| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CdSe thin-film field effect transistor
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 2 |
A closer look at hybrid microcircuit screening
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 3 |
A confidence interval for the Barlow-Scheuer reliability growth model
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 4 |
A correlation interface circuit for microprocessor systems
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 5 |
Acoustic imaging for nondestructive evaluation
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 6 |
A decomposition method for computing system reliability by a matrix expression
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 7 |
A design review approach toward dynamic RAM reliability
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 8 |
Adhesion mechanisms of thick film conductors
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 9 |
Advances in double sided wafer processing
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 10 |
Advances in planar plasma etching equipment
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 11 |
A general procedure for designing tests for LSI digital circuits
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 12 |
A laser projector for edge-rounding contour measurement on polished wafers
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 13 |
A low cost reliability test specification
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 14 |
A method for determining the statistically weighted percent fault detection coverage of a self-test program
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 15 |
A method for dynamic analysis of integrated MOS inverters with non-linear resistive loads
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 16 |
A microelectronic test pattern for measuring uniformity of an integrated circuit fabrication technology
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 17 |
A minicomputer-controlled read-only-memory programmer
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 18 |
Amorphous silicon shows promise for flat-panel TV display
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 19 |
A multi-microcomputer interface
|
Wood, A.R.
|
|
1979
|
19 |
5-6 |
p. 513-522
10 p.
|
artikel
|
| 20 |
Analog ICs divide accurately to conquer computation problems
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 21 |
Analogue sampling ICs in data acquisition systems
|
Bowers, Derek F.
|
|
1979
|
19 |
5-6 |
p. 497-511
15 p.
|
artikel
|
| 22 |
Analysis of thin oxide films on silicon by back-scattering techniques
|
|
|
1979
|
19 |
5-6 |
p. 431-
1 p.
|
artikel
|
| 23 |
A new analytical expression for the T.C.R. of thin monocrystalline metal films
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 24 |
A new breed of linear ICs runs at 1-volt levels
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 25 |
A new technique for component mounting and interconnection: double face circuitry on polyimide film
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 26 |
A new ultra low power ULA and its application
|
Forshaw, P.
|
|
1979
|
19 |
5-6 |
p. 463-472
10 p.
|
artikel
|
| 27 |
An improved algorithm for network reliability
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 28 |
An improved algorithm for reliability optimization
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 29 |
Anisotropic plasma etching of semiconductor materials
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 30 |
An optical pattern generator for large area devices and direct wafer stepping
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 31 |
A note on heuristic methods in optimal system reliability
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 32 |
A note on the implementation of three-valued unary operators with C-MOS integrated circuits
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 33 |
A novel double dielectric two phase CCD with overlapping gates
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 34 |
Application of discrete Fourier transform to decision-making in reliability
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 35 |
Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon
|
|
|
1979
|
19 |
5-6 |
p. 423-424
2 p.
|
artikel
|
| 36 |
Applications for silicon tetrafluoride in plasma etching
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 37 |
Applications of thin film and thick film technologies to high microwave frequencies
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 38 |
A reliability growth model
|
|
|
1979
|
19 |
5-6 |
p. 411-412
2 p.
|
artikel
|
| 39 |
A review of microprocessor software
|
Rundle, A.R.
|
|
1979
|
19 |
5-6 |
p. 541-548
8 p.
|
artikel
|
| 40 |
Assembly technologies for hybrid integrated circuits and their mechanization
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 41 |
Automated inspection system for various defects in screenprinted patterns
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 42 |
Availability: A low-density deployment case study
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 43 |
Availability of a parallel redundant complex system
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 44 |
Availability of k-out-of-m:G repairable system with nonidentical elements
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 45 |
Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 46 |
16 bit microprocessor for the hard environment
|
Fox, R.E.
|
|
1979
|
19 |
5-6 |
p. 599-610
12 p.
|
artikel
|
| 47 |
Bubble memories demand unique test methods
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 48 |
Carrier transport across heterojunction interfaces
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 49 |
Causes of wavesoldering defects
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 50 |
Channel current limitations in GaAs MESFETS
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 51 |
Characterization of thick film compositions on porcelain steel substrates
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 52 |
Charge-transfer filtering
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 53 |
Chip handles I/O channel
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 54 |
C-MOS codec solves phone line problems with bipolar interface
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 55 |
Codec has on-chip signaling for phone applications
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 56 |
Codecs for P.C.M. processing
|
Jenkins, Mike
|
|
1979
|
19 |
5-6 |
p. 479-496
18 p.
