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                                       Details for article 16 of 23 found articles
 
 
  La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
 
 
Title: La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
Author: Zadeh, D.H.
Oomine, H.
Suzuki, Y.
Kakushima, K.
Ahmet, P.
Nohira, H.
Kataoka, Y.
Nishiyama, A.
Sugii, N.
Tsutsui, K.
Natori, K.
Hattori, T.
Iwai, H.
Appeared in: Solid-state electronics
Paging: Volume 82 (2013) nr. C pages 5 p.
Year: 2013
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 16 of 23 found articles
 
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