| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analytical unified threshold voltage model of short-channel FinFETs and implementation
|
Fasarakis, N.
|
|
2011
|
64 |
1 |
p. 34-41
8 p.
|
article
|
| 2 |
An analytical compact model for Schottky-barrier double gate MOSFETs
|
Balaguer, M.
|
|
2011
|
64 |
1 |
p. 78-84
7 p.
|
article
|
| 3 |
A novel 3-TFT voltage driving method of compensating VTH shift for a-Si:H TFT and OLED degradation for AMOLED
|
Lin, Chih-Lung
|
|
2011
|
64 |
1 |
p. 10-13
4 p.
|
article
|
| 4 |
A THz-range planar NDR device utilizing ballistic electron acceleration in GaN
|
Aslan, Barbaros
|
|
2011
|
64 |
1 |
p. 57-62
6 p.
|
article
|
| 5 |
Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications
|
Li, Chong
|
|
2011
|
64 |
1 |
p. 67-72
6 p.
|
article
|
| 6 |
Detailed study about influence of oxygen on trap properties in SiO x N y by the thermally stimulated current and maximum entropy method
|
Yonamoto, Yoshiki
|
|
2011
|
64 |
1 |
p. 54-56
3 p.
|
article
|
| 7 |
Editorial Board
|
|
|
2011
|
64 |
1 |
p. IFC-
1 p.
|
article
|
| 8 |
Enhancement of electrical properties in pentacene-based thin-film transistors using a lithium fluoride modification layer
|
Chou, Dei-Wei
|
|
2011
|
64 |
1 |
p. 1-5
5 p.
|
article
|
| 9 |
Four-point probe characterization of 4H silicon carbide
|
Chandra, N.
|
|
2011
|
64 |
1 |
p. 73-77
5 p.
|
article
|
| 10 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
|
Moschetti, Giuseppe
|
|
2011
|
64 |
1 |
p. 47-53
7 p.
|
article
|
| 11 |
Investigation on the thermal behavior of microwave GaN HEMTs
|
Crupi, Giovanni
|
|
2011
|
64 |
1 |
p. 28-33
6 p.
|
article
|
| 12 |
Proposal of preliminary device model and scaling scheme of cross-current tetrode SOI MOSFET aiming at low-energy circuit applications
|
Omura, Yasuhisa
|
|
2011
|
64 |
1 |
p. 18-27
10 p.
|
article
|
| 13 |
Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
|
Lai, Ming-Hui
|
|
2011
|
64 |
1 |
p. 6-9
4 p.
|
article
|
| 14 |
Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application
|
Yun, Jang-Gn
|
|
2011
|
64 |
1 |
p. 42-46
5 p.
|
article
|
| 15 |
Trench superjunction VDMOS with charge imbalance cells
|
Sun, Weifeng
|
|
2011
|
64 |
1 |
p. 14-17
4 p.
|
article
|
| 16 |
14.2W/mm internally-matched AlGaN/GaN HEMT for X-band applications
|
Peng, M.Z.
|
|
2011
|
64 |
1 |
p. 63-66
4 p.
|
article
|
Journal description