| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer-aided design system services operation
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 2 |
A fast method for redundancy allocation
|
Misra, K.B.
|
|
1973
|
12 |
4 |
p. 385-387
3 p.
|
artikel
|
| 3 |
A guide to hybrid-circuit component compatibility
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 4 |
A method of redundancy allocation
|
Misra, K.B.
|
|
1973
|
12 |
4 |
p. 389-393
5 p.
|
artikel
|
| 5 |
A method to evaluate the electrical stability of TTL gates
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 6 |
A model of the p-n junction with exponential doping profile
|
|
|
1973
|
12 |
4 |
p. 280-
1 p.
|
artikel
|
| 7 |
Analytic study of a stand-by redundant equipment with switching and shelf life failures
|
Prakash, S.
|
|
1973
|
12 |
4 |
p. 329-335
7 p.
|
artikel
|
| 8 |
An experimental determination of the carrier lifetime near the Si-SiO2 interface
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 9 |
Announcement
|
|
|
1973
|
12 |
4 |
p. i-
1 p.
|
artikel
|
| 10 |
A review of new methods and attitudes in reliability engineering
|
Blanks, H.S.
|
|
1973
|
12 |
4 |
p. 301-319
19 p.
|
artikel
|
| 11 |
Avalanche breakdown voltage of multiple epitaxial pn junctions
|
|
|
1973
|
12 |
4 |
p. 274-
1 p.
|
artikel
|
| 12 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1973
|
12 |
4 |
p. 255-256
2 p.
|
artikel
|
| 13 |
Chalcogenide glass threshold switch
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 14 |
Changes in thick-film resistor values due to substrate flexure
|
Holmes, P.J.
|
|
1973
|
12 |
4 |
p. 395-396
2 p.
|
artikel
|
| 15 |
Check your logic behaviour with automatic test generation
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 16 |
Chemical shift parameters for shallow donors in semiconductors
|
|
|
1973
|
12 |
4 |
p. 280-
1 p.
|
artikel
|
| 17 |
Circuit simulation by computer
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 18 |
Color television swinging to in-line tubes as complex ICs widen consumer market
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 19 |
Complex system reliability with general repair time distributions under preemptive resume repair discipline
|
Gupta, P.P.
|
|
1973
|
12 |
4 |
p. 351-356
6 p.
|
artikel
|
| 20 |
Computer control of diffusion systems
|
|
|
1973
|
12 |
4 |
p. 280-
1 p.
|
artikel
|
| 21 |
Control of impurity density in homoepitaxial semiconductor layers grown by sublimation at UHV
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 22 |
Courses
|
|
|
1973
|
12 |
4 |
p. 259-261
3 p.
|
artikel
|
| 23 |
Custom logic is provided on standard chip
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 24 |
Degradation mechanisms of mechanical connectors on aluminium conductors
|
|
|
1973
|
12 |
4 |
p. 273-
1 p.
|
artikel
|
| 25 |
Development of generalized theory of floating-emitter potential based on studies of germanium and silicon transistors
|
Bora, J.S.
|
|
1973
|
12 |
4 |
p. 343-350
8 p.
|
artikel
|
| 26 |
Distribution of time to non-availability of a reliability system
|
Singh, N.
|
|
1973
|
12 |
4 |
p. 337-342
6 p.
|
artikel
|
| 27 |
Don't get burned! Watch the heat when testing IC voltage regulators, or your results may not match the manufacturer's specifications
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 28 |
Dual-polarity IC regulators aid design and packaging
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 29 |
Editorial
|
Dummer, G.W.A.
|
|
1973
|
12 |
4 |
p. 253-
1 p.
|
artikel
|
| 30 |
Elastic constants and raman frequencies of heavily doped Si under uniaxial stress
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 31 |
Electrical contacts in telephone exchanges: contact opening and closing phenomena and quenching techniques. Part 3: practical quenching, laboratory tests and investigations into service failures
|
|
|
1973
|
12 |
4 |
p. 273-274
2 p.
|
artikel
|
| 32 |
Electrical effects of clustered defects in heteroepitaxial Si films
|
|
|
1973
|
12 |
4 |
p. 274-275
2 p.
