Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 3 of 12 found articles
 
 
  Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs
 
 
Title: Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs
Author: Van Den Daele, W.
Le Royer, C.
Augendre, E.
Mitard, J.
Ghibaudo, G.
Cristoloveanu, S.
Appeared in: Solid-state electronics
Paging: Volume 59 (2011) nr. 1 pages 9 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 12 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands