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       All volumes of the corresponding journal
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                                       All articles of the corresponding issues
 
                             107 results found
no title author magazine year volume issue page(s) type
1 A computer-aided design system services operation 1973
 12 4 p. 276-
1 p.
 article
2 A fast method for redundancy allocation Misra, K.B.
 1973
 12 4 p. 385-387
3 p.
 article
3 A guide to hybrid-circuit component compatibility 1973
 12 4 p. 281-
1 p.
 article
4 A method of redundancy allocation Misra, K.B.
 1973
 12 4 p. 389-393
5 p.
 article
5 A method to evaluate the electrical stability of TTL gates 1973
 12 4 p. 276-
1 p.
 article
6 A model of the p-n junction with exponential doping profile 1973
 12 4 p. 280-
1 p.
 article
7 Analytic study of a stand-by redundant equipment with switching and shelf life failures Prakash, S.
 1973
 12 4 p. 329-335
7 p.
 article
8 An experimental determination of the carrier lifetime near the Si-SiO2 interface 1973
 12 4 p. 279-
1 p.
 article
9 Announcement 1973
 12 4 p. i-
1 p.
 article
10 A review of new methods and attitudes in reliability engineering Blanks, H.S.
 1973
 12 4 p. 301-319
19 p.
 article
11 Avalanche breakdown voltage of multiple epitaxial pn junctions 1973
 12 4 p. 274-
1 p.
 article
12 Calendar of International Conferences, Symposia, Lectures and Meetings of Interest 1973
 12 4 p. 255-256
2 p.
 article
13 Chalcogenide glass threshold switch 1973
 12 4 p. 277-
1 p.
 article
14 Changes in thick-film resistor values due to substrate flexure Holmes, P.J.
 1973
 12 4 p. 395-396
2 p.
 article
15 Check your logic behaviour with automatic test generation 1973
 12 4 p. 275-
1 p.
 article
16 Chemical shift parameters for shallow donors in semiconductors 1973
 12 4 p. 280-
1 p.
 article
17 Circuit simulation by computer 1973
 12 4 p. 276-
1 p.
 article
18 Color television swinging to in-line tubes as complex ICs widen consumer market 1973
 12 4 p. 277-
1 p.
 article
19 Complex system reliability with general repair time distributions under preemptive resume repair discipline Gupta, P.P.
 1973
 12 4 p. 351-356
6 p.
 article
20 Computer control of diffusion systems 1973
 12 4 p. 280-
1 p.
 article
21 Control of impurity density in homoepitaxial semiconductor layers grown by sublimation at UHV 1973
 12 4 p. 281-
1 p.
 article
22 Courses 1973
 12 4 p. 259-261
3 p.
 article
23 Custom logic is provided on standard chip 1973
 12 4 p. 276-
1 p.
 article
24 Degradation mechanisms of mechanical connectors on aluminium conductors 1973
 12 4 p. 273-
1 p.
 article
25 Development of generalized theory of floating-emitter potential based on studies of germanium and silicon transistors Bora, J.S.
 1973
 12 4 p. 343-350
8 p.
 article
26 Distribution of time to non-availability of a reliability system Singh, N.
 1973
 12 4 p. 337-342
6 p.
 article
27 Don't get burned! Watch the heat when testing IC voltage regulators, or your results may not match the manufacturer's specifications 1973
 12 4 p. 278-
1 p.
 article
28 Dual-polarity IC regulators aid design and packaging 1973
 12 4 p. 276-
1 p.
 article
29 Editorial Dummer, G.W.A.
 1973
 12 4 p. 253-
1 p.
 article
30 Elastic constants and raman frequencies of heavily doped Si under uniaxial stress 1973
 12 4 p. 281-
1 p.
 article
31 Electrical contacts in telephone exchanges: contact opening and closing phenomena and quenching techniques. Part 3: practical quenching, laboratory tests and investigations into service failures 1973
 12 4 p. 273-274
2 p.
 article
32 Electrical effects of clustered defects in heteroepitaxial Si films 1973
 12 4 p. 274-275
2 p.
 article
33 Electron energy relaxation time in Si and Ge 1973
 12 4 p. 280-
1 p.
