| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Capacitor-less A-RAM SOI memory: Principles, scaling and expected performance
|
Rodriguez, Noel
|
|
2011
|
59 |
1 |
p. 44-49
6 p.
|
artikel
|
| 2 |
Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise
|
Valenza, M.
|
|
2011
|
59 |
1 |
p. 34-38
5 p.
|
artikel
|
| 3 |
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs
|
Van Den Daele, W.
|
|
2011
|
59 |
1 |
p. 25-33
9 p.
|
artikel
|
| 4 |
Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance
|
Park, Ki-Heung
|
|
2011
|
59 |
1 |
p. 39-43
5 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2011
|
59 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Foreword
|
Clerc, Raphaël
|
|
2011
|
59 |
1 |
p. 1-
1 p.
|
artikel
|
| 7 |
Fully depleted silicon on insulator MOSFETs on (110) surface for hybrid orientation technologies
|
Signamarcheix, T.
|
|
2011
|
59 |
1 |
p. 8-12
5 p.
|
artikel
|
| 8 |
Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
|
Kilchytska, V.
|
|
2011
|
59 |
1 |
p. 18-24
7 p.
|
artikel
|
| 9 |
High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs
|
Le Royer, C.
|
|
2011
|
59 |
1 |
p. 2-7
6 p.
|
artikel
|
| 10 |
Impact of SEG on uniaxially strained MuGFET performance
|
Agopian, Paula Ghedini Der
|
|
2011
|
59 |
1 |
p. 13-17
5 p.
|
artikel
|
| 11 |
Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current
|
Afzalian, Aryan
|
|
2011
|
59 |
1 |
p. 50-61
12 p.
|
artikel
|
| 12 |
Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
|
Ruiz, F.G.
|
|
2011
|
59 |
1 |
p. 62-67
6 p.
|
artikel
|
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