nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A built-in self-test and self-adjustment method of MEMS pressure sensor
|
Zhu, Manhong |
|
|
136 |
C |
p. |
artikel |
2 |
Analysis of electrically conductive adhesives in shingled solar modules by X-ray imaging techniques
|
Hartweg, Barry |
|
|
136 |
C |
p. |
artikel |
3 |
An efficient structure to improve the reliability of deep neural networks on ARMs
|
Liu, Zhi |
|
|
136 |
C |
p. |
artikel |
4 |
An equivalent circuit model of HCI effect for short-channel N-MOSFET
|
Zhang, Jun-an |
|
|
136 |
C |
p. |
artikel |
5 |
BEoL stack robustness investigations utilizing Cu-pillar immobilization and micromechanical loading methods
|
Silomon, Jendrik |
|
|
136 |
C |
p. |
artikel |
6 |
Composite powders with carbon nanotubes for laser printing of electronics
|
Słoma, Marcin |
|
|
136 |
C |
p. |
artikel |
7 |
Detailed total ionizing dose effects on LDMOS transistors
|
Houadef, Ali |
|
|
136 |
C |
p. |
artikel |
8 |
Editorial Board
|
|
|
|
136 |
C |
p. |
artikel |
9 |
EEPROM endurance degradation at different temperatures: State of the art TCAD simulation
|
Matteo, Franck |
|
|
136 |
C |
p. |
artikel |
10 |
Effects of multi-factors on the junction temperature of LED automotive lamp chips
|
Xiao, Yuanbin |
|
|
136 |
C |
p. |
artikel |
11 |
Elucidating the large variation in ion diffusivity of microelectronic packaging materials
|
Herrmann, A. |
|
|
136 |
C |
p. |
artikel |
12 |
Error correction improvement based on weak-bit-flipping for resistive memories
|
Gherman, Valentin |
|
|
136 |
C |
p. |
artikel |
13 |
Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress
|
Zhang, Yuan-Lan |
|
|
136 |
C |
p. |
artikel |
14 |
Finite element thermal modelling of power MOSFET packages
|
Cioban, R. |
|
|
136 |
C |
p. |
artikel |
15 |
Influence of gate voltage dependent piezoelectric polarization on damage effect of GaN HEMT induced by high power electromagnetic pulse
|
Wang, Lei |
|
|
136 |
C |
p. |
artikel |
16 |
Low actuation voltage cantilever-type RF-MEMS shunt switches for 5G applications
|
Saleh, Heba |
|
|
136 |
C |
p. |
artikel |
17 |
Microstructure evolution and mechanical behavior of copper through‑silicon via structure under thermal cyclic loading
|
Lei, Mingqi |
|
|
136 |
C |
p. |
artikel |
18 |
Optimizing the on-chip electrostatic discharge protection device by Taguchi's methodology
|
Huang, Shao-Chang |
|
|
136 |
C |
p. |
artikel |
19 |
Panel level IC-package technology development
|
Fang, Jen-Kuang |
|
|
136 |
C |
p. |
artikel |
20 |
Read latency decrease schemes based on check node error rate for 3D NAND flash memories
|
Li, Qianhui |
|
|
136 |
C |
p. |
artikel |
21 |
Reliability analysis of degrading systems based on time-varying copula
|
Yang, Chengqiang |
|
|
136 |
C |
p. |
artikel |
22 |
Residual strain around a through-silicon via
|
Coppeta, R.A. |
|
|
136 |
C |
p. |
artikel |
23 |
Soft error mechanism in SOI D flip-flop induced by space electrostatic discharge
|
Yuan, Run-Jie |
|
|
136 |
C |
p. |
artikel |
24 |
Suppression strategy for process-induced warpage of novel fan-out wafer level packaging
|
Yu, Ching-Feng |
|
|
136 |
C |
p. |
artikel |
25 |
Transient risk of water layer formation on PCBAs in different climates: Climate data analysis and experimental study
|
Conseil-Gudla, Helene |
|
|
136 |
C |
p. |
artikel |
26 |
Using checksum to improve the reliability of embedded convolutional neural networks
|
Liu, Zhi |
|
|
136 |
C |
p. |
artikel |
27 |
Verification of creep properties and rupture lifetime evaluation methods using small diameter Sn-3.0Ag-0.5Cu/Sn-58Bi/Sn-5Sb specimens
|
Hiyoshi, Noritake |
|
|
136 |
C |
p. |
artikel |