| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits
|
Esqueda, Ivan S.
|
|
2014
|
91 |
C |
p. 81-86
6 p.
|
artikel
|
| 2 |
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
|
Nicoletti, Talitha
|
|
2014
|
91 |
C |
p. 53-58
6 p.
|
artikel
|
| 3 |
Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications
|
Shah, P.B.
|
|
2014
|
91 |
C |
p. 87-90
4 p.
|
artikel
|
| 4 |
Automatic TCAD model calibration for multi-cellular Trench-IGBTs
|
Maresca, Luca
|
|
2014
|
91 |
C |
p. 36-43
8 p.
|
artikel
|
| 5 |
Avalanche breakdown in SOI MESFETs
|
Lepkowski, William
|
|
2014
|
91 |
C |
p. 78-80
3 p.
|
artikel
|
| 6 |
Backgating effect in III–V MESFET’s: A physical model
|
Manifacier, J.C.
|
|
2014
|
91 |
C |
p. 13-18
6 p.
|
artikel
|
| 7 |
Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance
|
Karsenty, A.
|
|
2014
|
91 |
C |
p. 28-35
8 p.
|
artikel
|
| 8 |
Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design
|
DasGupta, Sandeepan
|
|
2014
|
91 |
C |
p. 59-66
8 p.
|
artikel
|
| 9 |
Corner induced non-uniform electric field effect on the electrical reliability of metal–oxide–semiconductor devices with non-planar substrates
|
Tseng, Po-Hao
|
|
2014
|
91 |
C |
p. 100-105
6 p.
|
artikel
|
| 10 |
Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
|
Schleeh, J.
|
|
2014
|
91 |
C |
p. 74-77
4 p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
2014
|
91 |
C |
p. IFC-
1 p.
|
artikel
|
| 12 |
Effect of annealing on the electrical properties of insulating aluminum nitride in MIM and MIS structures
|
Ortiz, Carlos R.
|
|
2014
|
91 |
C |
p. 106-111
6 p.
|
artikel
|
| 13 |
Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics
|
Kim, Hyojune
|
|
2014
|
91 |
C |
p. 127-129
3 p.
|
artikel
|
| 14 |
Effect of load current density during the production of Cu2O/Cu solar cells by anodic oxidation on film quality and output power
|
Hasuda, K.
|
|
2014
|
91 |
C |
p. 130-136
7 p.
|
artikel
|
| 15 |
Enhanced seebeck coefficient for a compressive n-type polysilicon film
|
Kang, Ting-Kuo
|
|
2014
|
91 |
C |
p. 24-27
4 p.
|
artikel
|
| 16 |
Evaluation of voltage vs. pulse width modulation and feedback during set/reset verify-programming to achieve 10 million cycles for 50nm HfO2 ReRAM
|
Higuchi, Kazuhide
|
|
2014
|
91 |
C |
p. 67-73
7 p.
|
artikel
|
| 17 |
Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs
|
Ota, K.
|
|
2014
|
91 |
C |
p. 123-126
4 p.
|
artikel
|
| 18 |
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
|
Zhou, Qi
|
|
2014
|
91 |
C |
p. 19-23
5 p.
|
artikel
|
| 19 |
MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools
|
Lacord, Joris
|
|
2014
|
91 |
C |
p. 137-146
10 p.
|
artikel
|
| 20 |
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
|
Mohanbabu, A.
|
|
2014
|
91 |
C |
p. 44-52
9 p.
|
artikel
|
| 21 |
Modeling the voltage nonlinearity of high-k MIM capacitors
|
Kannadassan, D.
|
|
2014
|
91 |
C |
p. 112-117
6 p.
|
artikel
|
| 22 |
Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
|
Sato-Iwanaga, Junko
|
|
2014
|
91 |
C |
p. 1-8
8 p.
|
artikel
|
| 23 |
Performance improvement of oxide thin-film transistors with a two-step-annealing method
|
Li, Min
|
|
2014
|
91 |
C |
p. 9-12
4 p.
|
artikel
|
| 24 |
Proximity gettering of slow diffuser contaminants in CMOS image sensors
|
Russo, F.
|
|
2014
|
91 |
C |
p. 91-99
9 p.
|
artikel
|
| 25 |
Quantum simulation study of single halo dual-material gate CNTFETs
|
Wang, Wei
|
|
2014
|
91 |
C |
p. 147-151
5 p.
|
artikel
|
| 26 |
Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices
|
Xu, Yue
|
|
2014
|
91 |
C |
p. 118-122
5 p.
|
artikel
|
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