| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs
|
Tsormpatzoglou, A.
|
|
2011
|
57 |
1 |
p. 31-34
4 p.
|
artikel
|
| 2 |
A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET
|
Shen, Chen
|
|
2011
|
57 |
1 |
p. 23-30
8 p.
|
artikel
|
| 3 |
A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
|
Lime, F.
|
|
2011
|
57 |
1 |
p. 61-66
6 p.
|
artikel
|
| 4 |
Compact modeling of CMOS transistors under variable uniaxial stress
|
Wacker, Nicoleta
|
|
2011
|
57 |
1 |
p. 52-60
9 p.
|
artikel
|
| 5 |
Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor
|
Lee, Kuan-Wei
|
|
2011
|
57 |
1 |
p. 80-82
3 p.
|
artikel
|
| 6 |
Dependence of off-leakage current on channel film quality in poly-Si thin-film transistors and analysis using device simulation
|
Kimura, Mutsumi
|
|
2011
|
57 |
1 |
p. 87-89
3 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2011
|
57 |
1 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content
|
Sel, Kıvanç
|
|
2011
|
57 |
1 |
p. 1-8
8 p.
|
artikel
|
| 9 |
Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
|
Shao, Xianjie
|
|
2011
|
57 |
1 |
p. 9-13
5 p.
|
artikel
|
| 10 |
Efficient fluorescent white organic light-emitting devices based on a ultrathin 5,6,11,12-tetraphenylnaphthacene layer
|
Xue, Qin
|
|
2011
|
57 |
1 |
p. 35-38
4 p.
|
artikel
|
| 11 |
Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET
|
Ortiz-Conde, Adelmo
|
|
2011
|
57 |
1 |
p. 43-51
9 p.
|
artikel
|
| 12 |
In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation
|
Grandchamp, B.
|
|
2011
|
57 |
1 |
p. 67-72
6 p.
|
artikel
|
| 13 |
Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
|
Xie, Feng
|
|
2011
|
57 |
1 |
p. 39-42
4 p.
|
artikel
|
| 14 |
Microwave absorption properties of gold nanoparticle doped polymers
|
Jiang, C.
|
|
2011
|
57 |
1 |
p. 19-22
4 p.
|
artikel
|
| 15 |
Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces
|
Hamaide, G.
|
|
2011
|
57 |
1 |
p. 83-86
4 p.
|
artikel
|
| 16 |
n+-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal
|
Wang, M.C.
|
|
2011
|
57 |
1 |
p. 73-75
3 p.
|
artikel
|
| 17 |
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
|
Zhu, Xingguang
|
|
2011
|
57 |
1 |
p. 76-79
4 p.
|
artikel
|
| 18 |
Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance
|
Manoi, Athikom
|
|
2011
|
57 |
1 |
p. 14-18
5 p.
|
artikel
|
| 19 |
Tuning the spectrometric properties of white light by surface plasmon effect using Ag nanoparticles in a colour converting light-emitting diode
|
Chandramohan, S.
|
|
2011
|
57 |
1 |
p. 90-92
3 p.
|
artikel
|
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