| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge-based capacitance model for AlGaAs/GaAs HEMTs
|
Khandelwal, Sourabh
|
|
2013
|
82 |
C |
p. 38-40
3 p.
|
artikel
|
| 2 |
Achieving low sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate stack
|
Cheng, C.H.
|
|
2013
|
82 |
C |
p. 111-114
4 p.
|
artikel
|
| 3 |
AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate
|
Wu, Tsu-Yi
|
|
2013
|
82 |
C |
p. 1-5
5 p.
|
artikel
|
| 4 |
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
|
Jazaeri, F.
|
|
2013
|
82 |
C |
p. 103-110
8 p.
|
artikel
|
| 5 |
A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor
|
Djezzar, Boualem
|
|
2013
|
82 |
C |
p. 46-53
8 p.
|
artikel
|
| 6 |
A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure
|
Jin, Xiaoshi
|
|
2013
|
82 |
C |
p. 77-81
5 p.
|
artikel
|
| 7 |
Characteristics of nanostructured CdO/Si heterojunction photodetector synthesized by CBD
|
Ismail, Raid A.
|
|
2013
|
82 |
C |
p. 115-121
7 p.
|
artikel
|
| 8 |
Characterization of residual implant damage by generation time technique
|
Jee, Yun-Jung
|
|
2013
|
82 |
C |
p. 16-20
5 p.
|
artikel
|
| 9 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
|
Schwarz, Mike
|
|
2013
|
82 |
C |
p. 86-98
13 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2013
|
82 |
C |
p. IFC-
1 p.
|
artikel
|
| 11 |
Functional nanocrystal-based memories with extraction of nanocrystals properties by charge pumping technique
|
Diaz, R.
|
|
2013
|
82 |
C |
p. 11-15
5 p.
|
artikel
|
| 12 |
Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device
|
Park, Youn Ho
|
|
2013
|
82 |
C |
p. 34-37
4 p.
|
artikel
|
| 13 |
High sensitivity field emission based sensors using carbon nanotubes on silicon tip for high frequency vibration sensing
|
Abdi, Yaser
|
|
2013
|
82 |
C |
p. 6-10
5 p.
|
artikel
|
| 14 |
Improved performance of photovoltaic devices based on poly(3-hexylthiophene) nanofibers and CdSe quantum dots through ligand exchange and annealing treatment
|
Qiao, Fen
|
|
2013
|
82 |
C |
p. 25-28
4 p.
|
artikel
|
| 15 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric
|
Min, K.S.
|
|
2013
|
82 |
C |
p. 82-85
4 p.
|
artikel
|
| 16 |
La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
|
Zadeh, D.H.
|
|
2013
|
82 |
C |
p. 29-33
5 p.
|
artikel
|
| 17 |
Optical and electrical properties of hydrothermally grown Al-doped ZnO nanorods on graphene/Ni/Si substrate
|
Wang, L.L.
|
|
2013
|
82 |
C |
p. 99-102
4 p.
|
artikel
|
| 18 |
Origin of the low-frequency noise in n-channel FinFETs
|
Theodorou, C.G.
|
|
2013
|
82 |
C |
p. 21-24
4 p.
|
artikel
|
| 19 |
Rapid one-step room-temperature solid-state synthesis and formation mechanism of ZnO nanorods as H2S-sensing materials
|
Cao, Yali
|
|
2013
|
82 |
C |
p. 67-71
5 p.
|
artikel
|
| 20 |
Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN
|
Lei, Yong
|
|
2013
|
82 |
C |
p. 63-66
4 p.
|
artikel
|
| 21 |
Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories
|
Aritome, Seiichi
|
|
2013
|
82 |
C |
p. 54-62
9 p.
|
artikel
|
| 22 |
Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs
|
Dubecký, F.
|
|
2013
|
82 |
C |
p. 72-76
5 p.
|
artikel
|
| 23 |
W-band differential power amplifier design in 45nm low power CMOS
|
Deferm, Noël
|
|
2013
|
82 |
C |
p. 41-45
5 p.
|
artikel
|
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