 article
34 Electronic Maintenance Management 1973
 12 4 p. 270-272
3 p.
 article
35 Electronics and environments G.W.A.D.,
 1973
 12 4 p. 286-
1 p.
 article
36 Enhancing an LSI computer to handle decimal data 1973
 12 4 p. 278-
1 p.
 article
37 Epoxy package increases IC reliability at no extra cost 1973
 12 4 p. 274-
1 p.
 article
38 European equipment makers turn to hybrid circuits 1973
 12 4 p. 275-
1 p.
 article
39 Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and silicon 1973
 12 4 p. 279-
1 p.
 article
40 Field ion microscopy 1973
 12 4 p. 283-
1 p.
 article
41 Flat, flexible cable makes excellent IC interface 1973
 12 4 p. 276-
1 p.
 article
42 Functional redundancy assures greater system reliability 1973
 12 4 p. 275-
1 p.
 article
43 Growth of germanium films on glass 1973
 12 4 p. 282-
1 p.
 article
44 Hybrid thick-film circuits 1973
 12 4 p. 282-
1 p.
 article
45 IC makers speed JAN qualifications 1973
 12 4 p. 275-
1 p.
 article
46 IC makers stepping up LSI output due to brisk calculator demands 1973
 12 4 p. 275-
1 p.
 article
47 IC multiplexer increases analogue switching speeds 1973
 12 4 p. 276-
1 p.
 article
48 Integrated circuit aimed at car speedometer market 1973
 12 4 p. 277-
1 p.
 article
49 Integrated circuit development 1973
 12 4 p. 275-
1 p.
 article
50 Integrated circuits for analogue systems 1973
 12 4 p. 277-
1 p.
 article
51 International Society for Hybrid Microelectronics Wood, J.
 1973
 12 4 p. 269-
1 p.
 article
52 Investigations on “doping stacking fault” pyramids 1973
 12 4 p. 274-
1 p.
 article
53 Ion-implanted bipolar transistor carrier concentration profiles 1973
 12 4 p. 283-
1 p.
 article
54 Leadless, pluggable IC packages reduce fabrication and repair costs 1973
 12 4 p. 276-
1 p.
 article
55 Materials development improves thick-film reliability 1973
 12 4 p. 281-282
2 p.
 article
56 Meaning and measurement of throughput 1973
 12 4 p. 275-
1 p.
 article
57 Microelectronic devices for surgical implantation 1973
 12 4 p. 277-
1 p.
 article
58 Microelectronic interconnection bonding with ribbon wire G.W.A.D.,
 1973
 12 4 p. 285-
1 p.
 article
59 Microelectronics today 1973
 12 4 p. 275-
1 p.
 article
60 Microwave characteristics of ion-implanted bipolar transistors 1973
 12 4 p. 283-
1 p.
 article
61 MOS chip plus level-shifting circuit drives gasdischarge display 1973
 12 4 p. 278-
1 p.
 article
62 MOS subsystems prise open the v.d.u. market 1973
 12 4 p. 278-
1 p.
 article
63 Multiple fault detection in large logical networks 1973
 12 4 p. 275-
1 p.
 article
64 Notice 1973
 12 4 p. 257-
1 p.
 article
65 Notices and calls for papers 1973
 12 4 p. 263-267
5 p.
 article
66 Numerical method for the solution of the transient behaviour of bipolar semiconductor devices 1973
 12 4 p. 279-
1 p.
 article
67 Optimum crystallographic orientation for silicon device fabrication 1973
 12 4 p. 281-
1 p.
 article
68 Oxide isolation brings high density to production bipolar memories 1973
 12 4 p. 281-
1 p.
 article
69 Papers to be published in future issues 1973
 12 4 p. 287-
1 p.
 article
70 Partial disorder in evaporated aluminium films 1973
 12 4 p. 282-
1 p.
 article
71 Physical properties of semiconductor industry chlorosilanes 1973
 12 4 p. 278-
1 p.
 article
72 Positron lifetimes in proton-irradiated silicon 1973
 12 4 p. 281-
1 p.
 article
73 Propagating magnetic waves in thick-films. A complementary technology to surface wave acoustics 1973
 12 4 p. 282-
1 p.
 article
74 Properties of silicon implanted with boron ions through thermal silicon dioxide 1973
 12 4 p. 278-
1 p.
 article
75 Quality and reliability of mullard resistors and capacitors G.W.A.D.,
 1973
 12 4 p. 286-
1 p.
 article
76 Relating factory test failure results to field reliability, required field maintenance, and to total life cycle costs Ryerson, C.M.