|
artikel
|
| 57 |
Component replacement and the use of Relcode
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 58 |
Components of microcomputer systems
|
Lister, P.F.
|
|
1979
|
19 |
5-6 |
p. 433-440
8 p.
|
artikel
|
| 59 |
Computation-based reliability analysis in real time applications
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 60 |
CP-140 aircraft reliability program—A “tailored” management approach
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 61 |
Current/voltage characteristics of transistors operating in current-mode second breakdown
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 62 |
Degradation of electrical contacts caused by oscillatory micromotion between the contact members
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 63 |
Designing low power 12 bit microprocessor systems
|
Watson, David
|
|
1979
|
19 |
5-6 |
p. 575-578
4 p.
|
artikel
|
| 64 |
Design of reliability acceptance sampling plans based upon prior distribution
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 65 |
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 66 |
Determinations of MTTF from the transition probability matrix and diagram
|
|
|
1979
|
19 |
5-6 |
p. 412-413
2 p.
|
artikel
|
| 67 |
Developing the sampling plans
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 68 |
Developments in CMOS memory
|
Watson, David
|
|
1979
|
19 |
5-6 |
p. 449-452
4 p.
|
artikel
|
| 69 |
Digital signal processing and LSI in modems for data transmission
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 70 |
Discrete probability models with modified zeros
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 71 |
Dissociation of GaAs and Ga0.7Al0.3As during alloying of gold contact films
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 72 |
Disturbance caused in telecommunications cables by thyristor fitted locomotives
|
|
|
1979
|
19 |
5-6 |
p. 409-410
2 p.
|
artikel
|
| 73 |
Does DSA stand for better MOS?
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 74 |
Double-step annealing and ambient effects on phosphorus implanted emitters in silicon
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 75 |
E-beam exposure for semiconductor device lithography
|
|
|
1979
|
19 |
5-6 |
p. 419-420
2 p.
|
artikel
|
| 76 |
Effect of restricted repair on system reliability indices
|
|
|
1979
|
19 |
5-6 |
p. 414-415
2 p.
|
artikel
|
| 77 |
Effect of silicon film thickness on threshold voltage of SOS-MOSFETs
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 78 |
Effect of substrate generation current on oxide I–V measurement on p-type MOS structures
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 79 |
Effects of nitrogen annealing on electron scatterings in Si-SiO2 interface
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 80 |
Effects of trichloroethane oxidation of silicon wafers on SiO2 and Si properties
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 81 |
Eigenvalue approach for computing the reliability of Markov systems
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 82 |
Electrical conduction of silicon nitride films
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 83 |
Electrically erasable memory behaves like a fast nonvolatile RAM
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 84 |
Electrical properties of epitaxial aluminium films
|
|
|
1979
|
19 |
5-6 |
p. 427-428
2 p.
|
artikel
|
| 85 |
Electrical properties of RF sputtering systems
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 86 |
Electrode effects in electrical measurements in SiO thin films
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 87 |
Electron mobility in Si-MOSFETs with an additional implanted channel
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 88 |
Empirical Bayes estimators of reliability for lognormal failure model
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 89 |
Empirical studies of software validation
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 90 |
Engineering and technological problems of the hybrid integration
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 91 |
Engineering risk reduction in satellite programs
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 92 |
Enhancing MOS/LSI's role in analog design
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 93 |
Estimation of periodically changing failure rate
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 94 |
Estimation of reliability from multiple independent grouped censored samples with failure times known
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 95 |
Estimation of the reliability of hierarchical communication networks
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 96 |
Fabrication of microelectronics reticles
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 97 |
Factors affecting adhesion of lithographic materials
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 98 |
Fast electrical test monitors chip-package bond quality
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 99 |
Fault diagnosis in computer control systems
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 100 |
Fault isolation for modular electronic equipment
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 101 |
Film carrier assembly process
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 102 |
GaAs lasers—A family of laser structures emerging for new applications
|
Kirkby, P.A.
|
|
1979
|
19 |
5-6 |
p. 633-644
12 p.
|
artikel
|
| 103 |
Gold ion plating: A recently developed coating process
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 104 |
High productivity, high reliability electron beam welder
|
|
|
1979
|
19 |
5-6 |
p. 430-431
2 p.
