nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Ammonia gas sensing behavior of graphene surface decorated with gold nanoparticles
|
Gautam, Madhav |
|
2012 |
78 |
C |
p. 159-165 7 p. |
artikel |
2 |
(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
|
Young, C.D. |
|
2012 |
78 |
C |
p. 2-10 9 p. |
artikel |
3 |
A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics
|
Zhang, Xiaochen |
|
2012 |
78 |
C |
p. 131-135 5 p. |
artikel |
4 |
Characteristics of THz carrier dynamics in GaN thin film and ZnO nanowires by temperature dependent terahertz time domain spectroscopy measurement
|
Balci, Soner |
|
2012 |
78 |
C |
p. 68-74 7 p. |
artikel |
5 |
Characterization of size-controlled ZnO nanorods produced by electrochemical deposition technique
|
Orhan, N. |
|
2012 |
78 |
C |
p. 147-150 4 p. |
artikel |
6 |
Charge pumping and DCIV currents in SOI FinFETs
|
Zhang, E.X. |
|
2012 |
78 |
C |
p. 75-79 5 p. |
artikel |
7 |
CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs
|
Ivana, |
|
2012 |
78 |
C |
p. 62-67 6 p. |
artikel |
8 |
Data retention under gate stress on a NVM array
|
Djenadi, R. |
|
2012 |
78 |
C |
p. 80-86 7 p. |
artikel |
9 |
DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN
|
Shah, P.B. |
|
2012 |
78 |
C |
p. 121-126 6 p. |
artikel |
10 |
Editorial Board
|
|
|
2012 |
78 |
C |
p. IFC- 1 p. |
artikel |
11 |
Effects of oblique wave propagation on the nonlinear plasma resonance in the two-dimensional channel of the Dyakonov–Shur detector
|
Rupper, Greg |
|
2012 |
78 |
C |
p. 102-108 7 p. |
artikel |
12 |
Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack
|
Li, Chen-Chien |
|
2012 |
78 |
C |
p. 17-21 5 p. |
artikel |
13 |
Failure modes and effects criticality analysis and accelerated life testing of LEDs for medical applications
|
Sawant, M. |
|
2012 |
78 |
C |
p. 39-45 7 p. |
artikel |
14 |
Finite element modeling of a nanowire-based oscillator achieved through solid–liquid phase switching for GHz operation
|
Cywar, Adam |
|
2012 |
78 |
C |
p. 97-101 5 p. |
artikel |
15 |
Foreword
|
Akturk, Akin |
|
2012 |
78 |
C |
p. 1- 1 p. |
artikel |
16 |
Hot wire chemical vapor deposited boron carbide thin film/crystalline silicon diode for neutron detection application
|
Chaudhari, Pradip |
|
2012 |
78 |
C |
p. 156-158 3 p. |
artikel |
17 |
Improved programming/erasing speed of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack
|
Chen, Chun-Yuan |
|
2012 |
78 |
C |
p. 22-27 6 p. |
artikel |
18 |
Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer
|
Greene, Andrew |
|
2012 |
78 |
C |
p. 56-61 6 p. |
artikel |
19 |
Influence of the plasma oxidation power on the switching properties of Al/Cu x O/Cu memristive devices
|
McDonald, N.R. |
|
2012 |
78 |
C |
p. 46-50 5 p. |
artikel |
20 |
Low-frequency noise in high-k LaLuO3/TiN MOSFETs
|
Olyaei, Maryam |
|
2012 |
78 |
C |
p. 51-55 5 p. |
artikel |
21 |
Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates
|
Grandusky, James R. |
|
2012 |
78 |
C |
p. 127-130 4 p. |
artikel |
22 |
Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test
|
Aziza, H. |
|
2012 |
78 |
C |
p. 151-155 5 p. |
artikel |
23 |
On-current limitation of high-k gate insulator MOSFETs
|
Shih, Chun-Hsing |
|
2012 |
78 |
C |
p. 87-91 5 p. |
artikel |
24 |
One-flux theory of saturated drain current in nanoscale transistors
|
Tang, Ting-wei |
|
2012 |
78 |
C |
p. 115-120 6 p. |
artikel |
25 |
Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2
|
Murad, S.N.A. |
|
2012 |
78 |
C |
p. 136-140 5 p. |
artikel |
26 |
Polycrystalline silicon thin-film transistor with nickel–titanium oxide by sol–gel spin-coating and nitrogen implantation
|
Wu, Shih-Chieh |
|
2012 |
78 |
C |
p. 11-16 6 p. |
artikel |
27 |
Self-aligned multi-channel silicon nanowire field-effect transistors
|
Zhu, Hao |
|
2012 |
78 |
C |
p. 92-96 5 p. |
artikel |
28 |
Temperature impact on the tunnel fet off-state current components
|
Agopian, Paula Ghedini Der |
|
2012 |
78 |
C |
p. 141-146 6 p. |
artikel |
29 |
Ultrafast control of electron spin in a quantum dot using geometric phase
|
Malinovsky, V.S. |
|
2012 |
78 |
C |
p. 28-33 6 p. |
artikel |
30 |
Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
|
Watanabe, Takayuki |
|
2012 |
78 |
C |
p. 109-114 6 p. |
artikel |
31 |
Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory
|
Park, Se Hwan |
|
2012 |
78 |
C |
p. 34-38 5 p. |
artikel |