| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
|
Cheralathan, Muthupandian
|
|
2014
|
98 |
C |
p. 2-6
5 p.
|
artikel
|
| 2 |
Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs
|
Wang, Xingsheng
|
|
2014
|
98 |
C |
p. 99-105
7 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2014
|
98 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology
|
Dentoni Litta, Eugenio
|
|
2014
|
98 |
C |
p. 20-25
6 p.
|
artikel
|
| 5 |
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm
|
Najmzadeh, Mohammad
|
|
2014
|
98 |
C |
p. 55-62
8 p.
|
artikel
|
| 6 |
Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry
|
Shah, V.A.
|
|
2014
|
98 |
C |
p. 93-98
6 p.
|
artikel
|
| 7 |
In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
|
Achour, H.
|
|
2014
|
98 |
C |
p. 12-19
8 p.
|
artikel
|
| 8 |
Integration aspects of strained Ge pFETs
|
Witters, L.
|
|
2014
|
98 |
C |
p. 7-11
5 p.
|
artikel
|
| 9 |
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model
|
Maiorano, P.
|
|
2014
|
98 |
C |
p. 45-49
5 p.
|
artikel
|
| 10 |
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors
|
Pittino, F.
|
|
2014
|
98 |
C |
p. 63-69
7 p.
|
artikel
|
| 11 |
Prospects for SiGe thermoelectric generators
|
Samarelli, A.
|
|
2014
|
98 |
C |
p. 70-74
5 p.
|
artikel
|
| 12 |
Selected papers from ULIS 2013
|
Leadley, David
|
|
2014
|
98 |
C |
p. 1-
1 p.
|
artikel
|
| 13 |
Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions
|
Richter, S.
|
|
2014
|
98 |
C |
p. 75-80
6 p.
|
artikel
|
| 14 |
Silicon nanowires integrated with CMOS circuits for biosensing application
|
Jayakumar, G.
|
|
2014
|
98 |
C |
p. 26-31
6 p.
|
artikel
|
| 15 |
Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics
|
Knoll, L.
|
|
2014
|
98 |
C |
p. 32-37
6 p.
|
artikel
|
| 16 |
Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
|
Rossel, C.
|
|
2014
|
98 |
C |
p. 88-92
5 p.
|
artikel
|
| 17 |
Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node
|
Morvan, S.
|
|
2014
|
98 |
C |
p. 50-54
5 p.
|
artikel
|
| 18 |
Technological development of high-k dielectric FinFETs for liquid environment
|
Rigante, S.
|
|
2014
|
98 |
C |
p. 81-87
7 p.
|
artikel
|
| 19 |
Three-state resistive switching in HfO2-based RRAM
|
Lian, Xiaojuan
|
|
2014
|
98 |
C |
p. 38-44
7 p.
|
artikel
|
Tijdschrift beschrijving