|
artikel
|
| 105 |
Impact of design rule reduction on size, yield, and cost of integrated circuits
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 106 |
Improvement of adhesion, line definition, contact resistance and semiconductor properties by sputter-etching
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 107 |
Impurity effects in amorphous germanium and silicon
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 108 |
In-circuit tester using signature analysis adds digital LSI to its range
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 109 |
In-circuit unit does analog and digital testing
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 110 |
Influence of interface states on the charge injection in m.n.o.s. memory devices
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 111 |
Interactions of industrial integration and standardization
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 112 |
Interactive graphics in new product quality assurance programs
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 113 |
Introduction to microprocessor software development
|
Hunter, J.R.W.
|
|
1979
|
19 |
5-6 |
p. 441-448
8 p.
|
artikel
|
| 114 |
Liquid encapsulated compounding and Czochralski growth of semi-insulating gallium arsenide
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 115 |
Lithography chases the incredible shrinking line
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 116 |
Low-temperature vapour-phase growth of silicon dioxide
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 117 |
LSI-based data encryption discourages the data thief
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 118 |
LSI streamlines instrument interface with standard IEEE-488 bus
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 119 |
Management of satellite systems reliability program
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 120 |
Management of total reliability
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 121 |
Manual backup operations: Some behavioral aspects of human reliability
|
|
|
1979
|
19 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 122 |
Measurements and mechanisms of etchant production during the plasma oxidation of CF4 and C2F6
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 123 |
Megabit bubble-memory chip gets support from LSI family
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 124 |
Megabit bubble modules move in on mass storage
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 125 |
Memory design for micros
|
Lewis, Dave
|
|
1979
|
19 |
5-6 |
p. 453-455
3 p.
|
artikel
|
| 126 |
Microprocessor implementation of tactical modems for data transmissions over v.h.f. radios
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 127 |
Miniature programmable transversal filter using CCD/MOS technology
|
|
|
1979
|
19 |
5-6 |
p. 420-421
2 p.
|
artikel
|
| 128 |
Miniaturized thick-film RC-active filters for PCM application
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 129 |
Mobile ion instability in SiO2 films on silicon
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 130 |
Modelling I2L/MTL cells
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 131 |
Model of gas phase etching of silicon with HCl
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 132 |
Modularity is not a matter of size
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 133 |
Monolithic approach bears fruit in data conversion
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 134 |
MOS semiconductor random access memory failure rate
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 135 |
Multiband and multivalley effective-mass theory for impurities in semiconductors
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 136 |
Multiobjective optimization by the Surrogate Worth Trade-off method
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 137 |
Multiple insulator layers on GaAs studied by auger analysis
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 138 |
New crossovers using a combined film technique
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 139 |
New developments in thick film conductors
|
|
|
1979
|
19 |
5-6 |
p. 429-430
2 p.
|
artikel
|
| 140 |
New method for the electronic structure of heterojunctions—Application to the (100) Ge-GaAs interfaces
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 141 |
New optoelectronic devices and their applications
|
de Vooght, Michel
|
|
1979
|
19 |
5-6 |
p. 611-622
12 p.
|
artikel
|
| 142 |
Noise immunity of CMOS integrated circuits
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 143 |
OEM control systems
|
Hodge, Peter H.
|
|
1979
|
19 |
5-6 |
p. 535-540
6 p.
|
artikel
|
| 144 |
On fault trees and other reliability evaluation methods
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 145 |
On the surface recombination effect on some properties of semiconductor devices—Dynamic relationships
|
|
|
1979
|
19 |
5-6 |
p. 424-425
2 p.
|
artikel
|
| 146 |
On the temperature dependence of subthreshold currents in MOS electron inversion layers
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 147 |
Optimal allocation of fault detectors
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 148 |
Optimal replacement and build policies
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 149 |
Parallel processing with minicomputers increases performance, availability
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 150 |
Photochemical decomposition mechanisms for AZ-type photoresists
|
|
|
1979
|
19 |
5-6 |
p. 418-419
2 p.
|
artikel
|
| 151 |
Physical and thermodynamic properties of silicon tetrachloride
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 152 |
Plasma etch monitoring with laser interferometry
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 153 |
Porcelain-on-steel boards can launch a thousand chips
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 154 |
Practical components for fibre optic data transmission
|
Watts, J.K.
