| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A behavioral model for MCT surge current analysis in pulse discharge
|
Chen, Wanjun
|
|
2014
|
99 |
C |
p. 31-37
7 p.
|
artikel
|
| 2 |
Amorphous bilayer TiO2–InGaZnO thin film transistors with low drive voltage
|
Hsu, Hsiao-Hsuan
|
|
2014
|
99 |
C |
p. 51-54
4 p.
|
artikel
|
| 3 |
Correlation between barrier inhomogeneities of 4H-SiC 1A/600V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS
|
Gelczuk, Ł.
|
|
2014
|
99 |
C |
p. 1-6
6 p.
|
artikel
|
| 4 |
2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
|
Schwarz, Mike
|
|
2014
|
99 |
C |
p. 65-77
13 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2014
|
99 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model
|
Bazigos, Antonios
|
|
2014
|
99 |
C |
p. 93-100
8 p.
|
artikel
|
| 7 |
Enhancement-mode Lg =50nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408GHz
|
Li, Ming
|
|
2014
|
99 |
C |
p. 7-10
4 p.
|
artikel
|
| 8 |
Extraction of second harmonic from the In0.53Ga0.47As planar Gunn diode using radial stub resonators
|
Maricar, Mohamed Ismaeel
|
|
2014
|
99 |
C |
p. 38-40
3 p.
|
artikel
|
| 9 |
Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices
|
Shin, Minju
|
|
2014
|
99 |
C |
p. 104-107
4 p.
|
artikel
|
| 10 |
Growth and characterization of UTC photo-diodes containing GaAs1− x Bi x absorber layer
|
Geižutis, Andrejus
|
|
2014
|
99 |
C |
p. 101-103
3 p.
|
artikel
|
| 11 |
High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
|
Colón, Albert
|
|
2014
|
99 |
C |
p. 25-30
6 p.
|
artikel
|
| 12 |
Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer
|
Liou, Jian-Kai
|
|
2014
|
99 |
C |
p. 21-24
4 p.
|
artikel
|
| 13 |
Investigation on the effect of tunnel oxide nitridation to threshold voltage instability mechanisms of nanoscale CT NVM
|
Lee, Meng Chuan
|
|
2014
|
99 |
C |
p. 78-83
6 p.
|
artikel
|
| 14 |
Lower activation energy in organic field effect transistors with carbon nanotube contacts
|
Sarker, Biddut K.
|
|
2014
|
99 |
C |
p. 55-58
4 p.
|
artikel
|
| 15 |
Low temperature acetone detection by p-type nano-titania thin film: Equivalent circuit model and sensing mechanism
|
Bhowmik, B.
|
|
2014
|
99 |
C |
p. 84-92
9 p.
|
artikel
|
| 16 |
On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes
|
Wang, C.K.
|
|
2014
|
99 |
C |
p. 11-15
5 p.
|
artikel
|
| 17 |
Operation mechanism investigation of electrochromic display devices using tungsten oxides based on solid-state metal–oxide–metal capacitor structures
|
Cheng, Chin-Pao
|
|
2014
|
99 |
C |
p. 16-20
5 p.
|
artikel
|
| 18 |
Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication process
|
Dominguez, Miguel
|
|
2014
|
99 |
C |
p. 45-50
6 p.
|
artikel
|
| 19 |
Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure
|
Wang, Qingpeng
|
|
2014
|
99 |
C |
p. 59-64
6 p.
|
artikel
|
| 20 |
Self heating in Si0.5Ge0.5/Si and GaAs/Si thin film device structures
|
Zheng, H.
|
|
2014
|
99 |
C |
p. 41-44
4 p.
|
artikel
|
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