 1973
 12 4 p. 357-384
28 p.
 article
77 Reliability of a quasi-redundant electronic system with “standby” in the main unit Sawhney, Sudesh
 1973
 12 4 p. 289-300
12 p.
 article
78 ROMs cut cost, response time of m-out-of-N detectors 1973
 12 4 p. 277-
1 p.
 article
79 Segregation of dissolved Li to the surface of Si: a new activation process 1973
 12 4 p. 279-
1 p.
 article
80 Semiconductor and semi-insulator resistivity measurements using a direct current four-point probe apparatus with non-penetrating tips 1973
 12 4 p. 281-
1 p.
 article
81 Size-effect parameters for thin-films of the aluminium group metals 1973
 12 4 p. 282-
1 p.
 article
82 Solid state circuits G.W.A.D.,
 1973
 12 4 p. 285-
1 p.
 article
83 Stand-by redundancy complex system's reliability Garg, R.C.
 1973
 12 4 p. 321-328
8 p.
 article
84 Structural features of alloyed contacts to GaAs 1973
 12 4 p. 276-
1 p.
 article
85 Television front-end using integrated circuit TCA270 synchronous demodulator 1973
 12 4 p. 277-
1 p.
 article
86 The BS 9000 system for electronic components of assessed quality 1973
 12 4 p. 274-
1 p.
 article
87 The classification and quality control of thin-films by the recognition of X-ray diffraction lines 1973
 12 4 p. 282-
1 p.
 article
88 The economics of reliability testing 1973
 12 4 p. 273-
1 p.
 article
89 The effect of a buried layer on the collector breakdown voltages of bipolar junction transistors 1973
 12 4 p. 274-
1 p.
 article
90 The effect of stress on metal semiconductor junctions 1973
 12 4 p. 279-280
2 p.
 article
91 The electrical properties of anodically grown silicon dioxide films 1973
 12 4 p. 278-279
2 p.
 article
92 The influence of semiconductor devices on the evolution of computer systems 1973
 12 4 p. 277-
1 p.
 article
93 The influence of substrate properties on microwave losses in thin-films of semiconductors 1973
 12 4 p. 283-
1 p.
 article
94 The MNOS-LAD (metal-nitride-oxide-silicon avalanche diode)—a new semiconductor storage element 1973
 12 4 p. 278-
1 p.
 article
95 The new minicomputers: faster, sophisticated and a choice of MOS or bipolar memories 1973
 12 4 p. 276-
1 p.
 article
96 Thermal considerations in the design of hybrid microelectronic packages 1973
 12 4 p. 282-
1 p.
 article
97 The struggle for power, frequency and bandwidth 1973
 12 4 p. 275-
1 p.
 article
98 The technology of semiconductor manufacture 1973
 12 4 p. 279-
1 p.
 article
99 The technology of semiconductor materials preparation 1973
 12 4 p. 279-
1 p.
 article
100 Thick-film switches perform semiconductor functions 1973
 12 4 p. 282-
1 p.
 article
101 Threshold voltage of non-uniformly doped MOS structures 1973
 12 4 p. 279-
1 p.
 article
102 Transition-capacitance calculations for double-diffused p-n junctions 1973
 12 4 p. 280-281
2 p.
 article
103 Two-level capacitor boosts MOS memory performance 1973
 12 4 p. 276-
1 p.
 article
104 Use current-mode IC amplifiers 1973
 12 4 p. 278-
1 p.
 article
105 Using thick-film for power amplifiers 1973
 12 4 p. 281-
1 p.
 article
106 What cost quality? 1973
 12 4 p. 273-
1 p.
 article
107 With LSI you'll get more instrument punch in a much smaller package at a lower price 1973
 12 4 p. 277-
1 p.
 article
                             107 results found
 
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