|
|
1979
|
19 |
5-6 |
p. 623-632
10 p.
|
artikel
|
| 155 |
Problems in the production and measurement of very high vacuum, especially in applications, and a new approach to measurement based on the use of field emission
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 156 |
Problems of the application of microprocessors
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 157 |
Product reliability due to random load variations at elevated temperatures
|
|
|
1979
|
19 |
5-6 |
p. 416-417
2 p.
|
artikel
|
| 158 |
Products liability in Europe: Proposed reforms: The Council of Europe Convention and the draft directive of the European Economic Community
|
|
|
1979
|
19 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 159 |
Products liability in the United Kingdom: The current situation
|
|
|
1979
|
19 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 160 |
Pulsed electron-beam processing of semiconductor devices
|
|
|
1979
|
19 |
5-6 |
p. 431-
1 p.
|
artikel
|
| 161 |
Quality improvement through defect source analysis
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 162 |
Radiation levels associated with the electron-beam metallization process
|
|
|
1979
|
19 |
5-6 |
p. 431-
1 p.
|
artikel
|
| 163 |
Rapid RMA assessment—The painless plot
|
|
|
1979
|
19 |
5-6 |
p. 422-423
2 p.
|
artikel
|
| 164 |
RC-active filters in single-layer tantalum RC-film technology
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 165 |
Reappraising CCD memories: can they stand up to RAMs?
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 166 |
Recent developments in gold conductor bonding performance and failure mechanisms
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 167 |
Recent innovations in semiconductor materials
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 168 |
Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus
|
|
|
1979
|
19 |
5-6 |
p. 426-427
2 p.
|
artikel
|
| 169 |
Reliability and maintainability growth of a modern, high performance aircraft, the F-14A
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 170 |
Reliability assessment of small signal GaAs FETS
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 171 |
Reliability based quality (RBQ) technique for evaluating the degradation of reliability during manufacturing
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 172 |
Reliability learning model: Application to color TV
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 173 |
Reliability optimization in the design of telephone networks
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 174 |
Resist materials for fine line lithography
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 175 |
Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitors
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 176 |
Screen printable inks in hybrid microelectronics: availability and physical properties
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 177 |
Screen printable inks in hybrid microelectronics: materials and their behaviour
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 178 |
Screen printing inks for high resolution rheology and printing
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 179 |
Self-consistent pseudopotential calculations of the equilibrium properties of bulk and surface Si
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 180 |
Selling reliability engineering to the company
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 181 |
Separation of surface and bulk gases in contact materials of vacuum switches—Determination of gases and effect on vacuum breakdown
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 182 |
Sequencing of diagnostic tests for fault isolation by dynamic programming
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 183 |
Silicon wafer damage—Two useful investigation techniques
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 184 |
Single-chip microcomputers with 1 million bits of information, English-language programming, and canned software are seen ahead
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 185 |
Software packages
|
Healey, Martin
|
|
1979
|
19 |
5-6 |
p. 549-554
6 p.
|
artikel
|
| 186 |
Solder bump interconnected, multiple chip, thick film hybrid for 40-character alphanumeric LCD application
|
|
|
1979
|
19 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 187 |
Some applications of molecular electronics
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 188 |
Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 189 |
Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 190 |
Some design aspects of m.o.s.l.s.i. operational amplifiers
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 191 |
Some recents advances in integrated crystal filters
|
|
|
1979
|
19 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 192 |
Special seminex 1979 edition semiconductors and microprocessors
|
Dummer, G.W.A.
|
|
1979
|
19 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 193 |
Specification of an automatic test system vs an optimum maintenance policy and equipment reliability
|
|
|
1979
|
19 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 194 |
Spectroscopic determination of the energy gaps in the inversion layer band structure on vicinal planes of Si (001)
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 195 |
Sputtering process model of deposition rate
|
|
|
1979
|
19 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 196 |
Stochastic behavior of some 2-unit redundant systems
|
|
|
1979
|
19 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 197 |
Tailoring RAM to meet the user's need
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 198 |
Technical and practical considerations of incorporating microprocessors in OEM products—A management view
|
Sambell, S.
|
|
1979
|
19 |
5-6 |
p. 523-533
11 p.