|
artikel
|
| 33 |
Electron energy relaxation time in Si and Ge
|
|
|
1973
|
12 |
4 |
p. 280-
1 p.
|
artikel
|
| 34 |
Electronic Maintenance Management
|
|
|
1973
|
12 |
4 |
p. 270-272
3 p.
|
artikel
|
| 35 |
Electronics and environments
|
G.W.A.D.,
|
|
1973
|
12 |
4 |
p. 286-
1 p.
|
artikel
|
| 36 |
Enhancing an LSI computer to handle decimal data
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 37 |
Epoxy package increases IC reliability at no extra cost
|
|
|
1973
|
12 |
4 |
p. 274-
1 p.
|
artikel
|
| 38 |
European equipment makers turn to hybrid circuits
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 39 |
Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and silicon
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 40 |
Field ion microscopy
|
|
|
1973
|
12 |
4 |
p. 283-
1 p.
|
artikel
|
| 41 |
Flat, flexible cable makes excellent IC interface
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 42 |
Functional redundancy assures greater system reliability
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 43 |
Growth of germanium films on glass
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 44 |
Hybrid thick-film circuits
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 45 |
IC makers speed JAN qualifications
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 46 |
IC makers stepping up LSI output due to brisk calculator demands
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 47 |
IC multiplexer increases analogue switching speeds
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 48 |
Integrated circuit aimed at car speedometer market
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 49 |
Integrated circuit development
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 50 |
Integrated circuits for analogue systems
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 51 |
International Society for Hybrid Microelectronics
|
Wood, J.
|
|
1973
|
12 |
4 |
p. 269-
1 p.
|
artikel
|
| 52 |
Investigations on “doping stacking fault” pyramids
|
|
|
1973
|
12 |
4 |
p. 274-
1 p.
|
artikel
|
| 53 |
Ion-implanted bipolar transistor carrier concentration profiles
|
|
|
1973
|
12 |
4 |
p. 283-
1 p.
|
artikel
|
| 54 |
Leadless, pluggable IC packages reduce fabrication and repair costs
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 55 |
Materials development improves thick-film reliability
|
|
|
1973
|
12 |
4 |
p. 281-282
2 p.
|
artikel
|
| 56 |
Meaning and measurement of throughput
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 57 |
Microelectronic devices for surgical implantation
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 58 |
Microelectronic interconnection bonding with ribbon wire
|
G.W.A.D.,
|
|
1973
|
12 |
4 |
p. 285-
1 p.
|
artikel
|
| 59 |
Microelectronics today
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 60 |
Microwave characteristics of ion-implanted bipolar transistors
|
|
|
1973
|
12 |
4 |
p. 283-
1 p.
|
artikel
|
| 61 |
MOS chip plus level-shifting circuit drives gasdischarge display
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 62 |
MOS subsystems prise open the v.d.u. market
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 63 |
Multiple fault detection in large logical networks
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 64 |
Notice
|
|
|
1973
|
12 |
4 |
p. 257-
1 p.
|
artikel
|
| 65 |
Notices and calls for papers
|
|
|
1973
|
12 |
4 |
p. 263-267
5 p.
|
artikel
|
| 66 |
Numerical method for the solution of the transient behaviour of bipolar semiconductor devices
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 67 |
Optimum crystallographic orientation for silicon device fabrication
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 68 |
Oxide isolation brings high density to production bipolar memories
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 69 |
Papers to be published in future issues
|
|
|
1973
|
12 |
4 |
p. 287-
1 p.
|
artikel
|
| 70 |
Partial disorder in evaporated aluminium films
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 71 |
Physical properties of semiconductor industry chlorosilanes
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 72 |
Positron lifetimes in proton-irradiated silicon
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 73 |
Propagating magnetic waves in thick-films. A complementary technology to surface wave acoustics
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 74 |
Properties of silicon implanted with boron ions through thermal silicon dioxide
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 75 |
Quality and reliability of mullard resistors and capacitors
|
G.W.A.D.,
|
|
1973
|
12 |
4 |
p. 286-
1 p.
|
artikel
|
| 76 |
Relating factory test failure results to field reliability, required field maintenance, and to total life cycle costs
|
Ryerson, C.M.
