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La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode |
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Title: |
La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode |
Author: |
Zadeh, D.H. Oomine, H. Suzuki, Y. Kakushima, K. Ahmet, P. Nohira, H. Kataoka, Y. Nishiyama, A. Sugii, N. Tsutsui, K. Natori, K. Hattori, T. Iwai, H. |
Appeared in: |
Solid-state electronics |
Paging: |
Volume 82 (2013) nr. C pages 5 p. |
Year: |
2013 |
Contents: |
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Publisher: |
Elsevier Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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