| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A physics-based, small-signal model for graphene field effect transistors
|
Champlain, James G.
|
|
2012
|
67 |
1 |
p. 53-62
10 p.
|
artikel
|
| 2 |
BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations
|
Venugopalan, S.
|
|
2012
|
67 |
1 |
p. 79-89
11 p.
|
artikel
|
| 3 |
Calculation and analysis of thermal impedance of microelectronic structures from analytical models
|
Vintrou, S.
|
|
2012
|
67 |
1 |
p. 45-52
8 p.
|
artikel
|
| 4 |
Dynamic switching characteristic dependence on sidewall angle for phase change memory
|
Long, X.M.
|
|
2012
|
67 |
1 |
p. 1-5
5 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2012
|
67 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Engineering the current–voltage characteristics of metal–insulator–metal diodes using double-insulator tunnel barriers
|
Grover, Sachit
|
|
2012
|
67 |
1 |
p. 94-99
6 p.
|
artikel
|
| 7 |
Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality
|
Park, Ki-Heung
|
|
2012
|
67 |
1 |
p. 17-22
6 p.
|
artikel
|
| 8 |
High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory
|
Ren, Jingjian
|
|
2012
|
67 |
1 |
p. 23-26
4 p.
|
artikel
|
| 9 |
High-frequency, 6.2Å pN heterojunction diodes
|
Champlain, James G.
|
|
2012
|
67 |
1 |
p. 105-108
4 p.
|
artikel
|
| 10 |
Influence of ionic Bismuth on intrinsic defects in ZnO varistors
|
Huan, Chen
|
|
2012
|
67 |
1 |
p. 27-29
3 p.
|
artikel
|
| 11 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
|
Čičo, K.
|
|
2012
|
67 |
1 |
p. 74-78
5 p.
|
artikel
|
| 12 |
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
|
Balaguer, M.
|
|
2012
|
67 |
1 |
p. 30-37
8 p.
|
artikel
|
| 13 |
Inverter circuits on glass substrates based on ZnO-nanoparticle thin-film transistors
|
Wolff, K.
|
|
2012
|
67 |
1 |
p. 11-16
6 p.
|
artikel
|
| 14 |
Lateral power-monitoring photodiode monolithically integrated into 1.3μm GaInAsP laser
|
Yang, Chyi-Da
|
|
2012
|
67 |
1 |
p. 63-69
7 p.
|
artikel
|
| 15 |
Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics
|
Hahn, H.
|
|
2012
|
67 |
1 |
p. 90-93
4 p.
|
artikel
|
| 16 |
Polarization retention and switching in ferroelectric nanocapacitors with defects on tensile substrates
|
Misirlioglu, I.B.
|
|
2012
|
67 |
1 |
p. 38-44
7 p.
|
artikel
|
| 17 |
Silicon based on-chip antenna using an LC resonator for near-field RF systems
|
Okabe, Kenji
|
|
2012
|
67 |
1 |
p. 100-104
5 p.
|
artikel
|
| 18 |
Stable field emission from planar-gate electron source with MWNTs by electrophoretic deposition
|
Zhang, Y.A.
|
|
2012
|
67 |
1 |
p. 6-10
5 p.
|
artikel
|
| 19 |
The effects of the surface morphology of poly(3,4-ethylenedioxythiophene) electrodes on the growth of pentacene, and the electrical performance of the bottom contact pentacene transistor
|
Kim, Hyunho
|
|
2012
|
67 |
1 |
p. 70-73
4 p.
|
artikel
|
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