| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
|
Gelczuk, Ł.
|
|
2014
|
94 |
C |
p. 56-60
5 p.
|
artikel
|
| 2 |
Chromatic-stability white organic light emitting diodes based on phosphorescence doped electron transport layer
|
Zhou, Pengchao
|
|
2014
|
94 |
C |
p. 6-10
5 p.
|
artikel
|
| 3 |
Compact core model for Symmetric Double-Gate Junctionless Transistors
|
Cerdeira, A.
|
|
2014
|
94 |
C |
p. 91-97
7 p.
|
artikel
|
| 4 |
Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations
|
Marek, Juraj
|
|
2014
|
94 |
C |
p. 44-50
7 p.
|
artikel
|
| 5 |
Complex-coupled edge-emitting photonic crystal distributed feedback quantum cascade lasers at λ ∼7.6μm
|
Zhang, Jinchuan
|
|
2014
|
94 |
C |
p. 20-22
3 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2014
|
94 |
C |
p. IFC-
1 p.
|
artikel
|
| 7 |
Enhanced endurance reliability and low current operation for AlO x /HfO x based unipolar RRAM with Ni electrode
|
Chen, Yu-Sheng
|
|
2014
|
94 |
C |
p. 1-5
5 p.
|
artikel
|
| 8 |
Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications
|
Moon, Pyung
|
|
2014
|
94 |
C |
p. 51-55
5 p.
|
artikel
|
| 9 |
Flexible thin-film transistors on planarized parylene substrate with recessed individual backgates
|
Farkas, Balázs
|
|
2014
|
94 |
C |
p. 11-14
4 p.
|
artikel
|
| 10 |
Impedance spectroscopy analysis of the switching mechanism of reduced graphene oxide resistive switching memory
|
Ho, Nhu Thuy
|
|
2014
|
94 |
C |
p. 61-65
5 p.
|
artikel
|
| 11 |
Improvement of the multi-level cell performance by a soft program method in flash memory devices
|
Park, Jong Kyung
|
|
2014
|
94 |
C |
p. 86-90
5 p.
|
artikel
|
| 12 |
Interface phonon modes of dual-gate MOSFET system
|
Zhang, Nanzhu
|
|
2014
|
94 |
C |
p. 72-81
10 p.
|
artikel
|
| 13 |
Investigating and modeling impact ionization current in MOSFETs
|
Chau, Quan
|
|
2014
|
94 |
C |
p. 66-71
6 p.
|
artikel
|
| 14 |
ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation
|
Vobecký, J.
|
|
2014
|
94 |
C |
p. 32-38
7 p.
|
artikel
|
| 15 |
Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs
|
Sun, Wookyung
|
|
2014
|
94 |
C |
p. 23-27
5 p.
|
artikel
|
| 16 |
P–N junction and metal contact reliability of SiC diode in high temperature (873K) environment
|
Chand, R.
|
|
2014
|
94 |
C |
p. 82-85
4 p.
|
artikel
|
| 17 |
Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
|
Zhong, L.
|
|
2014
|
94 |
C |
p. 98-102
5 p.
|
artikel
|
| 18 |
Switching phenomenon in TlGaSe2 layered semiconductor
|
Seyidov, МirHasanYu.
|
|
2014
|
94 |
C |
p. 39-43
5 p.
|
artikel
|
| 19 |
Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air
|
Borysiewicz, Michał A.
|
|
2014
|
94 |
C |
p. 15-19
5 p.
|
artikel
|
| 20 |
Tunable low-pass MEMS filter using defected ground structures (DGS)
|
Guo, X.L.
|
|
2014
|
94 |
C |
p. 28-31
4 p.
|
artikel
|
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