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Journal description
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Details for article 11 of 19 found articles
| Title: |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation |
| Author: |
Čičo, K. Gregušová, D. Kuzmík, J. Jurkovič, M. Alexewicz, A. di Forte Poisson, M.-A. Pogany, D. Strasser, G. Delage, S. Fröhlich, K. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 67 (2012) nr. 1 pages 5 p. |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 19 found articles
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