|
|
1973
|
12 |
4 |
p. 357-384
28 p.
|
artikel
|
| 77 |
Reliability of a quasi-redundant electronic system with “standby” in the main unit
|
Sawhney, Sudesh
|
|
1973
|
12 |
4 |
p. 289-300
12 p.
|
artikel
|
| 78 |
ROMs cut cost, response time of m-out-of-N detectors
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 79 |
Segregation of dissolved Li to the surface of Si: a new activation process
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 80 |
Semiconductor and semi-insulator resistivity measurements using a direct current four-point probe apparatus with non-penetrating tips
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 81 |
Size-effect parameters for thin-films of the aluminium group metals
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 82 |
Solid state circuits
|
G.W.A.D.,
|
|
1973
|
12 |
4 |
p. 285-
1 p.
|
artikel
|
| 83 |
Stand-by redundancy complex system's reliability
|
Garg, R.C.
|
|
1973
|
12 |
4 |
p. 321-328
8 p.
|
artikel
|
| 84 |
Structural features of alloyed contacts to GaAs
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 85 |
Television front-end using integrated circuit TCA270 synchronous demodulator
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 86 |
The BS 9000 system for electronic components of assessed quality
|
|
|
1973
|
12 |
4 |
p. 274-
1 p.
|
artikel
|
| 87 |
The classification and quality control of thin-films by the recognition of X-ray diffraction lines
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 88 |
The economics of reliability testing
|
|
|
1973
|
12 |
4 |
p. 273-
1 p.
|
artikel
|
| 89 |
The effect of a buried layer on the collector breakdown voltages of bipolar junction transistors
|
|
|
1973
|
12 |
4 |
p. 274-
1 p.
|
artikel
|
| 90 |
The effect of stress on metal semiconductor junctions
|
|
|
1973
|
12 |
4 |
p. 279-280
2 p.
|
artikel
|
| 91 |
The electrical properties of anodically grown silicon dioxide films
|
|
|
1973
|
12 |
4 |
p. 278-279
2 p.
|
artikel
|
| 92 |
The influence of semiconductor devices on the evolution of computer systems
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
| 93 |
The influence of substrate properties on microwave losses in thin-films of semiconductors
|
|
|
1973
|
12 |
4 |
p. 283-
1 p.
|
artikel
|
| 94 |
The MNOS-LAD (metal-nitride-oxide-silicon avalanche diode)—a new semiconductor storage element
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 95 |
The new minicomputers: faster, sophisticated and a choice of MOS or bipolar memories
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 96 |
Thermal considerations in the design of hybrid microelectronic packages
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 97 |
The struggle for power, frequency and bandwidth
|
|
|
1973
|
12 |
4 |
p. 275-
1 p.
|
artikel
|
| 98 |
The technology of semiconductor manufacture
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 99 |
The technology of semiconductor materials preparation
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 100 |
Thick-film switches perform semiconductor functions
|
|
|
1973
|
12 |
4 |
p. 282-
1 p.
|
artikel
|
| 101 |
Threshold voltage of non-uniformly doped MOS structures
|
|
|
1973
|
12 |
4 |
p. 279-
1 p.
|
artikel
|
| 102 |
Transition-capacitance calculations for double-diffused p-n junctions
|
|
|
1973
|
12 |
4 |
p. 280-281
2 p.
|
artikel
|
| 103 |
Two-level capacitor boosts MOS memory performance
|
|
|
1973
|
12 |
4 |
p. 276-
1 p.
|
artikel
|
| 104 |
Use current-mode IC amplifiers
|
|
|
1973
|
12 |
4 |
p. 278-
1 p.
|
artikel
|
| 105 |
Using thick-film for power amplifiers
|
|
|
1973
|
12 |
4 |
p. 281-
1 p.
|
artikel
|
| 106 |
What cost quality?
|
|
|
1973
|
12 |
4 |
p. 273-
1 p.
|
artikel
|
| 107 |
With LSI you'll get more instrument punch in a much smaller package at a lower price
|
|
|
1973
|
12 |
4 |
p. 277-
1 p.
|
artikel
|
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