for the truncated 2-parameter exponential distribution
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
133 |
Reliability indices for a power network considering static, transient, and dynamic performance
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
134 |
Reliability investigations of advanced semiconductor devices
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
135 |
Reliability of a repairable system with redundant units and preventive maintenance
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
136 |
Reliability proven: BDW55/56 gold-gold medium-power transistors
|
|
|
1980 |
20 |
3 |
p. 375- 1 p. |
artikel |
137 |
Response of diazoquinone resists to optical and electron-beam exposure
|
|
|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
138 |
Responsibilities for materials reliability and safety
|
|
|
1980 |
20 |
3 |
p. 375- 1 p. |
artikel |
139 |
Role of chlorine in silicon oxidation (Part 1)
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
140 |
Role of chlorine in silicon oxidation—Part II
|
|
|
1980 |
20 |
3 |
p. 387- 1 p. |
artikel |
141 |
S.A.W. technique of testing piezo-electric semiconductors
|
Singh, Awater |
|
1980 |
20 |
3 |
p. 295-296 2 p. |
artikel |
142 |
Scaled process adds new life to bipolar RAMs
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
143 |
Semiconductor superlattices by MBE and their characterization
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
144 |
Semiconductor surface and crystal physics studies by MBE
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
145 |
Semicustom analog chip sports two metalization layers
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
146 |
Silicon epitaxial films of submicrometer thickness
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
147 |
Silicon epitaxy
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
148 |
Silver migration and the reliability of Pd/Ag conductors in thick-film dielectric crossover structures
|
|
|
1980 |
20 |
3 |
p. 389- 1 p. |
artikel |
149 |
Simplified relations for determining flat-band capacitance and impurity concentration in MOS structures
|
|
|
1980 |
20 |
3 |
p. 384- 1 p. |
artikel |
150 |
Solar-grade silicon by directional solidification in carbon crucibles
|
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|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
151 |
Some annealing properties of low-energy-antimony-implanted silicon resistors
|
|
|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
152 |
Standardisation
|
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1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
153 |
Starting and limiting values for reliability growth
|
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1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
154 |
Stochastic analysis of 2-unit system subject to two types of failure
|
Dharmadhikari, A.D. |
|
1980 |
20 |
3 |
p. 343-345 3 p. |
artikel |
155 |
Store coupling of unequal microprocessors
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
156 |
Study of the surface properties of thermally oxidized silicon using surface acoustic wave attentuation
|
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|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
157 |
Surface-acoustic-wave filters prove versatile in vhf applications
|
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|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
158 |
Surface Contamination Genesis, Detection, and Control
|
G.W.A.D., |
|
1980 |
20 |
3 |
p. 189- 1 p. |
artikel |
159 |
Surface state study of ion implanted GaAs (Se) from photoreflectance
|
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|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
160 |
Switching system maintenance—and more
|
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1980 |
20 |
3 |
p. 379- 1 p. |
artikel |
161 |
System reliability as a function of hardware flexibility
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
162 |
Temperature acceleration of CMOS IC operating life
|
Isagawa, Masaaki |
|
1980 |
20 |
3 |
p. 329-335 7 p. |
artikel |
163 |
Temperature aging of external connections condensation soldered to Ti-Pol-Au thin films
|
|
|
1980 |
20 |
3 |
p. 389- 1 p. |
artikel |
164 |
Temperature dependence of the Hall coefficient of thin films
|
|
|
1980 |
20 |
3 |
p. 388- 1 p. |
artikel |
165 |
Temperature-dependent instabilities of the electrical properties of transistors and quartz crystal oscillators in tinplated packages
|
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|
1980 |
20 |
3 |
p. 376-377 2 p. |
artikel |
166 |
Testing bare PC boards
|
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|
1980 |
20 |
3 |
p. 375-376 2 p. |
artikel |
167 |
The adherence of chromium and titanium films deposited on alumina, quartz, and glass—testing and improvement of electron-beam-deposition techniques
|
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|
1980 |
20 |
3 |
p. 391- 1 p. |
artikel |
168 |
The cell method, a new approach to multiple stuck-at-fault test generation
|
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|
1980 |
20 |
3 |
p. 380- 1 p. |
artikel |
169 |
The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques
|
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|
1980 |
20 |
3 |
p. 387- 1 p. |
artikel |
170 |
The economics of standard electronic packaging
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
171 |
The effect of RF annealing upon electron-beam irradiated MIS structures
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
172 |
The electron beam: a better way to make semiconductor masks
|
|
|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
173 |
The engineering of microprocessor systems
|
G.W.A.D., |
|
1980 |
20 |
3 |
p. 188- 1 p. |
artikel |
174 |
The interpretation of failure data using Weibull plots
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
175 |
The limitations of reactively-bonded thick film gold conductors
|
|
|
1980 |
20 |
3 |
p. 389- 1 p. |
artikel |
176 |
The MPUR mask projection and alignment repeater of VEB Carl Zeiss JENA
|
|
|
1980 |
20 |
3 |
p. 382- 1 p. |
artikel |
177 |
Theoretical estimates of the sheet resistance of Gaussian n-type ion-implanted layers in semiconductors: phosphorus in silicon
|
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|
1980 |
20 |
3 |
p. 390- 1 p. |
artikel |
178 |
Theoretical study of the raman cross section and its pressure dependence in silicon
|
|
|
1980 |
20 |
3 |
p. 385- 1 p. |
artikel |
179 |
The resistance of space-quality solder joints to thermal fatigue—Part 1
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
180 |
The temperature dependence of component failure rate
|
Blanks, H.S. |
|
1980 |
20 |
3 |
p. 297-307 11 p. |
artikel |
181 |
Thick film resistors at liquid nitrogen temperature and at microwave frequencies
|
|
|
1980 |
20 |
3 |
p. 387-388 2 p. |
artikel |
182 |
Tories changing rules of the game
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
183 |
Tunnels in semiconductor epitaxy
|
|
|
1980 |
20 |
3 |
p. 386- 1 p. |
artikel |
184 |
Two algorithms for determining the most reliable path of a network
|
|
|
1980 |
20 |
3 |
p. 378- 1 p. |
artikel |
185 |
Using infrared to analyse board faults
|
|
|
1980 |
20 |
3 |
p. 376- 1 p. |
artikel |
186 |
Vibration, shock and intense noise testing for reliability
|
|
|
1980 |
20 |
3 |
p. 377- 1 p. |
artikel |
187 |
V-MOS chip joins microprocessor to handle signals in real time
|
|
|
1980 |
20 |
3 |
p. 383- 1 p. |
artikel |
188 |
Wafers to challenge disks, bubbles?
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |
189 |
Yield improvement on L.S.I.
|
|
|
1980 |
20 |
3 |
p. 381- 1 p. |
artikel |