| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear region
|
Yang, Hongguan
|
|
2012
|
76 |
C |
p. 5-7
3 p.
|
artikel
|
| 2 |
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
|
Wan, J.
|
|
2012
|
76 |
C |
p. 109-111
3 p.
|
artikel
|
| 3 |
A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs
|
García-Sánchez, Francisco J.
|
|
2012
|
76 |
C |
p. 112-115
4 p.
|
artikel
|
| 4 |
A highly sensitive methane sensor with nickel alloy microheater on micromachined Si substrate
|
Roy, S.
|
|
2012
|
76 |
C |
p. 84-90
7 p.
|
artikel
|
| 5 |
A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices
|
Khandelwal, Sourabh
|
|
2012
|
76 |
C |
p. 60-66
7 p.
|
artikel
|
| 6 |
A single electron bipolar avalanche transistor implemented in 90nm CMOS
|
Webster, Eric A.G.
|
|
2012
|
76 |
C |
p. 116-118
3 p.
|
artikel
|
| 7 |
Characterization of self-heating in Si–Ge HBTs with pulse, DC and AC measurements
|
Sahoo, Amit Kumar
|
|
2012
|
76 |
C |
p. 13-18
6 p.
|
artikel
|
| 8 |
CIGS formation by high temperature selenization of metal precursors in H2Se atmosphere
|
Liang, Haifan
|
|
2012
|
76 |
C |
p. 95-100
6 p.
|
artikel
|
| 9 |
Deposition of nanocrystalline thin TiO2 films for MOS capacitors using Sol–Gel spin method with Pt and Al top electrodes
|
Rathee, Davinder
|
|
2012
|
76 |
C |
p. 71-76
6 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2012
|
76 |
C |
p. IFC-
1 p.
|
artikel
|
| 11 |
Effect of annealing temperature on resistance switching behavior of Mg0.2Zn0.8O thin films deposited on ITO glass
|
Gao, Shu-ming
|
|
2012
|
76 |
C |
p. 40-43
4 p.
|
artikel
|
| 12 |
Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers
|
Ho, Chiu-Sheng
|
|
2012
|
76 |
C |
p. 101-103
3 p.
|
artikel
|
| 13 |
Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
|
Birafane, A.
|
|
2012
|
76 |
C |
p. 77-83
7 p.
|
artikel
|
| 14 |
Enhanced performance of organic electroluminescent diodes by UV–ozone treatment of molybdenum trioxide
|
Deng, Zhenbo
|
|
2012
|
76 |
C |
p. 25-29
5 p.
|
artikel
|
| 15 |
Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack
|
Chaves, Ferney
|
|
2012
|
76 |
C |
p. 19-24
6 p.
|
artikel
|
| 16 |
Extending ballistic graphene FET lumped element models to diffusive devices
|
Vincenzi, G.
|
|
2012
|
76 |
C |
p. 8-12
5 p.
|
artikel
|
| 17 |
Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors
|
Liu, Qingmin
|
|
2012
|
76 |
C |
p. 1-4
4 p.
|
artikel
|
| 18 |
Hard breakdown mechanisms of compensated p-type and n-type single-crystalline silicon solar cells
|
Dubois, S.
|
|
2012
|
76 |
C |
p. 36-39
4 p.
|
artikel
|
| 19 |
Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs
|
Ioannidis, E.G.
|
|
2012
|
76 |
C |
p. 54-59
6 p.
|
artikel
|
| 20 |
Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe
|
Zhang, Gang
|
|
2012
|
76 |
C |
p. 67-70
4 p.
|
artikel
|
| 21 |
Performance improvement of low-temperature a-SiGe:H thin-film transistors
|
Dominguez, Miguel
|
|
2012
|
76 |
C |
p. 44-47
4 p.
|
artikel
|
| 22 |
Quantitative evaluation of gettering efficiencies in device process after p-well formation
|
Lee, Sung-Wook
|
|
2012
|
76 |
C |
p. 30-35
6 p.
|
artikel
|
| 23 |
Special correlation of photoluminescent peak of porous silicon with its resistivity
|
Verma, Daisy
|
|
2012
|
76 |
C |
p. 48-53
6 p.
|
artikel
|
| 24 |
Synthesis and ethanol sensing properties of SnO2 nanosheets via a simple hydrothermal route
|
Lou, Zheng
|
|
2012
|
76 |
C |
p. 91-94
4 p.
|
artikel
|
| 25 |
Zinc oxide thin film transistors with Schottky source barriers
|
Ma, Alex M.
|
|
2012
|
76 |
C |
p. 104-108
5 p.
|
artikel
|
Tijdschrift beschrijving