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                             20 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A highly reliable radiation hardened 8T SRAM cell design Lv, Yinghuan

125 C p.
artikel
2 Degradation of AIIIBV/Ge triple junction solar cells irradiated by gamma-rays, electrons and neutrons Ryabtseva, M.V.

125 C p.
artikel
3 Editorial Board
125 C p.
artikel
4 Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown Mazza, B.

125 C p.
artikel
5 Hydrothermal growth method for the deposition of ZnO films: Structural, chemical and optical studies Krajian, H.

125 C p.
artikel
6 Large array device characteristics improvements Huang, Shao-Chang

125 C p.
artikel
7 Memoryless linearity in undoped and B-doped graphene FETs: A relative investigation to report improved reliability Chandrasekar, L.

125 C p.
artikel
8 Migration of adhesive material in electrostatically actuated MEMS switch Uvarov, Ilia V.

125 C p.
artikel
9 Modeling of interface trap charges induced degradation in underlap DG and GAA MOSFETs Agrawal, Sonal

125 C p.
artikel
10 Modeling of MEMS Electrothermal Microgripper employing POD-DEIM and POD method Roy, Ananya

125 C p.
artikel
11 Numerical simulation of reliability of 2.5D/3D package interconnect structure under temperature cyclic load Liu, Yang

125 C p.
artikel
12 Observation of photoemission behaviour during avalanche breakdown of insulated gate bipolar transistor with defect in the metal contact Endo, Koichi

125 C p.
artikel
13 Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC Gunaydin, Yasin

125 C p.
artikel
14 Pitfalls for transient response analysis with VF-TLP Smedes, Theo

125 C p.
artikel
15 Quantifying flux residues after soldering on technical copper using ultraviolet visible (UV–Vis) spectroscopy and multivariate analysis Englert, Tim

125 C p.
artikel
16 Reliability analysis of a fault-tolerant RISC-V system-on-chip Santos, Douglas Almeida

125 C p.
artikel
17 Single event effects of SiC diode demonstrated by pulsed-laser two photon absorption Shangguan, ShiPeng

125 C p.
artikel
18 Solder joints reliability of through hole assemblies with various land and hole design Sobolewski, Maciej

125 C p.
artikel
19 Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains Wu, Zhenyu

125 C p.
artikel
20 Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes Zhu, Min

125 C p.
artikel
                             20 gevonden resultaten
 
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