|
artikel
|
| 199 |
Temperature dependent threshold behavior of depletion mode MOSFETs—Characterization and simulation
|
|
|
1979
|
19 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 200 |
Testability analysis: Predict it more closely
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 201 |
The 8086—An advanced 16-bit microcomputer
|
Kornstein, Howard
|
|
1979
|
19 |
5-6 |
p. 591-597
7 p.
|
artikel
|
| 202 |
The application of low cost microprocessors in keyboard design
|
Lowe, John M.
|
|
1979
|
19 |
5-6 |
p. 563-569
7 p.
|
artikel
|
| 203 |
The Burr distribution as a failure model from a Bayesian approach
|
|
|
1979
|
19 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 204 |
The effect of heat treatment on unpassivated and passivated gallium arsenide surfaces
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 205 |
The expanding role of CMOS in digital L.S.I.
|
Watson, David
|
|
1979
|
19 |
5-6 |
p. 473-478
6 p.
|
artikel
|
| 206 |
The F-16 RIW program
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 207 |
The fundamental limitations of digital semiconductor technology
|
|
|
1979
|
19 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 208 |
The influence of gold when present at a silicon/silicon dioxide interface
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 209 |
The limitations of reactively-bonded thick film gold conductors
|
|
|
1979
|
19 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 210 |
The logistics of life cycle cost
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 211 |
The need for feedback of field RAM data
|
|
|
1979
|
19 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 212 |
The NOVRAM—A new concept in electrically alterable memories
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 213 |
The numerical analysis of anomalous doping profiles of phosphorus in silicon
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 214 |
The operational impact of Navy's first TAAF program
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 215 |
The race heats up in fast static RAMs
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 216 |
The recognition of latent defects in electronic circuits by measuring phase noise
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 217 |
Thermal stress in bonded joints
|
|
|
1979
|
19 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 218 |
The S9900—Mini on a chip?
|
Walsh, M.J.
|
|
1979
|
19 |
5-6 |
p. 579-590
12 p.
|
artikel
|
| 219 |
The software development notebook—A proven technique
|
|
|
1979
|
19 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 220 |
Thick film technology
|
|
|
1979
|
19 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 221 |
Title section, volume contents and author index for volume 19, 1979
|
|
|
1979
|
19 |
5-6 |
p. i-vi
nvt p.
|
artikel
|
| 222 |
Tools for building microprocessor software systems
|
Baker, Keith D.
|
|
1979
|
19 |
5-6 |
p. 555-562
8 p.
|
artikel
|
| 223 |
Top-end microprocessors—Introductory review
|
Cooke, P.
|
|
1979
|
19 |
5-6 |
p. 571-573
3 p.
|
artikel
|
| 224 |
Transition metal deep centers in GaAs, GaP and Si
|
|
|
1979
|
19 |
5-6 |
p. 425-426
2 p.
|
artikel
|
| 225 |
Transport properties of doped amorphous silicon
|
|
|
1979
|
19 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 226 |
Trimming of thin and thick film resistors
|
|
|
1979
|
19 |
5-6 |
p. 428-429
2 p.
|
artikel
|
| 227 |
Two dimensional electron GaAs at a semiconductor-semiconductor interface
|
|
|
1979
|
19 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 228 |
Two-dimensional position-sensitive photodetector with high linearity made with standard i.c.-technology
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 229 |
Universal logic gates for custom-design I.C. requirements
|
Hurst, S.L.
|
|
1979
|
19 |
5-6 |
p. 457-461
5 p.
|
artikel
|
| 230 |
VLSI and other solid-state devices. New fabrication technologies put us on the threshold of a quantum jump in IC complexity
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 231 |
VLSI shakes the foundations of computer architecture
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 232 |
V-MOS packs 16 kilobits into static random-access memory
|
|
|
1979
|
19 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 233 |
Wafer flatness: An overview of measurement considerations and equipment correlation
|
|
|
1979
|
19 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 234 |
Warranties—The easy way out
|
|
|
1979
|
19 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 235 |
What to look for in logic timing analyzers
|
|
|
1979
|
19 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 236 |
Yield-area analysis: Part II—Effects of photomask alignment errors on zero yield loci
|
|
|
1979
|
19 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 237 |
Zero bias anomaly in tunnel resistance and electron-electron interaction
|
|
|
1979
|
19 |
5-6 |
p. 425-
1 p.
|
artikel
|
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